研究業績

査読付き学術論文 (Peer-Reviewed Papers)

  1.  Satoshi Kokado and Naoshi Suzuki
    Mol. Cryst. Liq. Cryst. 306(1997) 487-493.Magnetic Properties of Organic AF-F Alternating Chains
  2. Satoshi Kokado and Naoshi Suzuki
    Phys. Soc. Jpn. 66 (1997) 3605-3610.
    Pair Dynamical Correlated-Effective-Field Approximation
  3. Satoshi Kokado and Naoshi Suzuki
    Magn. Magn. Mater. 177-181 (1998) 677-678.
    Magnetic Properties of S=1/2 AF-F Alternating Chains  — Effect of Interchain Coupling
  4. Satoshi Kokado, Hiroyuki Nojiri, Noboru Miura and Naoshi Suzuki
    Physica B 246-247 (1998) 238-241.
    Exchange Splitting of EPR Spectra in CuGeO3 under Ultra-High Magnetic Fields — Theoretical Analysis
  5. Satoshi Kokado and Naoshi Suzuki
    Proc. 4th Int. Symp. on Advanced Physical Fields [APF-4] (1999) 243-246.
    Theoretical Study on EPR and ESR Spectra in CuGeO3
  6. Satoshi Kokado and Naoshi Suzuki
    Magn. Magn. Mater. 196-197 (1999) 566-568.
    Staggered Susceptibility of S=1/2 Exchange-Alternating Chains Studied by Exact Diagonalization Method
  7. Satoshi Kokado and Naoshi Suzuki
    Mol. Cryst. Liq. Cryst. 335 (1999) 153-162.
    Magnetic Properties of Pseudo-1D S=1/2 AF-F Alternating Chains under Magnetic Fields
  8. Satoshi Kokado and Naoshi Suzuki
    Phys. Soc. Jpn. 69 (1999) 3091-3094.
    Dynamical Structure Factor of S=1/2 AF-F Alternating Chains
  9. Naoshi Suzuki, Yuko Fujimoto and Satoshi Kokado
    Physica B 284-288 Part 2 (2000) 1567-1568.
    Theory of Magnetic Excitations of Spin-Pair System KCuCl3
  10. Satoshi Kokado
    Jpn. J. Appl. Phys. 40 Pt.1 No.5A (2001) 3183-3187.
    Conductivity at Each Layer of a Spin Valve System
  11. S. Kokado, M. Ichimura, T. Onogi, A. Sakuma, R. Arai, J. Hayakawa, K. Ito, and Y. Suzuki
    Appl. Phys. Lett. 79 (2001) 3986-3988.
    Insulator Thickness Dependence of Tunnel Magnetoresistance Effect in a Model of Co/Al-oxide/Co Junctions
  12. M. Sugiyama, H. Asano, M. Matsui, J. Hayakawa, S. Kokado, K. Itou, A. Sakuma, M. Ichimura
    Materials Research Society Symposium Proceedings 690 (2001) 29-34.
    Inverse TMR effect in Co0.9Fe0.1/SrTiO3/La0.7Sr0.3MnO3 tunnel junctions
  13. J. Hayakawa, K. Ito, S. Kokado, M. Ichimura, A. Sakuma, M. Sugiyama, H. Asano, and M. Matsui
    Appl. Phys. 91 (2002) 8792-8794.
    The Origin of Bias Voltage Dependence in CoFe/SrTiO3 /La0.7Sr0.3MnO3 Magnetic Junctions
  14. J. Hayakawa, S. Kokado, K. Ito, M. Sugiyama, H. Asano, M. Matsui, A. Sakuma, and M. Ichimura
    Jpn. J. Appl. Phys. 41 (2002) 1340-1342.
    Bias Voltage Dependence on Tunnel Magnetoresistance Effect in Spin-Valve Type MnIr /NiFe/Co90Fe10/SrTiO3/La0.7Sr0.3MnO3 Tunnel Junctions
  15. M. Ichimura, S. Kokado, T. Onogi, J. Hayakawa, and K. Ito
    Proc. 4th Int. Symp. on Quantum Mechanics (2002) 182-185.
    Magnetic Structures and Transport Properties in Ferromagnetic Tunneling Junction
  16. Satoshi Kokado and Kikuo Harigaya
    Synth. Metals 135-136 (2003) 745-746.
    Tunnel Magnetoresistance Effect in Co/BN Nanotubes/Co Junctions
  17. Satoshi Kokado and Kikuo Harigaya
    Phys.: Condens. Matter 15 (2003) 8797-8804.
    A Theoretical Investigation of Ferromagnetic Tunnel Junctions with 4-Valued Conductances
  18. Satoshi Kokado and Kikuo Harigaya
    Physica E  22 (2004) 670-674.
    Theoretical Investigation on Spin-Polarized Junctions with 4-Valued Conductances: Application to Carbon Nanotube Encapsulating Magnetic Atoms
  19. Satoshi Kokado and Kikuo Harigaya
    Phys. Rev. B 69 (2004) 132402-132405.
    Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes
  20. Satoshi Kokado and Kikuo Harigaya
