| Year | Title, Authors, Journal |
| 2021 | “Heat transport through propagon-phonon interaction in epitaxial amorphous-crystalline multilayers” by Takafumi Ishibe, Ryo Okuhata, Tatsuya Kaneko, Masato Yoshiya, Seisuke Nakashima, Akihiro Ishida, and Yoshiaki Nakamura, Communications Physics 4, 153, 2021. (7 pages) |
| 2021 | “Landau level spectroscopy of PbSnSe topological crystal insulator” by K. K. Tikuisis, J. Wyzula, L. Ohnoutek, P. Cejpek, M. Hakl, C. Faugeras, K. Vyborny, A. Ishida, M. Veis, and M. Orlita, Physical Review B 103, 155304 (2021). |
| 2021 |
“Fine structural and photoluminescence properties of Mg2Si nanosheet bundles rooted on Si substrates” T Koga, R Tamaki, X Meng, Y Numazawa, Y Shimura, N Ahsan, Y Okada, A. Ishida, and H. Tatsuoka, Jpn J. Appl. Phys. 60, SBBK07, 2021 (6 pages). |
| 2020 | “Formula for energy conversion efficiency of thermoelectric generator taking temperature dependent thermoelectric parameters into account”, Akihiro Ishida, J. Appl. Phys. 128, 135105 (2020). (9 pages) |
| 2018 | “Fabrication of magneto-optical waveguides inside transparent silica xerogels containing ferrimagnetic Fe₃O₄ nanoparticles”, Seisuke Nakashima, Ryohei Okabe, Koji Sugioka, and Akihiro Ishida, Optics Express 26 (24), 031898 (2018). (10 pages) |
| 2018 | ”Thermoelectric properties of PbTe films and PbTe-based superlattices”, Akihiro Ishida, Hoang Thi Xuan Thao, Seisuke Nakashima, Hidenari Yamamoto, and Mamoru Ishikiriyama, Materials Today, Proceedings 5, 10187-194 (2018). |
| 2018 | “Interband absorption in PbTe/PbSnTe-based type-II superlattices”, Akihiro Ishida, Kazuma Naruse, Seisuke Nakashima, Yasushi Takano, Shaoqing Du, and Kazuhiko Hirakawa, Appl. Phys. Lett. 113, 072103 (2018) (Editor’s pick) |
| 2018 | “Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates”Peiling Yuan, Ryo Tamaki, Shinya Kusazaki, Nanae Atsumi, Yuya Saito, Yuki Kumazawa, Nazmul Ahsan, Yoshitaka Okada, Akihiro Ishida and Hirokazu Tatsuoka, Jpn. J. Appl. Phys. 57, 04FJ01 (2018). (7 pages) |
| 2017 | “PbSrS/PbS mid-infrared short-cavity edge-emitting laser on Si substrate”, Akihiro Ishida and Seisuke Nakashima, Appl. Phys. Lett. 111, 161104 (2017). |
| 2017 | “Thermal conductivity measurement of thermoelectric thin films by a versatility-enhanced 2wmethod”, R. Okuhata, K. Watanabe, S. Ikeuchi, A. Ishida, and Y. Nakamura, J. Electronic Materials 46(5), 3089-3096 (2017). |
| 2016 | “Magneto-optical properties of Waveguide Structures Containing Magnetic Nanoparticles using Femtosecond Laser”, Seisuke Nakashima, Ryohei Okabe, Koji Sugioka, and Akihiro Ishida, Nanotechnology (IEEE Nano), 515-518 (2016). |
| 2016 | “Amorphous / Epitaxial Superlattice for Thermoelectric Application”, A. Ishida, H. T. X. Thao, M. Shibata, S. Nakashima, H. Tatsuoka, H. Yamamoto, Y. Kinoshita, M. Ishikiriyama, and Y. Nakamura, Jpn. J. Appl. Phys. 55, 081201 (2016). |
