2000-2009

2009
M.Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endoh, I. Ohdomari:
Performance enhancement of semiconductor devices by control of discrete dopant distribution
Nanotechnology Vol. 20 Issue: 36, August (2009) 365205_1-5.

T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Single-electron device with Si nanodot array and multiple input gates
IEEE Trans. Nanotechnology Vol. 8, No. 4, July (2009) 535- 541.

T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Full adder operation based on Si nanodot array device with multiple inputs and outputs
International Journal of Nanotechnology and Molecular Computation Vol. 1, No. 2, April-June (2009) 58 – 69.

M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Si nanodot array device with multiple gates
Material Science in Semiconductor Processing Vol. 11, No. 5-6 Sp.Iss.SI, October (2009) 175 – 178.

M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara:
Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors
Appl. Phys. Lett. Vol. 94, No. 22, April (2009) 223501_1-3.

K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki:
Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures
Appl. Phys. Lett. Vol. 94, No. 14, April (2009) 142104_1-3.

2008
T.Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori, I. Ohdomari:
A reliable method for the counting and control of single ions for single-dopant controlled devices
Nanotechnology Vol. 19, Issue: 34, July (2008) 345202_1-4.

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara:
Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
Appl. Phys. Lett., Vol. 93, No. 22, December (2008) 222103_1-3.

K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi:
Single-electron-resolution electrometer based on field-effect transistor
Jpn. J. Appl. Phys. Vol. 47, No. 11, November (2008) 8305-8310.

N. M. Zimmerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa, M. Furlan, M. W. Keller:
Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
J. Appl. Phys. Vol. 104, No.3, August (2008) 033710_1-12.

S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta:
First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si
Phys. Rev. B Vol. 78, No.4, July (2008) 045307_1-7.

Paper for invited talk
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi:
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Appl. Sur.Sci. Vol. 254, No.19, July (2008) 6252-6256.

S. Yabuuchi, Y. Ono, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta:
Ferromagnetism of manganese-silicide nanopariticles in Silicon
Jpn. J. Appl. Phys. Vol. 47, No. 6, June (2008) 4487 – 4450

H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama:
A gate-defined silicon quantum dot molecule
Appl. Phys. Lett. Vol. 92, No. 22, June (2008) 222104_1-3.

Paper for invited talk
Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, H. Inokawa:
Silicon single-charge transfer devices
J. Phys. Chem. Solids Vol. 69, No. 2-3, February/march (2008) 702 – 707.

H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama:
Pauli-spin-blockade transport through a silicon double quantum dot
Phys. Rev. B Vol. 77, No.7, February (2008) 073310_1-4.

K. Nishiguchi, Y. Ono, A. Fujiwara , H. Inokawa , Y. Takahashi:
Stochastic data processing circuit based on single electrons using nano field-effect transistors
Appl. Phys. Lett. Vol. 92, No. 6, February (2008) 062105_1-3.

A. Fujiwara, K. Nishiguchi, Y. Ono:
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductorfield-effect transistor
Appl. Phys. Lett. Vol. 92, No. 4, January (2008) 042102_1-3.

2007
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara:
dentification of single and coupled acceptors in silicon nano field-effect transistors
Appl. Phys. Lett. Vol. 91, No. 26, December (2007) 263513_1-3.

D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, M. Tabe:
Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires
Phys. Rev. B Vol. 76, No.7 August (2007) 075332_1-5.

K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, Y. Hirayama:
Anomalous resistance ridges along filling factor v = 4i
Phys. Rev. Lett. Vol. 99, No. 3, July (2007) 036803_1-4.

K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Infrared detection with silicon nano field-effect transistor
Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1-3.

K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Infrared detection with silicon nano field-effect transistor
Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1-3.

W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu:
Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
IEICE Trans. Electron. Vol. E-90C, No. 5, May (2007) 943 – 948.

K. Takashina, B. Gaillaed, Y. Ono, Y. Hirayama:
Low-temperature characteristics of ambipolar SiO2/Si/SiO2 hall-bar devices
Jpn. J. Appl. Phys. Vol. 46, No. 4B, April (2007) 2596 – 2598.

T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, K. Torimitsu:
Effect of UV/Ozone treatment on nanogap electrodes for molecular devices
Jpn. J. Appl. Phys. Vol. 46, No. 4A, April (2007) 1731 – 1733.

J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, H. Yamaguchi:
Impact of space-energy correlation on variable-range hopping in transistors
Phys. Rev. Lett. Vol. 98, No. 16, April (2007) 166601_1-4.

Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Appl. Phys. Lett. Vol. 90, No. 10, March (2007) 102106_1-3.

K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, Y. Kobayashi:
Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation
J. Appl. Phys. Vol. 101, No. 3, February (2007) 034317_1-4.

K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi:
Long retention of gain-cell dynamic random access memory with undoped memory node
IEEE Electron Device Letters Vol. 28, No.1, January (2007) 48- 50.

N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa:
Charge offset stability in tunable-barrier Si single-electron tunneling devices
Appl. Phys. Lett. Vol. 90, No. 3, January (2007) 033507_1-3.

2006
Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi:
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at    temperatures between 10 and 295 K
Phys. Rev. B Vol. 74, No. 23, December (2006) 235317_1-9.

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama:
Intersubband scattering in double-gate MOSFETs
IEEE Trans. Nanotechnology, Vol. 5, No. 5, September (2006) 430-435.

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama:
Valley polarization in Si(100) at zero magnetic field
Phys. Rev. Lett. Vol. 96, No. 23, June (2006) 236801_1-4.

K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi:
Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
Appl. Phys. Lett. Vol. 88, No. 18, May (2006) 183101_1-3.