    Proceedings of 3rd International Conference “Computational Modeling and Simulation of Materials, Modeling and Simulating Materials Nanoworld”, (2004) Part C, 151-158.
    Theoretical Study on Spin Dependent Transport in Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet Junctions
  21. Satoshi Kokado and Kikuo Harigaya
    Phys.: Condens. Matter 16 (2004) 5605-5614.
    A Theoretical Study on Spin-Dependent Transport of “Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet” Junctions with 4-Valued Conductances
  22. Satoshi Kokado and Kikuo Harigaya
    Synth. Metals 152 (2005) 465-468.
    Spin Dependent Transport of “Nonmagnetic Metal/Zigzag Nanotube Encapsulating Magnetic Atoms/Nonmagnetic Metal” Junctions
  23. Tomoki Suzuki, Kazumasa Ueda, Ryusuke Kita, Satoshi Kokado, Kikuo Harigaya
    Polyhedron 24 (2005) 2491-2496.
    Synthesis, Crystal Structure and Magnetic Property of Bis(tetra-n-butylammonium) Bis(4,5-dicyanobenzene-1,2-dithiolato) Oxovanadium Complex
  24. Kazumasa Ueda, Go Tanaka, Tomoki Suzuki, Ryusuke Kita, Satoshi Kokado
    Polyhedron 24 (2005) 2533-2537.
    Physical Properties of Thin Filmed Dithiolene Vanadium Complexes
  25. Satoshi Kokado, Nobuhisa Fujima, Kikuo Harigaya, Hisashi Shimizu, and Akimasa Sakuma
    phys. stat. solidi (c) 3 (2006) 3303-3306.
    Spin Polarized Transport of Iron Nitride Fe4N: Analysis Using a Combination of First Principles Calculation and Model Calculation
  26. Satoshi Kokado, Nobuhisa Fujima, Kikuo Harigaya, Hisashi Shimizu, and Akimasa Sakuma
    Phys. Rev. B 73 (2006) 172410.
    Theoretical analysis of highly spin-polarized transport in the iron nitride Fe4N
  27. Satoshi Kokado, Kazumasa Ueda, Kikuo Harigaya, and Akimasa Sakuma
    phys. stat. solidi (a) 204 (2007) 1937-1943.
    Localized quantum spin reversal by spin injection in a spin quantum dot: A model calculation
  28. Satoshi Kokado, Kazumasa Ueda, Kikuo Harigaya, and Akimasa Sakuma
    Phys. Rev. B 76 (2007) 054451-1 – 054451-11.   cond-mat/0708.1504
    Theoretical study of a localized quantum spin reversal by the sequential injection of spins in a spin quantum dot
    (Keywords: atomic memory, quantum spin memory, magnetic switch, current-induced quantum spin switching)
  29. Masakiyo Tsunoda, Yosuke Komasaki, Satoshi Kokado, Shinji Isogami, Che-Chin Chen, and Migaku Takahashi
    Appl. Phys. Express 2 (2009) 083001-1 – 083001-3.
    Negative Anisotropic Magnetoresistance in Fe4N Film
  30. Satoshi Kokado, Kikuo Harigaya, and Akimasa Sakuma
    phys. stat. solidi (c) 6 No. 10 (2009) 2113 – 2118.
    Switching of a single atomic spin induced by spin injection: Effect of spin relaxation
  31. Satoshi Kokado, Kikuo Harigaya, and Akimasa Sakuma
    Proc. of the 9th Int. Symp. on Foundations of Quantum Mechanics in the Light of New Technology – ISQM-TOKYO’08 (2009) 142 – 145.
    Switching of a single atomic spin induced by spin injection: A model calculation
  32. Satoshi Kokado, Kikuo Harigaya, and Akimasa Sakuma
    phys. stat. solidi (c) 7 No. 11 – 12 (2010) 2612 – 2615.
    Anisotropy energy, spin-atomic vibration interaction, and spin-flip Hamiltonian of a single atomic spin system: application to iron ion
  33. Satoshi Kokado, Kikuo Harigaya, and Akimasa Sakuma
    Spin-atomic vibration interaction and spin-flip Hamiltonian of a single atomic spin in a crystal field(Keywords: single spin, spin-orbit interaction, spin-phonon interaction, surface adsorbate, perturbation theory)Phys. Soc. Jpn. 79 (2010) 114721-1 – 114721-24. arXiv:1009.3634
  34. Masakiyo Tsunoda, Hirokazu Takahashi, Satoshi Kokado, Yosuke Komasaki, Akimasa Sakuma, and Migaku Takahashi
