Publications

year Title, Authors, Journal
2018 “Fabrication of magneto-optical waveguides inside transparent silica xerogels containing ferrimagnetic Fe₃O₄ nanoparticles”, Seisuke Nakashima, Ryohei Okabe, Koji Sugioka, and Akihiro Ishida, Optics Express 26 (24), 031898 (2018). (10 pages)
2018 ”Thermoelectric properties of PbTe films and PbTe-based superlattices”, Akihiro Ishida, Hoang Thi Xuan Thao, Seisuke Nakashima, Hidenari Yamamoto, and Mamoru Ishikiriyama, Materials Today, Proceedings 5, 10187-194 (2018).
2018 “Interband absorption in PbTe/PbSnTe-based type-II superlattices”, Akihiro Ishida, Kazuma Naruse, Seisuke Nakashima, Yasushi Takano, Shaoqing Du, and Kazuhiko Hirakawa, Appl. Phys. Lett. 113, 072103 (2018)    (Editor’s pick)
2018 “Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates”Peiling Yuan, Ryo Tamaki, Shinya Kusazaki, Nanae Atsumi, Yuya Saito, Yuki Kumazawa, Nazmul Ahsan, Yoshitaka Okada, Akihiro Ishida and Hirokazu Tatsuoka, Jpn. J. Appl. Phys. 57, 04FJ01 (2018). (7 pages)
2017 “PbSrS/PbS mid-infrared short-cavity edge-emitting laser on Si substrate”, Akihiro Ishida and Seisuke Nakashima, Appl. Phys. Lett. 111, 161104 (2017). 
2017 “Thermal conductivity measurement of thermoelectric thin films by a versatility-enhanced 2wmethod”, R. Okuhata, K. Watanabe, S. Ikeuchi, A. Ishida, and Y. Nakamura, J. Electronic Materials 46(5), 3089-3096 (2017).
2016    “Magneto-optical properties of Waveguide Structures Containing Magnetic Nanoparticles using Femtosecond Laser”, Seisuke Nakashima, Ryohei Okabe, Koji Sugioka, and Akihiro Ishida,  Nanotechnology (IEEE Nano), 515-518 (2016).
2016  “Amorphous / Epitaxial Superlattice for Thermoelectric Application”, A. Ishida, H. T. X. Thao, M. Shibata, S. Nakashima, H. Tatsuoka, H. Yamamoto, Y. Kinoshita, M. Ishikiriyama, and Y. Nakamura, Jpn. J. Appl. Phys. 55, 081201 (2016).
2015 “Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity”,Akihiro Ishida, Hoang Thi Xuan Thao, Hidenari Yamamoto, Yohei Kinoshita, and Mamoru Ishikiriyama, AIP Advances 5, 107135 (2015).
2012  “IV-VI mid-infrared VECSEL on Si-substrate”, M. Fill ; F. Felder ; M. Rahim ; A. Khiar ; R. Rodriguez ; H. Zogg ; A. Ishida, SPIE Proc. 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420H (February 9, 2012); 
2012 “Electronic transport for thermoelectric applications on IV-VI semiconductors”, Akihiro Ishida, Yutaro Sugiyama, Hirokazu Tatsuoka, Tomoki Ariga, Mikio Koyano, and Sadao Takaoka, Materials transactions Special Issue on Thermoelectric Conversion materials VII online published May 9, 2012 .
2011 “2W high efficiency PbS mid-infrared surface emitting laser”, A. Ishida, Y. Sugiyama, Y. Isaji, K. Kodama, Y. Takano, H. Sakata, M. Rahim, A. Khiar, M. Fill, F. Felder, and H. Zogg, Appl. Phys. Lett. 99, 121109 (2011). 
2011 “Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si”, A. Khiar, M. Rahim, M. Fill, F. Felder, H. Zogg, D. Cao, S. Kobayashi, T. Yokoyama, and A. Ishida, J. Appl. Phys. 110, 023101 (2011).
2011  “Thermomagnetic Effects in High-Mobility PbTe Films”, Tomoki Ariga, Mikio Koyano and Akihiro Ishida, Journal of Electronic Materials 40 (5), 687-690,2011.
