2025
1. P. Sudha, S. Miyagawa, A. Samanta, and D. Moraru, “Ultra-sensitive short-wave infrared single-photon detection using a silicon single-electron transistor”, Advanced Electronic Materials, 2400714 (2025). LINK
2024
2. R. Asai, S. Masui, R. S. Strateanu, S. Miyagawa, and D. Moraru, “Study of stability diagrams of codoped silicon nano-transistors”, Acta Physica Polonica A, vol. 146, issue 4, pp. 655-659 (2024). LINK
3. S. Masui, R. Asai, B. A. Rianto, and D. Moraru, “Band-to-band tunneling spectroscopy of energy states in ultrathin silicon-on-insulator p−n diodes”, Acta Physica Polonica A, vol. 146, issue 4, pp. 650-654 (2024). LINK
4. S. Chakraborty, P. Yadav, D. Moraru, and A. Samanta, Transport spectroscopy of donor/quantum dot interactive system in silicon nano-transistors, Advanced Quantum Technologies, vol. 7, pp. 2440001 (2024). LINK
5. K. Yamamura, G. Otake, A. Ouchi, D. Moraru, A. Nakamura, and S. Tripathi, Ellipticity enhancement of a terahertz wave circular polarizer made of 3D chiral metamaterials, IEEE Photonics Technology Letters, Vol. 36, issue 7, pp. 457-460 (2024). LINK
2023
6. D. Alfafa, D. Moraru, and A. Udhiarto, Fabrication of organic light-emitting diodes (OLEDs) using the lamination method in a vacuum-free environment, International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE), vol. 1, issue 2, pp. 125-135 (2023). LINK
7. D. Moraru, Challenges and progress in the fabrication of silicon nanowire tunnel diodes, International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE), vol.1, issue 1, pp. 57-65 (2023). LINK
8. S. Kamegaki, D. Smith, M. Ryu, S. H. Ng, H. Huang, P. Maasoumi, J. Vongsvivut, D. Moraru, T. Katkus, S. Juodkazis, and J. Morikawa, Four-polarisation camera for anisotropy mapping at three orientations: micro-grain of olivine, Coatings, vol. 13, issue 9, pp. 1640_1-12 (2023). LINK (IF: 3.236)
9. D. Moraru, T. Kaneko, Y. Tamura, T. T. Jupalli, R. S. Singh, C. Pandy, L. Popa, and F. Iacomi, Single-charge tunneling in codoped silicon nanodevices, Nanomaterials, vol. 13, issue 13, pp. 1911_1-15 (2023). LINK (IF: 5.719)
10. D. P. Linklater, A. Vailionis, M. Ryu, S. Kamegaki, J. Morikawa, H. Mu, D. Smith, P. Maasoumi, R. Ford, T. Katkus, S. Blamires, T. Kondo, Y. Nishijima, D. Moraru, M. Shribak, A. O’Connor, E. Ivanova, S. H. Ng, H. Masuda, and S. Juodkazis, Structure and optical anisotropy of spider scales and silk: use of chromaticity and azimuth colors, Nanomaterials, vol. 13, issue 12, pp. 1894_1-23 (2023). LINK (IF: 5.719)
11. D. Smith, S. H. Ng, T. Katkus, A. Tang, D. Moraru, and S. Juodkazis, Crystalline Flat Surface Recovered by High Temperature Annealing after Laser Ablation, Photonics, vol. 10, no. 5, pp. 594_1-11 (2023). LINK (IF: 2.302).
12. H. Mu, D. Smith, T. Katkus, D. Gailevičius, M. Malinauskas, Y. Nishijima, P. R. Stoddart, D. Ruan, M. Ryu, J. Morikawa, T. Vasiliev, V. Lozovski, D. Moraru, S. H. Ng, and S. Juodkazis, Polarisation Control in Arrays of Microlenses and Gratings: Performance in Visible-IR Spectral Ranges, Micromachines, vol. 14, no. 4, pp. 798_1-19 (2023). LINK (IF: 3.523).