| 2015 | “Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity”,Akihiro Ishida, Hoang Thi Xuan Thao, Hidenari Yamamoto, Yohei Kinoshita, and Mamoru Ishikiriyama, AIP Advances 5, 107135 (2015). |
| 2012 | “IV-VI mid-infrared VECSEL on Si-substrate”, M. Fill ; F. Felder ; M. Rahim ; A. Khiar ; R. Rodriguez ; H. Zogg ; A. Ishida, SPIE Proc. 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (February 9, 2012); |
| 2012 | “Electronic transport for thermoelectric applications on IV-VI semiconductors”, Akihiro Ishida, Yutaro Sugiyama, Hirokazu Tatsuoka, Tomoki Ariga, Mikio Koyano, and Sadao Takaoka, Materials transactions “Special Issue on Thermoelectric Conversion materials VII” online published May 9, 2012 . |
| 2011 | “2W high efficiency PbS mid-infrared surface emitting laser”, A. Ishida, Y. Sugiyama, Y. Isaji, K. Kodama, Y. Takano, H. Sakata, M. Rahim, A. Khiar, M. Fill, F. Felder, and H. Zogg, Appl. Phys. Lett. 99, 121109 (2011). |
| 2011 | “Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si”, A. Khiar, M. Rahim, M. Fill, F. Felder, H. Zogg, D. Cao, S. Kobayashi, T. Yokoyama, and A. Ishida, J. Appl. Phys. 110, 023101 (2011). |
| 2011 | “Thermomagnetic Effects in High-Mobility PbTe Films”, Tomoki Ariga, Mikio Koyano and Akihiro Ishida, Journal of Electronic Materials 40 (5), 687-690,2011. |
| 2011 | ”Seebeck Effects and Electronic Thermal Conductivity of IV-VI Materials”, A. Ishida, T. Yamada, T. Nakano, Y. Takano, and S. Takaoka, Jpn. J. Appl. Phys. 50, 031302 (2011). |
| 2010 | “Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers” Q. Yang, Y. Saeki, S. Izumi, T. Nukui, A. Takeuchi, A. Ishida, H. Tatsuoka, Applied Surface Sci. 256, pp6928-6931 (2010). |
| 2010 | ”Electrical and optical properties of SnEuTe and SnSrTe films”, A.Ishida, T. Tsuchiya, T. Yamada, D. Cao, S. Takaoka, M. Rahim, F. Felder, and H. Zogg. J. Appl. Phys. 107(12), 123708 (2010). |
| 2010 | “Semimetallic properties of SnTe/PbSe type-II superlattices” Akihiro Ishida, Tomohiro Yamada, Takuro Tsuchiya, Yoku Inoue, Takuji Kita, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems Volume 3, Issue 2, Pages 1103-1378 (31 January 2010) |
| 2009 | ”PbTe/PbS Multilayer Mirror for EuTe/PbTe Surface Emitting Quantum Cascade Lasers”, Daoche Cao, Taiki Yamano, Yoku Inoue, and Akihiro Ishida, 電気学会論文誌A, Vol.129, No.11, 799-801 (2009). |
| 2009 | “Electrical and thermoelectrical properties of SnTe-based films and superlattices”, A.Ishida, T.Yamada, T.Tsuchiya, Y.Inoue, S.Takaoka, and T.Kita, Appl. Phys. Lett. 95, 112106 (2009). |
| 2009 | “Seebeck effect in PbTe films and EuTe/PbTe superlattices”, A. Ishida, T. Yamada, D. Cao, Y. Inoue, M. Veis, and T. Kita, J. Appl. Phys. 106(2),023718(2009). |
