International
[1] Takayuki Nakano, Masatomo Sumiya, and Shunro Fuke; “The research of the crystal growth technology which controlled the polarity of GaN”, UK-Japan Workshop on Photonics and Bio-Medical Engineering,15-Dec-10, Birmingham, UK, December 15-17, 2010 (Invited talk)
[2] Toru Aoki, Akifumi Koike, Takaharu Okunoyama, Toshitaka Yamakawa, Takayuki Nakano, and Hidenori Mimura; “Advanced X-ray / neutron imaging with photon counting imager”, UK-Japan Workshop on Photonics and Bio-Medical Engineering”,15-Dec-8, Birmingham, UK, December 15-17, 2010, (Invited talk)
[3] Takayuki Nakano, Masatomo Sumiya, and Shunro Fuke; “Growth and Properties of ZnO films grown using PA-MOVPE with DMZn”, 11th International Young Scientists Conference “Optics & High Technology Material Science –SPO 2010”, I-11, Kyiv, Ukraine, 21st to 24th October, 2010, (Invited talk)
[4] Tsuyoshi Tachi, Tsutomu Nogi, Takayuki Nakano, Masatomo Sumiya, Tokuaki Nihashi, Minoru Hagino and Shunro Fuke; “Fabrication of Polarity Inversion of GaN by using Mg-doping in MOVPE”, International Workshop on Nitride Semiconductors 2010 (IWN2010), AP1.54, Tampa, Florida, USA, September 19-24, 2010
[5] Takayuki Nakano, Masateru Hamada and Shunro Fuke, “Fabrication and analysis of photocatalyst group-III nitride powder”, 9th International Conference on Global Research and ducation (inter-academia2010, iA2010), Tue-10, Riga, Latvia, August 9-12, 2010
[6] Takahiro Nishida, Shailendra Singh, Aki Miyake, Hisashi Morii, Takayuki Nakano and Toru Aoki, “thermal neutron detection by CdTe detector”, 9th International Conference on Global Research and ducation (inter-academia2010, iA2010), Wen-P, Riga, Latvia, August 9-12, 2010
Domestic
[1] 西岡孝浩，金子寿，三宅亜紀，シン シャイレンドラ，森井久志，中野貴之，根尾陽一郎，三村秀典，青木徹，“GdGaN半導体を用いた中性子検出”， 第58回応用物理学関係連合講演会，27a-EA-7，神奈川工科大学，2011年3月27日
[2] 中野貴之，”GaN結晶成長技術による光機能デバイスの開発”，静岡大学・重点分野「極限画像科学」シンポジウム，静岡大学浜松キャンパス、2011年3月14日
[3] Tsuyoshi Tachi, Tsutomu Nogi, Takayuki Nakano, Masatomo Sumiya, Tokuaki Nihashi, Minoru Hagino and Shunro Fuke; “Fabrication of polarity inversion structure of GaN by using Mg-dope in MOVPE”, 29th Electronic Materials Symposium (EMS29), Fr1-6, ラフォーレ修善寺, July 14-16, 2010
[4] 舘毅、岩瀬賢俊、野木努、中野貴之、角谷正友、二橋得明、萩野實、福家俊郎、”MOVPE法を用いたGaN極性反転構造の作製”、応用物理学会東海支部第17回基礎セミナー、P-05、静岡大学、2010年10月20日
[5] 舘毅、野木努、中野貴之、角谷正友、二橋得明、萩野實、福家俊郎、”MOVPE法を用いた高MgドープによるGaN極性反転構造の作製”、第71回応用物理学会学術講演会、15p-C-5、長崎大学、2010年9月14-17日