2019
Y. Takahashi, M. Sinohara, M. Arita, A. T-Fukuchi, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa:
Characteristics of Si Single-Electron Transistor under Illumination
ECS Transactions, Vol. 92, No.4, (2019) pp.47-56.
2017
M. Hori, Y. Ono:
EDMR on recombination process in silicon MOSFETs at room temperature
Advances in intelligent system and computing, Vol. 519, January (2017), pp. 89-93.
Y. Ono, M. Hori, G. P. Lansbergen, A. Fujiwara:
Manipulation of single charges using dopant atoms in silicon – Interplay with intervalley phonon emission –
Advances in intelligent system and computing, Vol. 519, January (2017), pp.137-141.