| 2009 | “Seebeck Coefficient of Ultrathin Silicon-on-Insulator layers” Faiz Salleh, Kiyosumi Asai, Akihiro Ishida, and Hiroya Ikeda, Applied Physics Express, 2,071213(2009). |
| 2009 | “Seebeck Effect in IV–VI Semiconductor Films and Quantum Wells”, Akihiro Ishida, Daoshe Cao, Sinsuke Morioka, Yoku Inoue and Takuji Kita, Published online in Journal of Electronic materials 38(7), pp.940-943 (2009). |
| 2008 | “Morphology control of GaN nanowires by Vapour-liquid-solid growth” Y.Inoue, A.Tajima, A.Ishida, and H.Mimura, Phys. Stat. Sol. (c) 5, No.9, 3001-3003 (2008). |
| 2008 | “Growth and density control of GaN nanodots and nanopillars”, S.Takeda, Y.Inoue, A.Ishida, and H.Mimura, Phys. Stat. Sol. (c), 5, No.9, 3008-3010 (2008). |
| 2008 | “Size control of Fe nanoparticles for carbon nanotube growth using carbonyl iron vapour” K.Ohara, Y.Neo, H.Mimura, Y.Inoue, and A.Ishida, Phys. Stat. Sol. (c), 5, No.9, 3169-3171 (2008). |
| 2008 | “One-step growth aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition”, Y. Inoue, K. Kakihata, Y. Hirono, T. Horie, A. Ishida, and H. Mimura, Appl. Phys. Lett. 92, 213113 (2008). |
| 2008 | “Enhanced Seebeck coefficient in EuTe/PbTe [100] short-period superlattices”, A. Ishida, D. Cao, S. Morioka, M. Martin, Y. Inoue, and Y. Kita, Appl. Phys. Lett. Vol. 92, pp.182105 (2008). |
| 2008 | “AlN/GaN superlattice quality improvement by using multiple superlattice structure”, M. Veis, K. Hagihara, S. Nakagawa, Y. Inoue and A. Ishida, Physica status solidi (c), Vol 5, pp. 1547-1549 (2008). |
| 2007 | ”Strong Intersubband Absorption in EuTe/PbTe Double-Well Superlattices at Normal Incidence”, Akihiro ISHIDA, Martin VEIS, and Yoku INOUE, Jpn. J. Appl. Phys. .Vol.46 (2007) No.13 pp.L281 – L283. |
| 2007 | “Growth and field emission of GaN nanowires grown by metal organic chemical vapor deposition”, Y. Inoue, A. Tajima, S. Takeda, A. Ishida, H. Mimura, and S. Sakakibara, Phys. Stat. Sol. (c) 4, 2366-2370 (2007). |
| 2005 | “Zn3N2 compensated ZnTe films and ZnTe/ZnSe superlattices grown by hot wall epitaxy”, S. Sakakibara, Y. Inoue, H. Mimura, K. Ishino, A. Ishida and H. Fujiyasu, Applied Surface Science, 244, pp.343-346 (2005). |
| 2005 | Design and preparation of AlN/GaN quantum wells for quantum cascade laser application (A.Ishida, K.Matsue, Y.Inoue, H.Fujiyasu, H.J.Ko, A.Setiawan, J.J.Kim, H.Makino, and T.Yao) Jpn. J.Appl.Phys. 44(8), pp.5918-5922 (2005). |
| 2005 | Growth of Pillarlike GaN Nanostructures (S.Takeda, K.Ishino, Y.Inoue, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi and S.Sakakibara) Jpn. J. Appl. Phys. 44(7B), pp.5664-5666 (2005). |
| 2005 | エンベロップ関数近似による量子カスケ－ド構造の設計（石田明広）日本赤外線学会誌Vol.14(2) pp.83-86 (2005). |
| 2005 | “Resonant-tunneling electron emitter in AlN/GaN system”, A.Ishida, K.Matsue, Y.Inoue, and H.Fujiyasu, Appl.Phys.Lett. 86, pp.183102 (2005). |
