We are conducting research on crystal growth of group III nitride semiconductors typified by gallium nitride (GaN) used for blue light emitting diodes (LEDs) and others. By developing crystal growth technology using metalorganic vapor phase epitaxy (MOVPE) method, new semiconductor devices are being fabricated.
Main research theme
- Development of novel optical functional device using polar structure of group III nitride
- Development of Neutron Imaging Sensor Using BGaN
- Analysis of reaction mechanism in BGaN-MOVPE method
Development of optical function device using polar structure
Group III nitrides with wurtzite crystal structure are asymmetric in the c-axis direction and therefore have polarity, and their chemical stability and nonlinear optical constants are different depending on polarity.
Utilizing these features, we are working on the development of nonlinear optical devices such as ultraviolet imaging sensors and SHG by controlling polarity by crystal growth technology.
Development of Neutron Imaging Sensor Using BGaN
We focus on B atoms with large neutron capture cross section and aim at realization of neutron imaging sensor by making BGaN semiconductor crystal. For high sensitivity BGaN crystal production, we are developing high B composition and thick film growth crystal technology.
Analysis of reaction mechanism in BGaN-MOVPE method
BGaN is expected to be applied to neutron imaging sensors, ultraviolet light emitting devices, power devices, and so on. We analyze the chemical reaction mechanism in the MOVPE method which is crystal growth technology such as GaN, and aim for breakthrough to develop high quality BGaN crystal growth technology and realize BGaN device.
- Metallic Organic Vapor Phase Epitaxy for Group III Nitride (MOVPE) Equipment (ULVAC)
- Organometallic vapor phase epitaxy (MOVPE) equipment for group III nitrides (manufactured by Taiyo Nippon Sanso)
- HVPE equipment for group III nitrides (self made)
- Magnetron sputtering equipment (ANELVA)
- Vacuum vapor deposition equipment (ULVAC)
- Low temperature photoluminescence (PL) measuring device
- Spectroscopic ellipsometry device (JASCO Corporation)
- Atomic force microscope (AFM)
- Radiation multichannel analyzer (manufactured by Anseen)