2011 ”Seebeck Effects and Electronic Thermal Conductivity of IV-VI Materials”, A. Ishida, T. Yamada, T. Nakano, Y. Takano, and S. Takaoka, Jpn. J. Appl. Phys. 50, 031302 (2011). 
2010  “Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers” Q. Yang, Y. Saeki, S. Izumi, T. Nukui, A. Takeuchi, A. Ishida, H. Tatsuoka, Applied Surface Sci. 256, pp6928-6931 (2010).
2010 ”Electrical and optical properties of SnEuTe and SnSrTe films”, A.Ishida, T. Tsuchiya, T. Yamada, D. Cao, S. Takaoka, M. Rahim, F. Felder, and H. Zogg. J. Appl. Phys. 107(12), 123708 (2010).
2010  “Semimetallic properties of SnTe/PbSe type-II superlattices” Akihiro Ishida, Tomohiro Yamada, Takuro Tsuchiya, Yoku Inoue, Takuji Kita, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems Volume 3, Issue 2, Pages 1103-1378 (31 January 2010)
2009 ”PbTe/PbS Multilayer Mirror for EuTe/PbTe Surface Emitting Quantum Cascade Lasers”, Daoche Cao, Taiki Yamano, Yoku Inoue, and Akihiro Ishida, 電気学会論文誌A, Vol.129, No.11, 799-801 (2009).
2009  “Electrical and thermoelectrical properties of SnTe-based films and superlattices”, A.Ishida, T.Yamada, T.Tsuchiya, Y.Inoue, S.Takaoka, and T.Kita, Appl. Phys. Lett. 95, 112106 (2009).
2009 “Seebeck effect in PbTe films and EuTe/PbTe superlattices”, A. Ishida, T. Yamada, D. Cao, Y. Inoue, M. Veis, and T. Kita, J. Appl. Phys. 106(2),023718(2009).
2009 “Seebeck Coefficient of Ultrathin Silicon-on-Insulator layers” Faiz Salleh, Kiyosumi Asai, Akihiro Ishida, and Hiroya Ikeda, Applied Physics Express, 2,071213(2009). 
2009 “Seebeck Effect in IV–VI Semiconductor Films and Quantum Wells”,
Akihiro Ishida, Daoshe Cao, Sinsuke Morioka, Yoku Inoue and Takuji Kita, Published online in Journal of Electronic materials 38(7), pp.940-943 (2009). 
2008 “Morphology control of GaN nanowires by Vapour-liquid-solid growth” Y.Inoue, A.Tajima, A.Ishida, and H.Mimura, Phys. Stat. Sol. © 5, No.9, 3001-3003 (2008).
2008  “Growth and density control of GaN nanodots and nanopillars”, S.Takeda, Y.Inoue, A.Ishida, and H.Mimura, Phys. Stat. Sol. (c), 5, No.9, 3008-3010 (2008).
2008 “Size control of Fe nanoparticles for carbon nanotube growth using carbonyl iron vapour” K.Ohara, Y.Neo, H.Mimura, Y.Inoue, and A.Ishida, Phys. Stat. Sol. (c), 5, No.9, 3169-3171 (2008).
2008 “One-step growth aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition”, Y. Inoue, K. Kakihata, Y. Hirono, T. Horie, A. Ishida, and H. Mimura, Appl. Phys. Lett. 92, 213113 (2008).
2008 “Enhanced Seebeck coefficient in EuTe/PbTe [100] short-period superlattices”, A. Ishida, D. Cao, S. Morioka, M. Martin, Y. Inoue, and Y. Kita, Appl. Phys. Lett. Vol. 92, pp.182105 (2008).
2008  “AlN/GaN superlattice quality improvement by using multiple superlattice structure”, M. Veis, K. Hagihara, S. Nakagawa, Y. Inoue and A. Ishida, Physica status solidi (c), Vol 5, pp. 1547-1549 (2008).
2007 ”Strong Intersubband Absorption in EuTe/PbTe Double-Well Superlattices at Normal Incidence”, Akihiro ISHIDA, Martin VEIS, and Yoku INOUE, Jap. J. Appl. Phys. .Vol.46 (2007) No.13  pp.L281 – L283.