| 2004 | “Cathodeluminescence of polycrystalline GaN grown by a hot wall epitaxy technique”, Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H.Kominami, H. Mimura, Y. Nakanishi, S. Sakakibara, Phys. Stat. Sol. (b) 241, No.12, pp.2717-2721(2004). |
| 2004 | Strong luminescence from dislocation-free GaN nanopillars (Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, and Y.Nakanishi) Appl.Phys.Lett. 85(12), pp.2340-2342 (2004). |
| 2004 | Fabrication and characterization of short period AlN/GaN quantum cascade laser structures (Y.Inoue, H. Nagasawa, N. Sone, K. Ishino, A. Ishida, H. Fujiyasu, J. J. Kim, H. Makino, T. Yao, S. Sakakibara, M. Kuwabara) J.Cryst. Growth 265,65-70(2004). |
| 2004 | [(AlN)1/(GaN)n1]/(AlN)n2-based quantum wells for quantum cascade-laser application (A.Ishida, Y.Inoue, H.Nagasawa, N.Sone, K.Ishino, J.J.Kim, H.Makino,, T.Yao, H.Kan, H.Fujiyasu) Physica E 21 pp.765-769(2004). |
| 2002 | Characterization of AlN/GaN Quantum-Cascade Structures Prepared by Hot-Wall Epitaxy(A.Ishida, T.Ose, H.Nagasawa, Y. Inoue, and H.Fujiyasu, H.Makino and T.Yao) Physica Status Solidi (ｃ) Vol.0, pp520-523(2002). |
| 2002 | AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectiors Utilizing polarization Fields (A.Ishida, Y.Inoue, M.Kuwabara, H.Kan, and H.Fujiyasu) Jpn.J.Appl.Phys. Vol.41, pp.L1303-L1305(2002). |
| 2002 | PbSnCaTe films and PbSnCaTe/PbSnTe superlattices prepared by molecular-beam epitaxy (A.Ishida, T.Ohashi, S.Wang, T. Tsuchiya, K. Ishino, Y. Inoue, H. Kan and H. Fujiyasu) Jpn.J.Appl.Phys.Vol.41, pp.3655-3567(2002). |
| 2002 | AlN/GaN Short-Period Superlattices with Monolayer AlN for Optical-Device Applications (A.Ishida, M.Kitano, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu, H.Kan, H.Makino , and T.Yao) Physica E, Vol.13, pp.1098-1101(2002). |
| 2002 | Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect (A.Ishida, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue and H.Fujiyasu) Jpn.J.Appl.Phys. Part2, Vol.41, No.3A, pp.L236-238(2002). |
| 2000 | Conductivity atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source (F.Iwata, S.Chu, A.Sasaki, K.Ishino, A.Ishida, and H.Fujiyasu) J.Appl.Phys.88, pp.1670-1673(2000). |
| 1999 | “Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering”, H. Harima, E. Kurimoto,Y. Sone, S. Nakashima, S. Chu, A. Ishida, and H. Fujiyasu, Physica Status Solidi b 216, Issue 1, November 1999, pp 785–788(1999). |
| 1999 | Terahertz emission spectroscopy of coherent phonons in semiconductors（Masahiko Tani, Ryoichi Fukasawa, Michael Herrmann, Kiyomi Sakai, Shin-ichi Nakashima, Nobuya Yoshioka, Akihiro Ishida, and Hiroshi Fujiyasu ）Proc. SPIE 3624, 109 (1999) |
| 1999 | GaN and InGaN prepared by hot wall beam epitaxy(S.Sakakibara, F.Tanoue, M.Ohbora, M.Kaneko, T.Nakayama, K.Ishino, A.Ishida, H.Fujiyasu) Appl.Surf.Sci.Vol.142, pp.362-366 (1999).
