- P. Yadav, S. Chakraborty, D. Moraru, and A. Samanta, ”Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors”
Nanomaterials (MDPI), 2022, 12, 4437-1-22
(Special Issue on “Novel Materials with Target Functionalities”).[DOI]
- R. S. Singh, K. Takagi, T. Aoki, J.-H. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru, “Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform” Materials 15 (14), 4935 (July 2022). [DOI]
- T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, and D. Moraru, Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
Applied Physics Express 15, pp. 065003_1-4, May (2022).[DOI]
- M. Anwar, T. E. Saraswati, L. Anjarwati, D. Moraru, A. Udhiarto, F. Adriyanto, H. Maghfiroh, and R. Nuryadi, Probing ionization characteristics of under-water plasma arc discharge
using simultaneous current and voltage versus time measurement in carbon
nanoparticle synthesis
Micro and Nano Engineering 14, pp.100099_1-7, December (2021).[DOI]
- C. Pandy, G. Prabhudesai, K. Yamaguchi, V N Ramakrishnan, Y. Neo, H. Mimura, and D. Moraru, Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
Applied Physics Express 14, pp.055002_1- 6, April (2021). [DOI]
- A. Udhiarto, R. Nuryadi, M. Anwar, G. Prabhudesai, and D. Moraru,
Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices
Jpn. J. Appl. Phys.60, 024001_1-7, January (2021). [DOI]
- A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. ONO, M. Tabe, and D. Moraru,
Coulomb-blockade transport in selectively-doped Si nano-transistors
Applied Physics Express 12, 085004 (2019).[DOI]
- G. Prabhudesai, M. Muruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, and D. Moraru
Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes
Applied Physics Letter Vol.114,Issue 243502,pp.243502-1-5, June (2019). [DOI]
- H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara, Y.Ono
Electron aspirator using electron-electron scattering in nanoscale silicon
Nature Communications. Vol.9, December (2018) pp.4813_1-8. [DOI]
- H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara, and Y.Ono
Detection of single holes generated by impact ionization in silicon
Appl.Phys.Lett. Vol.113,Issue 16, pp.163103_1-5, October (2018).[DOI]
- T. Momose, A. Nakamura, D. Moraru, and M. Shimomura
Phosphorus doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film
AIP Advances, vol. 8, no. 2, pp. 025009_1-8, February (2018).[DOI]
- A. Afiff, T. Hasan, A. Udhiarto, H. Sudibyo, D. Hartanto, A. Samanta, M. Muruganathan, H. Mizuta, M. Tabe, and D. Moraru
A statistical study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors
IEEE Xplore (2017 15th International Conference on Quality in Research, QiR: International Symposium on Electrical and Computer Engineering), pp. 74-78 , December (2017).[DOI]
- A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe and D. Moraru
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Appl. Phys. Lett., vol. 110, no. 9, pp. 093107_1-5, May (2017).[DOI]
- D. Moraru, M. Muruganathan, L. T. Anh, R. Nuryadi, H. Mizuta and M. Tabe
Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes
Recent Global Research and Education:Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp.95-101 (2016).[DOI]
- M. Tabe, A. Samanta and D. Moraru
Toward Room Temperature Operation of Dopant Atom Transistors
Recent Global Research and Education:Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp.83-88 (2016).[DOI]
- M. Tabe, H. N. Tan, T. Mizuno, M. Muruganathan, L. T. Anh, H. Mizuta, R. Nuryadi, and D. Moraru, Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes, Appl. Phys. Lett., vol. 108, no. 9, pp. 093502-1-5 (2016).[DOI]
- A.A.N. Gde Sapteka, H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, and H. Sudibyo, Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement, International Journal of Technology, vol. 6, No. 3, pp. 318-326 (2015)/indexed in SCOPUS.[DOI]
- D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Physics of strongly-coupled dopant-atoms in nanodevices, International Journal of Technology, vol. 6, no. 6, pp. 1057-1064 (2015)/indexed in SCOPUS.[DOI]
