2009年発表論文 – 中野研究室

[1] Hisashi Matsumura, Yasuo Kanematsu, Takayoshi Shimura, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Masatomo Sumiya, Takayuki Nakano, and Shunro Fuke; “Lateral polarity control in GaN based on selective growth procedure using carbon mask layers”, Applied Physics Express, 2 (2009) 101001

[2] R. Ohba, J. Ohta, K. Shimomoto, T. Fujii, K. Okamoto, A. Aoyama, T. Nakano, A. Kobayashi, H. Fujioka, M. Oshima; “Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition”, Journal of Solid State Chemistry, 182 (2009) 2887–2889

[3] Takayuki Nakano, Kazuki Nishimoto, Masatomo Sumiya, Shunro Fuke; Growth and properties of ZnO films grown using PA-MOVPE with DMZn and N2O”, Journal of Automation, Mobile Robotics & Intelligent Systems, Vol. 3, No. 4 (2009) pp. 124-126

[4] Takayuki Nakano, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki; “Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, Vol. 48 (2009) 011101

[5] Koichiro Okamoto, Shigeru Inoue, Takayuki Nakano, Jitsuo Ohta, Hiroshi Fujioka; “Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers”, Journal of Crystal Growth, 311 (2009) pp1311–1315