(30) Growth and characterization of hot-wall epitaxal InGaN films using mixed (Ga+In) source (S.Chen, T.Saisho, K.Fujimura, S.Sakakibara, F.Tanoue, K.Ishino, A.Ishida, H.Harima, Y.Oka, K.K.Takahiro, Y.Chen, T.Yao, and H.Fujiyasu) Jpn.J.Appl.Phys. 38, 4973-4979(1999). |
| 1999 | PbCaTe films and PbCaTe/PbTe superlattices prepared by hot wall epitaxy (A.Ishida, T.Tsuchiya, N.Yoshioka, K.Ishino, and H.Fujiyasu) Jpn.J.Appl.Phys. Vol.38, pp.4652-4655 (1999). |
| 1999 | High quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source (S.Chu, T.Saisho, K.Fujimura, S.Sakakibara, F.Tanoue, K.Ishino, A.Ishida, and H.Harima, Y.Chen, T.Yao, and H.Fujiyasu) Jpn.J.Appl.Phys 38, L427-429(1999). |
| 1999 | Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxy (A.Ishida, K.Matsuda, S.Chu, F.Tanoue, S.Sakakibara, K.Ishino, S.Fuke, and H.Fujiyasu) Materials Science & Engineering B59, pp.230-234(1999). |
| 1998 | Preparation of GaN films of low carrier density by HWE system with Ga and TMG sources (S.Chu, K.Fujimura, D.Suzuki, S.Sakakibara, F.Tanoue, A.Ishida, K.Ishino, K.Aiki, H.Fujiyasu) J.Cryst.Growth 189/190, 340(1998). |
| 1998 | Growth of GaN and InGaN prepared by hot wall beam epitaxy system with NH3 (F.Tanoue, S.Sakakibara, M.Ohbora, K.Ishino, A.Ishida, and H.Fujiyasu) J.Cryst.189/190,47(1998). |
| 1996 | Study of Some dd transition of Mn in Strained layer ZnS-CdS(Se):Mn Superlattices (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.H iyoshi, S.Sakakibara) Inorganic and Organic Electroluminescence, pp.61-64(1996). |
| 1996 | Properties of Manganese Doped Electroluminescent Devices of ZnCdSSeTe Superlattices Systems (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.Hiyoshi, S.Sakakibara) Inorganic and Organic Electroluminescence, pp.169-172(1996). |
| 1996 | Properties of Cerium Doped Electroluminescent Devices of SrS/ZnS Multiple Layers (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.Hiyoshi, S.Sakakibara) Inorganic and Organic Electroluminescence pp.295-298(1996). |
| 1995 | Vapor phase growth of HgTe and HgCdTe films under controlled mercury pressure (H.Kuwabara, H.Tatsuoka, A.Ishida, H.Fujiyasu, Y.Nakanishi, M.Nakayama) J.Crystal Growth 159, pp.839 (1995). |
| 1995 | Growth of GaN films by hot wall epitaxy(A.Ishida, E.Yamamoto, K.Ishino,K.Ito, H.Fujiyasu, and Y.Nakanishi) Appl.Phys.Lett.Vol.67,No.5, pp.665-666(1995). |
| 1994 | PbMgSrTe and PbSrTeSe films prepared by hot wall epitaxy ( N.Sakurai, K.Matsushita, H.Fujiyasu, and A.Ishida) Jpn.J.Appl.Phys. Vol.33, Part 1, pp.6486-6490 (1994). |
| 1994 | 量子井戸・多層構造ＥＬ素子（藤安 洋、疋田京子、石田明広）ディスプレイ＆イメ－ジング Vol.3,pp.215-223,(1994). |
| 1994 | HgTe and HgCdTe vapor phase growth under controlled Hg pressure (H.Kuwabara, H.Tatsuoka, Y.Nakanishi, A.Ishida, H.Fujiyasu, M.Nakayama, and T.Yamanashi) J. Crystal Growth Vol.138,pp.964-969(1994). |