2007 “Growth and field emission of GaN nanowires grown by metal organic chemical vapor deposition”, Y. Inoue, A. Tajima, S. Takeda, A. Ishida, H. Mimura, and S. Sakakibara, Phys. Stat. Sol. (c) 4, 2366-2370 (2007).
2005 “Zn3N2 compensated ZnTe films and ZnTe/ZnSe superlattices grown by hot wall epitaxy”, S. Sakakibara, Y. Inoue, H. Mimura, K. Ishino, A. Ishida and H. Fujiyasu, Applied Surface Science, 244, pp.343-346 (2005).
2005 Design and preparation of AlN/GaN quantum wells for quantum cascade laser application (A.Ishida, K.Matsue, Y.Inoue, H.Fujiyasu, H.J.Ko, A.Setiawan, J.J.Kim, H.Makino, and T.Yao) Jpn. J.Appl.Phys. 44(8), pp.5918-5922 (2005). 
2005 Growth of Pillarlike GaN Nanostructures (S.Takeda, K.Ishino, Y.Inoue, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi and S.Sakakibara) Jpn. J. Appl. Phys. 44(7B), pp.5664-5666 (2005).
2005 エンベロップ関数近似による量子カスケ-ド構造の設計(石田明広)日本赤外線学会誌Vol.14(2) pp.83-86 (2005).
2005 “Resonant-tunneling electron emitter in AlN/GaN system”, A.Ishida, K.Matsue, Y.Inoue, and H.Fujiyasu, Appl.Phys.Lett. 86, pp.183102 (2005).  
2004 “Cathodeluminescence of polycrystalline GaN grown by a hot wall epitaxy technique”,  Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, H. Fujiyasu, H.Kominami, H. Mimura, Y. Nakanishi, S. Sakakibara, Phys. Stat. Sol. (b) 241, No.12, pp.2717-2721(2004).
2004 Strong luminescence from dislocation-free GaN nanopillars (Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, and Y.Nakanishi) Appl.Phys.Lett. 85(12), pp.2340-2342 (2004).  
2004 Fabrication and characterization of short period AlN/GaN quantum cascade laser structures (Y.Inoue, H. Nagasawa, N. Sone, K. Ishino, A. Ishida, H. Fujiyasu, J. J. Kim, H. Makino, T. Yao, S. Sakakibara, M. Kuwabara) J.Cryst. Growth 265,65-70(2004).
2004  [(AlN)1/(GaN)n1]/(AlN)n2-based quantum wells for quantum cascade-laser application (A.Ishida, Y.Inoue, H.Nagasawa, N.Sone, K.Ishino, J.J.Kim, H.Makino,, T.Yao, H.Kan, H.Fujiyasu) Physica E 21 pp.765-769(2004).
2002 Characterization of AlN/GaN Quantum-Cascade Structures Prepared by Hot-Wall Epitaxy(A.Ishida, T.Ose, H.Nagasawa, Y. Inoue, and H.Fujiyasu, H.Makino and T.Yao) Physica Status Solidi (c) Vol.0, pp520-523(2002).
2002 AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectiors Utilizing polarization Fields (A.Ishida, Y.Inoue, M.Kuwabara, H.Kan, and H.Fujiyasu) Jpn.J.Appl.Phys. Vol.41, pp.L1303-L1305(2002).
2002 PbSnCaTe films and PbSnCaTe/PbSnTe superlattices prepared by molecular-beam epitaxy (A.Ishida, T.Ohashi, S.Wang, T. Tsuchiya, K. Ishino, Y. Inoue, H. Kan and H. Fujiyasu) Jpn.J.Appl.Phys.Vol.41, pp.3655-3567(2002).
2002 AlN/GaN Short-Period Superlattices with Monolayer AlN for Optical-Device Applications (A.Ishida, M.Kitano, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu, H.Kan, H.Makino , and T.Yao) Physica E, Vol.13, pp.1098-1101(2002).
2002 Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect (A.Ishida, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue and H.Fujiyasu) Jpn.J.Appl.Phys. Part2, Vol.41, No.3A, pp.L236-238(2002).
2000 Conductivity atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source (F.Iwata, S.Chu, A.Sasaki, K.Ishino, A.Ishida, and H.Fujiyasu)J.Appl.Phys.88, pp.1670-1673(2000).
