I participated in “IWN 2018” held at Ishikawa prefectural music festival · ANA Crown Plaza Hotel Kaza Kanazawa on November 11 to 16, 2018.
There were three presentations from our laboratory as follows.

[1] Kazushi Ebara, Ken Mochizuki, Yoku Inoue, Toru Aoki, Kazunobu Kojima, Shigefusa F. Chichibu, and Takayuki Nakano, ”Kinetics analysis of desorption process in BGaN MOVPE”, The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR10-5, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, &Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018

[2] Takayuki Maruyama, Yuri Takahashi, Natsuki yamada, Kazushi Ebara, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigefusa F. Chichibu, Yoku Inoue, Toru Aoki, and Takayuki Nakano, “Fabrication and evaluation of thick BGaN neutron detection diodes”, The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR10-4, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018

[3] Kai Matsuhisa, Hirotaka Yagi, Yoku Inoue, and Takayuki N, “Study of double polarity GaN MOVPE with narrow pitch pattern by V/III ratio contro” The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR8-5, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018