Oral Presentation
Afiff Adnan Fatahillah, Prabhudesai Gaurang Pramod, and Kensuke Yamaguchi gave their oral presentations in this conference on the topics below:
A. Afiff, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru:
“Effect of tunnel resistance modulation on single-electron tunneling in selectively-doped Si nano-transistors”
G, Prabhudesai, M. Manoharan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, D. Moraru:
“Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes”
K. Yamaguchi, M. Muruganathan, H.Mizuta, M. Tabe, D. Moraru:
第一原理計算を用いた外部電場によるSiナノ構造上の不純物への影響
(“First-principle study of the effect of external electric field on dopants in Si nano-structures”)
(Mar. 11th, 2019, Ookayama Campus, Tokyo Institute of Technology – Tokyo)
Attendees from our lab.(KY, GP, DM, AF)
Picture with Manoharan-sensei(JAIST) at Tokyo Tech