1999 “Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering”, H. Harima, E. Kurimoto,Y. Sone, S. Nakashima, S. Chu, A. Ishida, and H. Fujiyasu, Physica Status Solidi b 216, Issue 1, November 1999, pp 785–788(1999).
1999 Terahertz emission spectroscopy of coherent phonons in semiconductors(Masahiko Tani, Ryoichi Fukasawa, Michael Herrmann, Kiyomi Sakai, Shin-ichi Nakashima, Nobuya Yoshioka, Akihiro Ishida, and Hiroshi Fujiyasu )Proc. SPIE 3624, 109 (1999)
1999 GaN and InGaN prepared by hot wall beam epitaxy(S.Sakakibara, F.Tanoue, M.Ohbora, M.Kaneko, T.Nakayama, K.Ishino, A.Ishida, H.Fujiyasu) Appl.Surf.Sci.Vol.142, pp.362-366 (1999). (30) Growth and characterization of hot-wall epitaxal InGaN films using mixed (Ga+In) source (S.Chen, T.Saisho, K.Fujimura, S.Sakakibara, F.Tanoue, K.Ishino, A.Ishida, H.Harima, Y.Oka, K.K.Takahiro, Y.Chen, T.Yao, and H.Fujiyasu) Jpn.J.Appl.Phys. 38, 4973-4979(1999).
1999 PbCaTe films and PbCaTe/PbTe superlattices prepared by hot wall epitaxy (A.Ishida, T.Tsuchiya, N.Yoshioka, K.Ishino, and H.Fujiyasu)Jpn.J.Appl.Phys. Vol.38, pp.4652-4655 (1999).
1999 High quality InGaN films grown by hot-wall epitaxy with mixed (Ga+In) source (S.Chu, T.Saisho, K.Fujimura, S.Sakakibara, F.Tanoue, K.Ishino, A.Ishida, and H.Harima, Y.Chen, T.Yao, and H.Fujiyasu) Jpn.J.Appl.Phys 38, L427-429(1999).
1999 Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxy (A.Ishida, K.Matsuda, S.Chu, F.Tanoue, S.Sakakibara, K.Ishino, S.Fuke, and H.Fujiyasu) Materials Science & Engineering B59, pp.230-234(1999).
1998 Preparation of GaN films of low carrier density by HWE system with Ga and TMG sources (S.Chu, K.Fujimura, D.Suzuki, S.Sakakibara, F.Tanoue, A.Ishida, K.Ishino, K.Aiki, H.Fujiyasu) J.Cryst.Growth 189/190, 340(1998).
1998 Growth of GaN and InGaN prepared by hot wall beam epitaxy system with NH3 (F.Tanoue, S.Sakakibara, M.Ohbora, K.Ishino, A.Ishida, and H.Fujiyasu) J.Cryst.189/190,47(1998).
1996 Study of Some dd transition of Mn in Strained layer ZnS-CdS(Se):Mn Superlattices (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.H iyoshi, S.Sakakibara)Inorganic and Organic Electroluminescence, pp.61-64(1996).
1996 Properties of Manganese Doped Electroluminescent Devices of ZnCdSSeTe Superlattices Systems (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.Hiyoshi, S.Sakakibara) Inorganic and Organic Electroluminescence, pp.169-172(1996). 
1996 Properties of Cerium Doped Electroluminescent Devices of SrS/ZnS Multiple Layers (H.Haruhana, K.Miyashita, K.Ito,T.Kiichi, A.Sato, A.Ishida, K.Ishino, H.Fujiyasu, T.Hiyoshi, S.Sakakibara) Inorganic and Organic Electroluminescence pp.295-298(1996).
1995 Vapor phase growth of HgTe and HgCdTe films under controlled mercury pressure (H.Kuwabara, H.Tatsuoka, A.Ishida, H.Fujiyasu, Y.Nakanishi, M.Nakayama) J.Crystal Growth 159, pp.839 (1995).
1995 Growth of GaN films by hot wall epitaxy(A.Ishida, E.Yamamoto, K.Ishino,K.Ito, H.Fujiyasu, and Y.Nakanishi) Appl.Phys.Lett.Vol.67,No.5, pp.665-666(1995). 
