A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe ,D. Moraru
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Appl. Phys. Lett.Vol.110, May  (2017) 093107_1-5.

T.Watanabe, M.Hori, T.Tsuchiya, A.Fujiwara, Y.Ono
Time-domain charge pumping on silicon-on-insulator MOS devices
Jpn. J. Appl. Phys.,Vol.56, January (2017) 011303_1-5.

M. Hori, T.Tsuchiya, Y. Ono:
Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor
Applied Physics Express, Vol.10, January (2017) 015701_1-4.

(Conference proceedings)
M. Hori, Y. Ono
EDMR on recombination process in silicon MOSFETs at room temperature
Advances in intelligent system and computing, Vol. 519, January (2017), pp. 89-93

(Conference proceedings)
Y. Ono, M. Hori, G. P. Lansbergen, A. Fujiwara
Manipulation of single charges using dopant atoms in silicon – Interplay with intervalley phonon emission –
Advances in intelligent system and computing, Vol. 519, January (2017), pp.137-141

E.Prati, K.Kumagai, M.Hori, T.Shinada:
Band transport across a chain of dopant sites in silicon over micron distances and high temperatures
Scientific Reports, Vol.6, January (2016) 19704_1-8.

M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi:
Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
J. Appl. Phys., Vol.118, No. 21, December (2015) 214305_1-6.

M. Hori, A. Fujiwara, M. Uematsu, Y. Ono:
Electrical activation and electron spin resonance measurements of arsenic implanted in silicon
Appl. Phys. Lett., Vol.106, No. 14, April (2015) 142105_1-4.

T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono:
Evaluation of accuracy of time-domain charge pumping
IEICE Trans. Electron, Vol.E98-C, No. 5, May (2015) 390-394.

T.Tsuchiya, Y. Ono:
Charge pumping current from single Si-SiO2 interface traps:
Direct observation of Pb centers and fundamental trap-counting by the charge pumping method
Jpn. J. Appl. Phys., Vol.54, January (2015) 04DC01_1-7. (JSAP paper award)

M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono:
Direct observation of electron emission and recombination processes by time domain measurementsof charge pumping current
Appl. Phys. Lett., Vol.106, No. 4, January (2015)041603 _1-4.

M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono:
Analysis of electron capture process in charge pumping sequence using time domain measurements
Appl. Phys. Lett., Vol.105, No. 26, December (2014) 261602_1 -4.

K. Nishiguchi, Y. Ono, A. Fujiwara:
Single-electron thermal noise
Nanotechnology, Vol.25, No. 27, June (2014) 275201_1-7.

Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama:
Electron and hole mobilities at a Si/SiO 2 interface with giant valley splitting
Appl. Phys. Lett. Vol.102, No. 19, May (2013) 191603_1-4.

E.Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada:
Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor
Nature Nanotechnology, Vol.7, No. 7, July (2012) 443-447.

M. Hori, K. Taira, A. Komatsubara, K. Kumagai, Y. Ono, T. Tanii, T. Endoh,T. Shinada:
Reductionof threshold voltage fluctuation in field-effect transistors by controllingindividual dopant position
Appl. Phys. Lett. Vol.101, No. 10, July (2012) 013503_1-3.

G.P.Kabsbergen, Y.Ono, A.Fujiwara:
Donor-based single electron pumps with tunable donor binding energy
Nano Letetrs, Vol.12,(2012) 763-768.

H .Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, M. Notomi:
Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers
Optics Express, Vol.19, No. 25, December (2011) 25255-25262

Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta:
Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon
Thin Solid Films, Vol.519, No. 24, October (2011) 8505-8508.

M. Hori, T. Shinada, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, Ohdomari:
Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
Appl. Phys. Lett., Vol.99, No. 6, August (2011) 062103_1-3.

T. Goto, H. Inokawa, Y. Ono, A. Fujiwara, K. Torimitsu:
Electrical measurements of terphenyl-based molecular devices
Jpn. J. Appl. Phys., Vol.50, No. 7, July (2011) 071603_1-6.

M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, A. Fujiwara:
Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 and 285 K
J. Appl. Phys., Vol.110, No. 19, July (2011) 014512_1-6.

K. Nishiguchi, Y. Ono, A. Fujiwara:
Single-electron counting statistics of shot noise in nanowire Si MOSFETs
Appl. Phys. Lett., Vol.98, No. 19, May (2011) 193502_1-3.

M. Hori, T. Shinada, K. Taira, A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari:
Enhancing secondary electron detection efficiency by applying a substrate bias voltage for deterministic single-ion  doping
Appl. Phys. Express, Vol.4, No. 4, March (2011) 046501_1-2.

Y. Takahashi, M. Jo, T. Kaizawa, Y. Kato, M. Arita, A. Fujiwara , Y. Ono, H. Inokawa, J.-B. Choi:
Si Nanodot device fabricated by thermal oxidation and their applications
Key Engineering Materials, Vol.470, No. 3, February (2011) 175-183.

J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara:
Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., Vol.98, No. 3, January (2011) 033503_1-3.

K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, K. Muraki:
Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding
Semicond.Sci.Techol., Vol.25, No.12, Novmber(2010) 125001_1-4.

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara:
Resonant escape over an oscillating barrier in a single-electron ratchet transfer
Phys. Rev. B, Vol. 82, No. 3, July (2010) 033303_1-4.

M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, T. Mizuno:
Single-electron transport through single dopants in a dopant-rich environment
Phys. Rev. Lett., Vol.105, No. 1, July (2010) 016803_1-4.

J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, A. Fujiwara:
Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., Vol. 96, No. 11, March (2010) 112102_1-3.

M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi:
Fabrication of double-dot single-electron transistor in silicon nanowire
Thin Solid Films, Vol. 518, No. 6S1, January (2010) S186-S189.