- A. Samanta, D. Moraru, T. Mizuno, and M. Tabe, Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors, Scientific Reports, vol. 5, pp. 17377-1-10 (2015).[DOI]
- D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Tunneling in systems of coupled dopant-atoms in Si nanodevices, Nanoscale Research Letters (Nano Review), vol. 10, pp. 372-1-10 (2015).[DOI]
- M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, and T. Mizuno, Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes, ECS Transactions, vol. 69, No. 10, pp. 189-195 (2015) (ULSI Process Integration 9 issue).[DOI]
- K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors, Appl. Phys. Express, vol. 8, pp. 094202_1-4 (2015).[DOI]
- K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy, J. Appl. Phys., vol. 117, no. 24, pp. 244307-1-6 (2015).[DOI]
- K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel, Advanced Materials Research, vol. 1117, pp. 82-85 (2015).[DOI]
- D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe, Tunneling transport in quantum dots formed by coupled dopant atoms, Advanced Materials Research, vol. 1117, pp. 78-81 (2015).[DOI]
Previous Work
- L.T.Anh, D. Moraru, M. Manoharan, M. Tabe ,and H. Mizuta,The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures ,Journal of Applied Physics vol.116,no. pp.063705-1 -063705-9(2014).[DOI]
- D. Moraru,A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe,Transport spectroscopy of coupled donors in silicon nano-transistors, Scientific Reports ,vol.4,pp.6219-1-6219-6 (2014).[DOI]
- S. Purwiyanti,A. Udhiarto, D. Moraru, T. Mizuno, D. Hartanto, and M. Tabe, Observation of tunneling effects in lateral nanowire pn junctions, Makara Journal of Technology ,vol.18,no.2,pp. 91-95 (2014).[DOI]
- R. Nowak,D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy, Thin Solid Films ,vol.557,pp. 249-253 (2014).[DOI]
- D. Moraru,S. Purwiyanti, R. Nowak, T. Mizuno, A. Udhiarto, D. Hartanto, R. Jablonski,and M. Tabe, Individuality of dopants in silicon nano-pn junctions, Materials Science,vol. 20,no.2,pp. 129-131 (2014).[DOI]
- D. Moraru,E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta,and M. Tabe, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs,
Transactions of the Materials Research Society of Japan,vol. 38,no.2,pp.261-264 (2013).[DOI]
- M. Tabe,D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta, Dopant-atom-based tunnel SOI-MOSFETs, ECS Transactions,vol.58,no.9,pp. 89-95 (2013).[DOI]
- S. Purwiyanti,R. Nowak, D. Moraru, T. Mizuno, D. Hartanto, R. Jablonski,and M. Tabe, Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes, Applied Physics Letters,vol. 103,no.24,pp. 243102-1-243102-4 (2013).[DOI]
- A. Udhiarto,S. Purwiyanti, D. Moraru, T. Mizuno,and M. Tabe, Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction, Makara Journal of Technology ,vol.17,no.2,pp. 64-68 (2013).[DOI]
- R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe, Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope,Applied Physics Letters,vol.102,no.8(2013).[DOI]
- E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe, Electron-tunneling operation of single-donor-atom transistors at elevated temperatures,Physical Review B,vol.87,no.8(2013). [DOI]
- A. Udhiarto,D. Moraru,S. Purwiyanti,Y. Kuzuya,T. Mizuno,H. Mizuta,M. Tabe, Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions, Applied Physics Express,vol.5,pp.112201-1-112201-3(2012).[DOI]
- R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe, Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique, Journal of Advanced Research in Physics, vol.3,no.2,pp.021202-1-021202-3(2012).
- M. Tabe,D. Moraru,A. Udhiarto,T. Mizuno, Silicon nanodevices using a few dopant atoms – device characteristics and photon sensing function -,Oyo Butsuri, vol.81.no2,pp.147-150(2012).
- M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,Y. Kuzuya,T. Mizuno,
Effect of donor-level deepening in nm-scale Si SOI-MOSFETs,Journal of Advanced Research in Physics,vol.2.no.1,pp.011111-1-011111-3(2011).[DOI]
- D. Moraru,E. Hamid,A. Udhiarto,T. Mizuno,M. Tabe,
Temperature evolution of electron transporvot in single-donor transistors, Journal of Advanced Research in Physics, vol.2.no.1.pp.011112-1-011112-3(2011).
