international 1991-1999

1999
Y.Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
Si complementary single-electron inverter,
1999 International Electron Devices Meeting (IEDM-1999, December 5-8, Washington, USA). Technical Digest, pp. 367-370.

T.Ernst, D. Munteanu, S. Christoloveanu, T. Ouisse, N. Hefyene, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase:
Ultimately thin SOI MOSFETs: Special characteristics and mechanisms,
1999 IEEE International SOI Conference (1999, October 4-7, Rohnert Park, CA, USA). Abstract, pp. 92-93.

Y.Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation (VPADOX).
1999 International Conference on Solid State Devices and Materials (SSDM-1999, September 21-24, Tokyo). Extended abstract, pp. 230-231.

1998
Y.Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
Fabrication method for IC-oriented Si twin-island single-electron transistors,
1998 International Electron Devices Meeting (IEDM-1998, December 6-9, San Fransisco, USA).Technical Digest, pp. 123-126 (1998).

1996
Y.Ono, Y. Takahashi, S. Horiguchi, K. Murase, and M. Tabe:
Electron tunneling from a quantum wire formed at the edge of a SIMOX-Si layer,
1996 International Conference on Solid State Devices and Materials (SSDM-1996, August 26-29, Yokohama) Extended abstract, pp. 178-180.

1992

Y. Ono and M. Tabe:
STM study of thermal oxidation process on Si(111)7×7 surfaces
1992 International Conference on Solid State Devices and Materials (SSDM-1992, August 26-28, Tsukuba) Extended abstract, pp. 196-198.

1991
Y.Ono, Tabe, and Y. Sakakibara:
Fluorine segregation at SiO2/Si interface
1991 International Conference on Solid State Devices and Materials (SSDM-1991, August 27-29, Yokohama) Extended abstract, pp. 490-492.