    Appl. Phys. Express 3 (2010) 113003-1 – 113003-3.Anomalous Anisotropic Magnetoresistance in Pseudo Single Crystal g’-Fe4N Films
  35. Satoshi Kokado, Masakiyo Tsunoda, Kikuo Harigaya, and Akimasa Sakuma
    Phys. Soc. Jpn. 81 (2012) 024705-1 – 024705-17. arXiv:1111.4864 Open access (free to download PDF from JPSJ site)
    Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet: A Systematic Analysis
    (Keywords: spin-orbit interaction, s-d scattering, spin-polarized conduction electron, two-current model)
  36. Fujun Yang, Yuya Sakuraba, Satoshi Kokado, Yohei Kota, Akimasa Sakuma, and Koki Takanashi
    Phys. Rev. B 86 (2012) 020409-1 – 020409-4.
    Anisotropic magnetoresistance in Co2(Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity
  37. Satoshi Kokado and Masakiyo Tsunoda
    Advanced Materials Research 750-752 (2013) 978 – 982.   arXiv:1305.3517    Open access (free to download PDF from AMR site)
    Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio
  38. Satoshi Kokado and Masakiyo Tsunoda
    phys. stat. solidi (c) 11 (2014) 1026 – 1032.
    Anisotropic magnetoresistance effect of a strong ferromagnet: magnetization direction dependence in a model with crystal field
  39. Y. Sakuraba, S. Kokado, Y. Hirayama, T. Furubayashi, H. Sukegawa, S. Li, Y. K. Takahashi, and K. Hono
    Appl. Phys. Lett. 104 (2014) 172407-1 – 172407-5.
    Quantitative analysis of anisotropic magnetoresistance in Co2MnZ and Co2FeZ epitaxial thin films:
    a facile way to investigate spin-polarization in half-metallic Heusler compounds
  40. Kazuki Kabara, Masakiyo Tsunoda, and Satoshi Kokado
    Appl. Phys. Express 7 (2014) 063003-1 – 063003-4.
    Annealing Effects on Nitrogen Site Ordering and Anisotropic Magnetoresistance in Pseudo-Single-Crystal γ’-Fe4N Films
  41. Satoshi Kokado and Masakiyo Tsunoda
    Phys. Soc. Jpn. 84 (2015) 094710-1 – 094710-18. arXiv: 1507.05912 Open access (free to download PDF from JPSJ site)
    Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field
    (Keywords: crystal field, spin-orbit interaction, s-d scattering, two-current model, perturbation theory, exact diagonalization method)
  42. Kazuki Kabara, Masakiyo Tsunoda, and Satoshi Kokado
    AIP Advances 6 (2016) 055801-1 – 055801-5.
    Anomalous Hall effects in pseudo-single-crystalγ’-Fe4N thin films
  43. Kazuki Kabara, Masakiyo Tsunoda, and Satoshi Kokado
    AIP Advances 6 (2016) 055818-1 – 055818-5.
    Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ’-Fe4N thin films
  44. 角田匡清, 鹿原和樹, 古門聡士
    まぐね (Magnetics Jpn.) 11 (2016) 125 – 132.
    逆ペロブスカイト型遷移金属窒化物薄膜の電流磁気効果Galvanomagnetic Effects of Antiperovskite-Type Transition Metal Nitride Thin Films
  45. Satoshi Kokado, Yuya Sakuraba, and Masakiyo Tsunoda
    Jpn. J. Appl. Phys. 55 (2016) 108004-1 – 108004-3.
     arXiv: 1608.08888    Open access (free to download PDF from JJAP site)
    Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets
    (Keywords: spin polarization ratio, density of states, resistivity, spin-orbit interaction, perturbation theory, nearly half-metallic ferromagnets, Heusler alloys)
  46. Kazuki Kabara, Masakiyo Tsunoda, and Satoshi Kokado
    AIP Advances 7 (2017) 056416-1 – 056416-6.
    Magneto-transport properties of pseudo-single-crystal Mn4N thin films
  47. Diyang Zhao, Shuang Qiao, Yuxiang Luo, Aitian Chen, Pengfei Zhang, Ping Zheng, Zhong Sun, Minghua Guo,Fu-kuo Chiang, Jian Wu, Jian-Lin Luo, Jianqi Li, Satoshi Kokado, Yayu Wang, and Yonggang Zhao
    ACS Applied Materials & Interfaces 9 (2017) 10835 – 10846.
    Magnetoresistance behaviors of conducting filaments in resistive-switching NiO with different resistance states