- M. Anwar,R. Nowak,D. Moraru,A. Udhiarto,T. Mizuno,R. Jablonski,M. Tabe,
Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy,Applied Physics Letters,vol.99,no.21(2011).[DOI]
- A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe,
Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors,Applied Physics Letters,vol.99,no.11(2011).[DOI]
- M.Anwar,Y. Kawai,D. Moraru,R. Nowak,R. Jablonski,T. Mizuno,M. Tabe
Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope,Japanese Journal of Applied Physics,vol.50,no.4(2011). [DOI]
- D.Moraru,A. Udhiarto,M. Anwar,R. Nowak,R. Jablonski,E. Hamid,J. C. Tarido,T. Mizuno,M. Tabe
Atom devices based on single dopants in silicon nanostructures,Nanoscale Research Letters,vol.6(2011) [DOI]
- D.Moraru,E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe,
Memory effects based on dopant atoms in nano-FETs,Advanced Materials Research,vol.222(2011) [DOI]
- M.Tabe,D. Moraru,A. Udhiarto,S. Miki,M. Anwar,Y. Kawai,T. Mizuno,
Si-based single-dopant atom devices,Advanced Materials Research,vol.222(2011) [DOI]
- M.Tabe,A. Udhiarto,D. Moraru,T. Mizuno,
Single-photon detection by Si single-electron FETs, Physica Status Solidi A,vol.203,no.3(2011) [DOI]
- D.Moraru,K. Yokoi,R. Nakamura,S. Miki,T. Mizuno,M. Tabe,
Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs, Key Engineering Materials,vol.470,(2011) [DOI]
- M.Anwar,D. Moraru,Y. Kawai,M. Ligowski,T. Mizuno,R. Jablonski,M. Tabe,
KFM observation of electron charging and discharging in phosphorus-doped SOI channel,Key Engineering Materials,vol.470,(2011) [DOI]
- E.Hamid,D. Moraru,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe,
Single-electron transfer between two donors in thin nanoscale silicon-on-insulator field-effect transistors,Applied Physics Letters,vol.97,no.26(2010) [DOI]
- K.Yokoi,D. Moraru, T. Mizuno, and M. Tabe,
Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays,Journal of Applied Physics,vol.108,no.5(2010) [DOI]
- M.Tabe,D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno,Single-electron transport through single dopants in a dopant-rich environment,Physical Review Letters,vol.105,no.1(2010) [DOI]
- M.Tabe,D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno,
Observation of discrete dopant potential and its application to Si single-electron devices,Thin Solid Films,vol.518,no.6(2010) [DOI]
- M.Tabe,D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno,
Breakthrough of advanced nano-silicon devices,Indonesian Nanoletter,vol.3,no.1(2010)
- M.Ligowski,D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski,
Detection of individual dopants in single-electron devices – a study by KFM observation and simulation,Journal of Automation, Mobile Robotics & Intelligent Systems,vol.3,no.4(2009) [DOI
- D.Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe
Single-electron transport characteristics in quantum dot arrays due to ionized dopants,Journal of Automation, Mobile Robotics & Intelligent Systems,vol.3,no4(2009) [DOI]
- D.Moraru,M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe,
Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors, Applied Physics Express,vol.2,no.7(2009) [DOI]
- K.Yokoi,D. Moraru, M. Ligowski, and M. Tabe,
Single-gated single-electron transfer in non-uniform arrays of quantum dots,Japanese Journal of Applied Physics,vol.48,no.2(2009) [DOI]
- M.Tabe,Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno,
Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons,2009 Materials Research Society Bulletin (Proceedings of MRS Fall Meeting 2008),vol.1145,no.MN10-01(2009)
- M.Ligowski,D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe
Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope,Applied Physics Letters,vol.93,no.14(2008) [DOI]
- M.Tabe,R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda
Si multidot FETs for single-electron transfer and single-photon detection,Acta Physica Polonica A,vol.113,no.3(2008) [DOI]
- M.Tabe,R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda
Manipulation of single electrons in Si nanodevices – interplay with photons and ions,Recent Advances in Mechatronics (Proceedings of Mechtronics 2007 Conference) (Springer)(2007) [DOI]
- D.Moraru,Y. Ono, H. Inokawa, and M. Tabe
Quantized-electron transfer through random multiple junctions in phosphorous-doped silicon nanowires,Physical Review B,vol.76,no.7(2007) [DOI]
- D.Moraru,Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe
Single-electron transfer in phosphorous-doped Si nanowire FETs,Reports of the Graduate School of Electronic Science and Technology, Shizuoka University,vol.28(2007)
- D.Moraru,H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe
Fowler-Nordheim current oscillations in Si(111)/SiO2/Si(111) tunneling structures,Japanese Journal of Applied Physics,vol.45,no.11(2006) [DOI]