| 1994 | PbSrS MQW lasers and the effect of quantum well on operation temperature (A.Ishida,N.Sakurai,N.Aikawa, and H.Fujiyasu) Solid-State Electronics Vol.37, Nos.4-6, pp.1141-1144(1994). |
| 1994 | Lead-strontium-telluride films and lasers prepared by hot wall epitaxy (N.Sakurai, H.Fujiyasu, and A.Ishida) Jpn.J.Appl.Phys.Vol.33, Part 1,No.1A, pp.151-154(1994). |
| 1994 | PbSrS lasers prepared by hot wall epitaxy (A.Ishida,H.Takashiba, T.Izutsu H.Fujiyasu, and H.Böttner) J.Appl.Phys.75(1),619-620(1994). |
| 1994 | Characteristics of Chlorine-doped ZnSe films and ZnSe-ZnS superlattices grown by hot wall epitaxy (S.Sakakibara, K.Fujimoto, N.Amano, K.Ishino, A.Ishida, H.Fujiyasu) Jpn. J. Appl. Phys. Vol.33, Part 1, No.4A, pp.2008-2014 (1994). |
| 1993 | (51) Red Electroluminescent Devices Using Mn-doped CdS(Se)- and CdTe-ZnS Superlattices (K.Hikida,K.Ishino,A.Ishida,T.Kiichi,and H.Fujiyasu) Jpn. J. Appl. Phys. Vol.32, 506-508 (1993). |
| 1993 | Characterization of Nitrogen-doped ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy(S.Sakakibara,N.Amano,K.Ishino, A.Ishida, and H.Fujiyasu) Jpn. J. Appl. Phys. Vol.32, Part 1,No.10, pp.4703-4708 (1993). |
| 1993 | Preparation of II-VI compound films and superlattices by hot wall epitaxy and their applications to light emitting devices (H.Fujiyasu and A.Ishida) New Functionally Materials Vol.A, 203-209(1993). |
| 1993 | Red-yellow CdSSe-ZnS, and blue-green SrS and CdSSe-SrS superlattice double insulating EL devices by hot wall epitaxy(H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino, and A.Ishida) Appl.Surf.Sci.Vol.65/66,455-460(1993). |
| 1993 | Preparation of CdSSe-ZnS, and SrS and CdSSe-SrS superlattices by hot wall epitaxy and their applications to electroluminescence devices (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino, and A.Ishida) J.Electronic Materials Vol.22,No.5,pp.545 (1993). |
| 1993 | Double heterostructure Pb1-xSrxS/Pb1-ySryS lasers prepared by hotwall epitaxy (S.Mohammadnejad, K.Aikawa, A.Ishida, and H.Fujiyasu) Jpn.J.Appl.Phys.Vol.32,part 1,No.4,pp.1658-1660(1993). |
| 1992 | ホットウォ－ル法によるSrS:Ce薄膜とCdSSe-ZnS超格子とそのEL素子への応用（竹内要二、増尾浩樹、田中貴久、後藤佳彦、石野健英、石田明広、藤安洋）真空、35、787-793(1992). |
| 1992 | CdSSe:Mn-ZnS超格子による赤色EL素子（竹内要二、疋田京子、中村高遠、石野健英、石田明広、藤安洋）真空、35、781-786(1992). |
| 1992 | ZnS:Mn Electroluminescent Films prepared by Hot Wall Technique (Y.Takeuchi,Y.Okuno, T.Nakamura, K.Ishino, A.Ishida, and H.Fujiyasu) Jpn.J.Appl.Phys.31,1391-1395(1992). |
| 1992 | Mn doped ZnS and/or ZnS-CdS superlattice double insulating EL devices by hot wall epitaxy (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino,and A.Ishida) J.Cryst.Growth, 117,1026-1029(1992). |
| 1992 | Growth of Pb1-x-yCdxSryS films and SLs by hot wall epitaxy for 3 um lasers, and their electrical properties (S.Mohammadnejad, K.Matsushita, T.Izutsu, A.Ishida, and H.Fujiyasu) Jpn. J.Appl.Phys.31,3951-3956(1992). |