 

米国特許 (United States Patent)

  1.  Satoshi Kokado (Hitachi, Ltd., Central Research Laboratory)
    United States Patent 6804090 (October 12, 2004)
    Ferromagnetic Tunnel Junction Element Exhibiting High Magnetoresistivity
    at Finite Voltage and Tunnel Magnetoresistive Head Provided Therewith, Magnetic Head Slider, and Magnetic Disk Drive

 

競争的研究資金 (Grant)

  1.  科学研究費補助金  基盤研究(C)  研究代表  [2016年度-2018年度]
    『自己発電型ナノマシンに向けたスピンを介した電力-動力間変換に関する理論的研究』
  2. 平成28年度静岡大学工学部長裁量経費(国際会議招待講演の旅費支援) 研究代表 [2016年度]『Theoretical Study on anisotropic magnetoresistance effects in ferromagnets』
  3. 科学研究費補助金  基盤研究(A)  研究分担  (研究代表:角田匡清准教授)  [2014年度-2016年度]『強誘電体障壁強磁性トンネル接合素子の開発と電界効果によるスピン輸送制御』
  4. 科学研究費補助金  基盤研究(C)  研究代表  [2013年度-2016年度(1年延長)]『磁性分子マシンに向けたスピンによる動力の生成と制御に関する理論的研究』
  5. 科学研究費補助金  基盤研究(C)  研究分担  (研究代表:植田一正教授)  [2013年度-2015年度]『ナノ構造体の配向制御を目指した多孔質有機結晶作製法の確立』
  6. 科学研究費補助金  基盤研究(B)  研究分担  (研究代表:角田匡清准教授)  [2011年度-2013年度]『負のスピン分極材料を用いたスピントロニクスデバイスの開発』
  7. 東北大学電気通信研究所  共同プロジェクト研究  研究分担  (研究代表:角田匡清准教授)  [2011年度]『負のスピン分極材料を用いたスピントロニクスデバイスの研究』
  8. 東北大学電気通信研究所  共同プロジェクト研究  研究分担  (研究代表:角田匡清准教授)  [2010年度]『負のスピン分極材料を用いたスピントロニクスデバイスの研究』
  9. 科学研究費補助金  若手研究(B)  研究代表  [2008年度-2011年度]『電子伝導素子に代わるスピン波束伝播型局在スピン素子の理論的研究』
  10. 科学研究費補助金  若手研究(B)  研究代表  [2006年度-2007年度]『電子スピン-核スピン結合を利用した多値原子メモリに関する理論的研究』
  11. 科学研究費補助金  基盤研究(C)  研究分担  (研究代表:植田一正准教授)  [2007年度-2010年度]『直交配向分子を用いた電子移動を伴わない新規情報伝達素子の合成と論理回路への展開』
  12. 科学研究費補助金  特定領域研究  研究分担  (研究代表:星野敏春教授)  [2004年度-2005年度]『第一原理計算に基づく金属ガラスの相互作用エネルギーの解析と構造模型の構築』
  13. 平成17年度静岡大学競争的配分経費(II)  研究分担  (研究代表:喜多隆介教授)  [2005年度]

 

掲載記事 (Article)

  1. 古門聡士 (産業技術総合研究所)
    日経ナノテクノロジー Inside eReport 2003 9-8 創刊前5号 (2003年9月8日)
    『産総研,CNTを使った多値磁性メモリの理論を発表』 日経BP社Tech-On!

 

受賞 (Award)

  1. 古門聡士 (静岡大学)
    2005年日本応用磁気学会優秀講演賞
    『窒化鉄Fe4Nのスピン偏極伝導の理論的解析』
  2. 古門聡士 (静岡大学)
    平成29年度科学研究費助成事業(科研費)審査委員表彰        New
    授与団体名:日本学術振興会,受賞率:255名/約5300名=0.048,伝達式の写真
    2017年9月29日

 

連絡先 (別刷り請求先):
古門 聡士 (KOKADO, Satoshi)
〒432-8561 浜松市中区城北3-5-1 静岡大学工学部共通講座物理 6-302室
E-mail: kokado.satoshi[at_mark]shizuoka.ac.jp

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 Since May 11, 2007