N. Clement, H. Inokawa, Y. Ono:
Studies on MOSFET low-frequency noise for electrometer applications,
Jpn. J. Appl. Phys. Vol. 45, No. 4B, April (2006) 3606 – 3608.

2005
K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa:
Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires
Jpn. J. Appl. Phys. Vol. 44, No. 10, October (2005) 7717 – 7719.

A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, P. M. Ajayan:
Metal-semiconductor transition in single-wall carbon nanotubes induced by low energy electron irradiation
Nano. Lett. Vol. 5, No. 8, August (2005) 1585 – 1589.

Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, Y. Ono:
Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
Appl. Phys. Lett. Vol. 87, No. 12, September (2005) 12195_1-3.

Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, Y. Takahashi:
Charge-state control of phosphorus donors in a silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Jpn. J. Appl. Phys. Vol. 44, No. 4B, April (2005) 2588 – 2591.

Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa, and Y. Takahashi:
Review articleManipulation and detection of single electrons for future information processing
J. Appl. Phys. Vol. 97, No. 03, January (2005) 031101-1-031101-19.

2004
N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, Y. Takahashi:
Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices
J. Appl. Phys. Vol. 96, No. 9, November (2004) 5254 – 5266.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilfunctional Boolean logic using single-electron transistors
IEICE Trans. Electrons. Vol. E87-C, No. 11, November (2004) 1809-1817.

S.- J. Kim, Y. Ono, Y. Takahashi, J. B. Choi:
Real-time observation of single-electron movement through silicon single-electron transistor
Jpn. J. Appl. Phys. Vol. 43, No. 10, October (2004) 6863 – 6867.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilevel memory using an electrically formed single-electron box
Appl. Phys. Lett. Vol. 85, No. 7, August (2004) 1277 – 1279.

A. Fujiwara, N. M. Zimmerman, Y. Ono, Y. Takahashi:
Current quantization due to single-electron transfer in Si-wire charge coupled devices
Appl. Phys. Lett. Vol. 84, No. 8, Feburary (2004) 1323 – 1325.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilevel memory using single-electron turnstile
Electronics Letters Vol. 44, No. 4, February (2004) 229- 230

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Automatic control of oscillation phase of a single-electron transistor
Electron Devices Letters Vol. 25, No. 1, January (2004) 31-33.

2003
H. Namatsu, Y. Watanabe, K. Yamazaki,T. Yamaguchi, M. Nagase, Y. Ono, A.Fujiwara, S. Horiguchi:
Influence of oxidation temperature on Sisingle-electron transistor characteristics
J. Vac. Sci. Technol.Vol. B21, No. 6, November/December(2003) 2869-2873.

Y. Ono, N. M. Zimmerman, K, Yamazaki, Y. Takahashi:
Turnstile operation using a silicon dual-gate single-electron transistor
Jpn. J. Appl. Phys. Vol. 42, No. 10A, October (2003) L1109 – L1111.

Y. Takahashi, Y. Ono, A. Fujiwara, H. Inokawa:
Invited paper:Development of silicon single-electron devices
Physica E. Vol. 19, No. 1-2, July (2003) 95-101.

Y. Ono and Y. Takahashi:
Electron pump by a combined single-electron/field-effect transistor structure
Appl. Phys. Lett. Vol. 82, No. 8, Feburary (2003) 1221 – 1223.

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi:
Fabrication of Si single-electron transistors with precise dimensions using electron-beam nanolithography
J. Vac. Sci. Technol. Vol. B21, No. 1, January/February (2003) 1 – 5.

T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase:
Ultimately thin double-gate SOI MOSFETs
IEEE Trans. Electron devices Vol. 50, No. 3, March (2003) 830 – 838.

2002
Paper for invited talk
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, Y. Takahashi:
Fabrication of single-electron transistors and circuits using SOIs
Solid-State Electronics Vo1. 46, No. 11, November (2002) 1723 – 1727.

Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa:
Review article: Silicon single-electron devices
J. of Phys.; Condens. Matter, Vol. 14, No. 39, October (2002) R995-R1033.

Y. Ono, H. Inokawa, Y. Takahashi:
Binary adder of single-electron transistors: Specific design using pass-transistor logic
IEEE Trans. Nanotechnology Vol. 1, No. 2, June (2002) 93-99.

M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, Y. Takahashi:
Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation
Applied Surface Science Vol. 190, No. 1-4, May (2002) 144 – 150.

Y. Ono and Y. Takahashi:
Observation and circuit application of negative differential conductance in Si single-electron transistors
Jpn. J. Appl. Phys. Vol. 41, No. 4B, April (2002) 2569 -2573.

R. Nuryadi, Y. Ishikawa, Y. Ono, M. Tabe:
Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum
J. Vac. Sci. Technol. Vol. B20, No. 1, January/February (2002) 167 – 172.

2001
Paper for invited talk
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi:
Single-electron and quantum SOI devices
Microelectronic Engineering Vo1. 59, No. 1-4, November (2001) 435 – 442.

Y. Ono, K. Yamazaki, Y. Takahashi: Si single-electron transistors with high voltage gain
IEICE Trans. Electron. Vol. E84-C, No. 8, August, (2001) 1061 – 1065.

2000
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Si complementary single-electron inverter with voltage gain
Appl. Phys. Lett. Vol. 76, No. 21, May (2000) 3121 – 3123.

Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Single-electron transistors and current-switching devices fabricated by Vertical Pattern-Dependent Oxidation
Jpn. J. Appl. Phys. Vol. 39, No. 4B, April (2000) 2325 – 2328.

Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Fabrication method for IC-oriented Si single-electron transistors
EEE Trans. on Electron Devices Vol. 47, No. 1, January (2000) 147 – 153.