| 1992 | Photoconductive properties of PbSrS/PbSnS superlattices (A.Ishida, K.Matsushita, T.Sugimoto, H.Akimoto, S.Mohammadnejad and H.Fujiyasu) Surface Science Vol.267, 149-152(1992). |
| 1992 | Mn doped ZnS and/or ZnS-CdS superlattice double insulating EL devices by hot wall epitaxy (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino,and A.Ishida) J.Cryst.Growth, 117,1026-1029(1992). |
| 1990 | Transmission spectra of substrate-free ZnTe-ZnSe superlattices (H.Yang, A.Ishida, and H.Fujiyasu) Appl.Phys.Lett. 56(21), 2114-2116(1990). |
| 1990 | Structure analysis of ZnTe-ZnSe strained layer superlattices by transmission electron microscopy observation (H.Yang, Y.Takenaka,A.Ishida, and H.Fujiyasu) J.Appl. Phys. 68 (4),1606-1609(1990). |
| 1990 | X-ray [440] diffraction of the strained-layer superlattices grown on GaAs (001) substrates (H.Yang, A.Ishida, and H.Fujiyasu) J.Appl.Phys. 68 (1),112-115(1990). |
| 1990 | Monolithic photovoltaic PbS on Si infrared array (J.Masek,A.Ishida, H.Zogg, C.Maissen, and S.Blunier), IEEE Electron Device Lett. Vol.11, 12-14 (1990). |
| 1990 | Laser application of Pb1-xSrxS films prepared by hot wall epitaxy (A.Ishida, K.Muramatsu, K.Ishino, and H.Fujiyasu) J. Semicon. Sci. Tech. 5, S334-S337 (1990). |
| 1989 | Pb1-xSrxS/PbS double heterostructure lasers prepared by hot wall epitaxy (A.Ishida, K.Muramatsu, H.Takashiba, and H.Fujiyasu) Appl.Phys.Lett. Vol.55, 430-431(1989). |
| 1989 | Interband transitions of ZnTe-ZnSe superlattices prepared on GaAs(100) by hot wall epitaxy (H.Yang, A.Ishida, H.Fujiyasu, and H.Kuwabara) J. Appl. Phys. Vol.65, 2838-2842 (1989). |
| 1989 | High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (Y.H.Wu, H.Yang, A.Ishida, H.Fujiyasu,S.Nakashima, and K.Tahara) Appl. Phys. Lett.Vol.54, 239-241 (1989). |
| 1990 | Barrier layer thickness dependence of electronic subband structures in PbTe/Pb1-xSnxTe superlattices (S.Shimomura, Y.Urakawa,T.Takaoka, K.Murase, A.Ishida, and H.Fujiyasu) Superlattices and Microstructures Vol.7,5-11(1990). |
| 1989 | Lead-europium-chalcogenide films and superlattices for 3 mｍ laser (A.Ishida, Y.Sase, N.Nakahara, T.Okamura, and H.Fujiyasu) Superlattices and Microstructures Vol.6, 27-30 (1989). |
| 1988 | Optical properties of PbTe/Pb1-xEuxTe superlattices prepared by hot wall epitaxy (A.Ishida, Y.Sase, and H.Fujiyasu) Applied Surface Sciences Vol.33&34, 868-874(1988). |
| 1988 | Properties of CdS-ZnS superlattices prepared by hot wall epitaxy (H.Fujiyasu, T.Sasaya, M.Katayama, K.Ishino, A.Ishida) Applied Surface Sciences Vol.33&34, 854-861(1988). |
| 1988 | Electron spin resonance studies on the superlattices PbTe-Pb1-xEuxTe prepared by hot wall epitaxy (T.Nakamura, A.Ishida, and H.Fujiyasu) Thin Solid Films Vol.161, 149-156 (1988). |
| 1988 | Pb1-xEuxS films prepared by hot wall epitaxy (A.Ishida, N.Nakahara,T.Okamura, Y.Sase, and H.Fujiyasu) Appl.Phys.Lett.Vol.53, 274-275(1988). |