1994 PbMgSrTe and PbSrTeSe films prepared by hot wall epitaxy ( N.Sakurai, K.Matsushita, H.Fujiyasu, and A.Ishida) Jpn.J.Appl.Phys. Vol.33, Part 1, pp.6486-6490 (1994). 
1994 量子井戸・多層構造EL素子(藤安 洋、疋田京子、石田明広)ディスプレイ&イメ-ジング Vol.3,pp.215-223,(1994). 
1994 HgTe and HgCdTe vapor phase growth under controlled Hg pressure (H.Kuwabara, H.Tatsuoka, Y.Nakanishi, A.Ishida, H.Fujiyasu, M.Nakayama, and T.Yamanashi) J. Crystal Growth Vol.138,pp.964-969(1994).
1994 PbSrS MQW lasers and the effect of quantum well on operation temperature (A.Ishida,N.Sakurai,N.Aikawa, and H.Fujiyasu) Solid-State Electronics Vol.37, Nos.4-6, pp.1141-1144(1994).
1994 Lead-strontium-telluride films and lasers prepared by hot wall epitaxy (N.Sakurai, H.Fujiyasu, and A.Ishida) Jpn.J.Appl.Phys.Vol.33, Part 1,No.1A, pp.151-154(1994).
1994 PbSrS lasers prepared by hot wall epitaxy (A.Ishida,H.Takashiba, T.Izutsu H.Fujiyasu, and H.Böttner) J.Appl.Phys.75(1),619-620(1994).
1994 Characteristics of Chlorine-doped ZnSe films and ZnSe-ZnS superlattices grown by hot wall epitaxy (S.Sakakibara, K.Fujimoto, N.Amano, K.Ishino, A.Ishida, H.Fujiyasu) Jpn. J. Appl. Phys. Vol.33, Part 1, No.4A, pp.2008-2014 (1994).
1993 (51) Red Electroluminescent Devices Using Mn-doped CdS(Se)- and CdTe-ZnS Superlattices (K.Hikida,K.Ishino,A.Ishida,T.Kiichi,and H.Fujiyasu) Jpn. J. Appl. Phys. Vol.32, 506-508 (1993).
1993 Characterization of Nitrogen-doped ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy(S.Sakakibara,N.Amano,K.Ishino, A.Ishida, and H.Fujiyasu) Jpn. J. Appl. Phys. Vol.32, Part 1,No.10, pp.4703-4708 (1993).
1993 Preparation of II-VI compound films and superlattices by hot wall epitaxy and their applications to light emitting devices (H.Fujiyasu and A.Ishida) New Functionally Materials Vol.A, 203-209(1993).
1993 Red-yellow CdSSe-ZnS, and blue-green SrS and CdSSe-SrS superlattice double insulating EL devices by hot wall epitaxy(H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino, and A.Ishida) Appl.Surf.Sci.Vol.65/66,455-460(1993).
1993 Preparation of CdSSe-ZnS, and SrS and CdSSe-SrS superlattices by hot wall epitaxy and their applications to electroluminescence devices (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino, and A.Ishida) J.Electronic Materials Vol.22,No.5,pp.545 (1993). 
1993 Double heterostructure Pb1-xSrxS/Pb1-ySryS lasers prepared by hotwall epitaxy (S.Mohammadnejad, K.Aikawa, A.Ishida, and H.Fujiyasu) Jpn.J.Appl.Phys.Vol.32,part 1,No.4,pp.1658-1660(1993).
1992 ホットウォ-ル法によるSrS:Ce薄膜とCdSSe-ZnS超格子とそのEL素子への応用(竹内要二、増尾浩樹、田中貴久、後藤佳彦、石野健英、石田明広、藤安洋)真空、35、787-793(1992).
1992 CdSSe:Mn-ZnS超格子による赤色EL素子(竹内要二、疋田京子、中村高遠、石野健英、石田明広、藤安洋)真空、35、781-786(1992).
1992 ZnS:Mn Electroluminescent Films prepared by Hot Wall Technique (Y.Takeuchi,Y.Okuno, T.Nakamura, K.Ishino, A.Ishida, and H.Fujiyasu) Jpn.J.Appl.Phys.31,1391-1395(1992).
