Research Objectives

Our research involves the control of single charges, spins, and phonons (atom vibrations)
at the dopants and interface dangling bonds in silicon. In particular, we are currently focusing on the following two issues:

  1. Manipulation of single charges and spins based on the charge pumping process in silicon transistors.
  2. Development of the single-atom inelastic tunneling spectroscopy for the manipulation of single localized phonons.

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