| 1988 | Properties of Pb1-xEuxTe films prepared by hot-wall epitaxy (A.Ishida, S.Matsuura, M.Mizuno, Y.Sase, and H.Fujiyasu) J.Appl.Phys.Vol.63, 4572-4574(1988). |
| 1988 | Photoluminescence Properties of ZnTe-ZnSe superlattices grown by hot wall epitaxy (H.Yang, H.Fujiyasu, Y.Wu, A.Ishida, and H.Kuwabara) J. Luminescence Vol.40&41, 717-718 (1988). |
| 1987 | Observation of quantum-size effects in optical transmission spectra of PbTe/Pb1-xEuxTe superlattices (A.Ishida, S.Matsuura, M.Mizuno, and H.Fujiyasu) Appl. Phys. Lett. Vol.51, No.7, pp.478-480(1987). |
| 1986 | Properties of PbTe/EuTe short period superlattices and their application to laser diodes (A.Ishida, S.Matsuura, H.Fujiyasu, H.Ebe, and K.Shinohara) Superlattices and Microstructures Vol.2, No.6, pp.575-580 (1986). |
| 1986 | An indication of quantum Hall effect in PbTe-Pb1-xSnxTe superlattices (S.Takaoka, F.Nihei, K.Murase, A.Ishida, and H.Fujiyasu) J. Phys. Soc. Japan Vol.55, No.8, pp.2519-2522(1986). |
| 1986 | Semimetallic electrical transport in PbTe-SnTe superlattices on KCl substrate (S.Takaoka, T.Okumura, K.Murase, A.Ishida, and H.Fujiyasu) Solid State Communications Vol.58, No.9, pp.3023-3027 (1986). |
| 1986 | Lasing Mechanism of type-I’ PbSnTe-PbTeSe multiquantum well laser with doping structure (A.Ishida, H.Fujiyasu, H.Ebe, and K.Shinohara) J. Appl. Phys. Vol.59, No.9, pp.3023 – 3027 (1986). |
| 1985 | Burstein-Moss effect of PbTe-Pb1-xSnxTe superlattice (A.Ishida and H.Fujiyasu) Jpn. J. Appl.Phys. Vol.24, pp.L956-L958(1985). |
| 1985 | PbSnTe multiple quantum well lasers for pulsed operation at 6mm up to 204K (K.Shinohara, Y.Nisijima, H.Ebe, A.Ishida, and H.Fujiyasu) Appl.Phys.Lett. Vol.47, No.11, pp.1184-1186 (1985). |
| 1986 | Superconducting behavior in PbTe-SnTe superlattices (K.Murase, S.Ishida, S.Takaoka, T.Okumura,H.Fujiyasu, A.Ishida, and M.Aoki) Surface Science Vol.170, pp.486-490 (1986). |
| 1985 | Semimetallic Hall properties of PbTe-SnTe superlattice (A.Ishida, M.Aoki, and H.Fujiyasu) J. Appl. Phys. Vol.58, No.5, pp.1901-1903 (1985). |
| 1985 | Sn diffusion effects on x-ray diffraction patterns of Pb1-xSnxTe-PbSeyTe1-y superlattices (A.Ishida, M.Aoki,and H.Fujiyasu) J.Appl.Phys.Vol.58, No.2, pp.797-801(1985). |
| 1985 | On the type of superlattices in Lead-Tin-Telluride system (K.Murase, S.Shimomura, S.Takaoka, A.Ishida, and H.Fujiyasu) Superlattices and Microstructures, Vol.1,No.2, pp.177-182 (1985). |
| 1984 | Optical and electrical properties of PbTe-Pb1-ｘSnｘTe superlattices prepared on KCl by a HWE (H.Fujiyasu, A.Ishida, H.Kuwabara, S.Shimomura, S.Takaoka, and K.Murase) Surface Science, Vol.142, pp.579-585(1984). |
| 1982 | Optical properties of PbTe-Pb1-xSnxTe superlattices prepared by a hot wall technique (H.Kinoshita, H.Fujiyasu, A.Ishida, and H.Kuwabara) Physics of Narrow Gap Semiconductors (Springer Verlag, Berlin Heidelberg,1982) Vol.152, pp.368-372. |