1992 Mn doped ZnS and/or ZnS-CdS superlattice double insulating EL devices by hot wall epitaxy (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino,and A.Ishida) J.Cryst.Growth, 117,1026-1029(1992).
1992 Growth of Pb1-x-yCdxSryS films and SLs by hot wall epitaxy for 3 um lasers, and their electrical properties (S.Mohammadnejad, K.Matsushita, T.Izutsu, A.Ishida, and H.Fujiyasu) Jpn. J.Appl.Phys.31,3951-3956(1992).
1992 Photoconductive properties of PbSrS/PbSnS superlattices (A.Ishida, K.Matsushita, T.Sugimoto, H.Akimoto, S.Mohammadnejad and H.Fujiyasu)Surface Science Vol.267, 149-152(1992).
1992 Mn doped ZnS and/or ZnS-CdS superlattice double insulating EL devices by hot wall epitaxy (H.Fujiyasu, Y.Takeuchi, K.Hikida, K.Ishino,and A.Ishida) J.Cryst.Growth, 117,1026-1029(1992).
1990 Transmission spectra of substrate-free ZnTe-ZnSe superlattices (H.Yang, A.Ishida, and H.Fujiyasu) Appl.Phys.Lett. 56(21), 2114-2116(1990).
1990 Structure analysis of ZnTe-ZnSe strained layer superlattices by transmission electron microscopy observation (H.Yang, Y.Takenaka,A.Ishida, and H.Fujiyasu) J.Appl. Phys. 68 (4),1606-1609(1990).
1990 X-ray [440] diffraction of the strained-layer superlattices grown on GaAs (001) substrates (H.Yang, A.Ishida, and H.Fujiyasu) J.Appl.Phys. 68 (1),112-115(1990).
1990 Monolithic photovoltaic PbS on Si infrared array (J.Masek,A.Ishida, H.Zogg, C.Maissen, and S.Blunier), IEEE Electron Device Lett. Vol.11, 12-14 (1990).
1990 Laser application of Pb1-xSrxS films prepared by hot wall epitaxy (A.Ishida, K.Muramatsu, K.Ishino, and H.Fujiyasu) J. Semicon. Sci. Tech. 5, S334-S337 (1990).
1989 Pb1-xSrxS/PbS double heterostructure lasers prepared by hot wall epitaxy (A.Ishida, K.Muramatsu, H.Takashiba, and H.Fujiyasu) Appl.Phys.Lett. Vol.55, 430-431(1989).
1989  Interband transitions of ZnTe-ZnSe superlattices prepared on GaAs(100) by hot wall epitaxy (H.Yang, A.Ishida, H.Fujiyasu, and H.Kuwabara) J. Appl. Phys. Vol.65, 2838-2842 (1989). 
1989 High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (Y.H.Wu, H.Yang, A.Ishida, H.Fujiyasu,S.Nakashima, and K.Tahara) Appl. Phys. Lett.Vol.54, 239-241 (1989).
1990 Barrier layer thickness dependence of electronic subband structures in PbTe/Pb1-xSnxTe superlattices (S.Shimomura, Y.Urakawa,T.Takaoka, K.Murase, A.Ishida, and H.Fujiyasu) Superlattices and Microstructures Vol.7,5-11(1990).
1989 Lead-europium-chalcogenide films and superlattices for 3 mm laser (A.Ishida, Y.Sase, N.Nakahara, T.Okamura, and H.Fujiyasu) Superlattices and Microstructures Vol.6, 27-30 (1989).
1988 Optical properties of PbTe/Pb1-xEuxTe superlattices prepared by hot wall epitaxy (A.Ishida, Y.Sase, and H.Fujiyasu) Applied Surface Sciences Vol.33&34, 868-874(1988).
1988 Properties of CdS-ZnS superlattices prepared by hot wall epitaxy (H.Fujiyasu, T.Sasaya, M.Katayama, K.Ishino, A.Ishida) Applied Surface Sciences Vol.33&34, 854-861(1988).
1988 Electron spin resonance studies on the superlattices PbTe-Pb1-xEuxTe prepared by hot wall epitaxy (T.Nakamura, A.Ishida, and H.Fujiyasu) Thin Solid Films Vol.161, 149-156 (1988).
1988 Pb1-xEuxS films prepared by hot wall epitaxy (A.Ishida, N.Nakahara,T.Okamura, Y.Sase, and H.Fujiyasu) Appl.Phys.Lett.Vol.53, 274-275(1988).
1988 Properties of Pb1-xEuxTe films prepared by hot-wall epitaxy (A.Ishida, S.Matsuura, M.Mizuno, Y.Sase, and H.Fujiyasu) J.Appl.Phys.Vol.63, 4572-4574(1988).
1988 Photoluminescence Properties of ZnTe-ZnSe superlattices grown by hot wall epitaxy (H.Yang, H.Fujiyasu, Y.Wu, A.Ishida, and H.Kuwabara) J. Luminescence Vol.40&41, 717-718 (1988).
1987 Observation of quantum-size effects in optical transmission spectra of PbTe/Pb1-xEuxTe superlattices (A.Ishida, S.Matsuura, M.Mizuno, and H.Fujiyasu) Appl. Phys. Lett. Vol.51, No.7, pp.478-480(1987).
1986 Properties of PbTe/EuTe short period superlattices and their application to laser diodes (A.Ishida, S.Matsuura, H.Fujiyasu, H.Ebe, and K.Shinohara) Superlattices and Microstructures Vol.2, No.6, pp.575-580 (1986).
1986 An indication of quantum Hall effect in PbTe-Pb1-xSnxTe superlattices (S.Takaoka, F.Nihei, K.Murase, A.Ishida, and H.Fujiyasu)J. Phys. Soc. Japan Vol.55, No.8, pp.2519-2522(1986).
1986 Semimetallic electrical transport in PbTe-SnTe superlattices on KCl substrate (S.Takaoka, T.Okumura, K.Murase, A.Ishida, and H.Fujiyasu) Solid State Communications Vol.58, No.9, pp.3023-3027 (1986).
1986 Lasing Mechanism of type-I’ PbSnTe-PbTeSe multiquantum well laser with doping structure (A.Ishida, H.Fujiyasu, H.Ebe, and K.Shinohara) J. Appl. Phys. Vol.59, No.9, pp.3023 – 3027 (1986).
1985 Burstein-Moss effect of PbTe-Pb1-xSnxTe superlattice (A.Ishida and H.Fujiyasu) Jpn. J. Appl.Phys. Vol.24, pp.L956-L958(1985).
1985 PbSnTe multiple quantum well lasers for pulsed operation at 6mm up to 204K (K.Shinohara, Y.Nisijima, H.Ebe, A.Ishida, and H.Fujiyasu) Appl.Phys.Lett. Vol.47, No.11, pp.1184-1186 (1985).
1986 Superconducting behavior in PbTe-SnTe superlattices (K.Murase, S.Ishida, S.Takaoka, T.Okumura,H.Fujiyasu, A.Ishida, and M.Aoki) Surface Science Vol.170, pp.486-490 (1986).
1985 Semimetallic Hall properties of PbTe-SnTe superlattice (A.Ishida, M.Aoki, and H.Fujiyasu) J. Appl. Phys. Vol.58, No.5, pp.1901-1903 (1985).
1985 Sn diffusion effects on x-ray diffraction patterns of Pb1-xSnxTe-PbSeyTe1-y superlattices (A.Ishida, M.Aoki,and H.Fujiyasu) J.Appl.Phys.Vol.58, No.2, pp.797-801(1985).
1985 On the type of superlattices in Lead-Tin-Telluride system (K.Murase, S.Shimomura, S.Takaoka, A.Ishida, and H.Fujiyasu) Superlattices and Microstructures, Vol.1,No.2, pp.177-182 (1985).
1984 Optical and electrical properties of PbTe-Pb1-xSnxTe superlattices prepared on KCl by a HWE (H.Fujiyasu, A.Ishida, H.Kuwabara, S.Shimomura, S.Takaoka, and K.Murase) Surface Science, Vol.142, pp.579-585(1984).
1982 Optical properties of PbTe-Pb1-xSnxTe superlattices prepared by a hot wall technique (H.Kinoshita, H.Fujiyasu, A.Ishida, and H.Kuwabara) Physics of Narrow Gap Semiconductors (Springer Verlag, Berlin Heidelberg,1982) Vol.152, pp.368-372.