13. P. Yadav, S. Chakraborty, D. Moraru, and A. Samanta, Inelastic Cotunneling in the Coulomb-blockade transport of donor-atom transistors, Journal of Vacuum Science & Technology B, vol. 41, issue 1, pp. 012208_1-8 (2023). LINK（IF: 1.572）Editor’s Pick
2022
14. P. Yadav, S. Chakraborty, D. Moraru, and A. Samanta, Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors, Nanomaterials, vol. 12, 4437_1-12 (2022). LINK (IF: 4.921)
15. R. S. Singh, K. Takagi, T. Aoki, J. H. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru, Precise deposition of carbon nanotube bundles by inkjet-printing on a CMOS-compatible platform, Materials, vol. 15, no. 14, pp. 4935 (2022). LINK (IF: 3.601)
16. T. T. Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, and D. Moraru, Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors, Applied Physics Express, vol. 15, no. 6, pp. 065003 (2022). LINK (IF: 2.895)
2021
17. M. Anwar, T. E. Saraswati, L. Anjarwati, D. Moraru, A. Udhiarto, F. Adriyanto, H. Maghfiroh, and R. Nuryadi, Probing ionization characteristics of under-water plasma arc discharge using simultaneous current and voltage versus time measurement in carbon nanoparticle synthesis, Micro and Nano Engineering, vol. 14, no. 1, pp. 100099_1-7 (2021). LINK (IF: 3.54)
18. C. Pandy, G. Prabhudesai, K. Yamaguchi, V N Ramakrishnan, Y. Neo, H. Mimura, and D. Moraru, Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors, Applied Physics Express, vol. 14, no. 5, pp. 055002_1-6 (2021). LINK (IF: 3.086)
19. A. Udhiarto, R. Nuryadi, M. Anwar, G. Prabhudesai, and D. Moraru, Band-to-band tunneling mechanism observed at room-temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices, Japanese Journal of Applied Physics, vol. 60, no. 2, pp. 024001_1-7 (2021). LINK (IF: 1.376)
2019
20. A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, and D. Moraru, Coulomb-blockade transport in selectively-doped Si nano-transistors, Applied Physics Express, vol.12, no. 8, pp. 085004_1-5 (2019). LINK (IF: 2.772)
21. G. Prabhudesai, M. Muruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, and D. Moraru, Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes, Applied Physics Letters, vol. 114, no. 24, pp. 243502_1-5 (2019). LINK (IF: 3.521)
2018
22. H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Detection of single holes generated by impact ionization in silicon, Applied Physics Letters, vol. 113, no. 16, pp. 163103 (2018). LINK (IF:3.495)
23. H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara and Y. Ono, Electron aspirator using electron-electron scattering in nano-scale silicon, Nature Communications, vol. 9, pp. 4813-4820 (2018). LINK (IF: 12.353)
24. T. Momose, A. Nakamura, D. Moraru, and M. Shimomura, Phosphorus doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film, AIP Advances, vol. 8, no. 2, pp. 025009_1-8 (2018). LINK (IF: 1.568)
2017
25. A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, and D. Moraru, Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors, Applied Physics Letters, vol. 110, no. 9, pp. 093107_1-5 (2017). LINK (IF: 3.142)
2016
26. D. Moraru, M. Muruganathan, L. T. Anh, R. Nuryadi, H. Mizuta and M. Tabe, Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes, Recent Global Research and Education: Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp. 95-101 (2016). LINK
27. M. Tabe, A. Samanta, and D. Moraru, Toward Room Temperature Operation of Dopant Atom Transistors, Recent Global Research and Education: Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp. 83-88 (2016). LINK
28. M. Tabe, H. N. Tan, T. Mizuno, M. Muraganathan, L. T. Anh, H. Mizuta, R. Nuryadi, and D. Moraru, Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes, Applied Physics Letters, vol. 108, no. 9, pp. 093502-1-5 (2016). LINK (IF: 3.515)
2015
29. A. A. N. Gde Sapteka, H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, and H. Sudibyo, Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement, International Journal of Technology, vol. 6, no. 3, pp. 318-326 (2015). LINK
30. D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Physics of strongly-coupled dopant-atoms in nanodevices, International Journal of Technology, vol. 6, no. 6, pp. 1057-1064 (2015). LINK
31. A. Samanta, D. Moraru, T. Mizuno, and M. Tabe, Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors, Scientific Reports, vol. 5, pp. 17377-1-10 (2015). LINK (IF: 5.578)
32. D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Tunneling in systems of coupled dopant-atoms in Si nanodevices, Nanoscale Research Letters, vol. 10, pp. 372-1-10 (2015). LINK (IF: 2.779)
33. M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, and T. Mizuno, Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes, ECS Transactions, vol. 69, No. 10, pp. 189-195 (2015) (ULSI Process Integration 9 issue). LINK
34. K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors, Applied Physics Express, vol. 8, pp. 094202_1-4 (2015). LINK (IF: 2.365)
35. K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy, Journal of Applied Physics, vol. 117, no. 24, pp. 244307-1-6 (2015). LINK (IF: 2.185)
36. K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel, Advanced Materials Research, vol. 1117, pp. 82-85 (2015). LINK
37. D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe, Tunneling transport in quantum dots formed by coupled dopant atoms, Advanced Materials Research, vol. 1117, pp. 78-81 (2015). LINK
—————– Associate Professor (2015/01～) —————–
2014
38. S. Purwiyanti, A. Udhiarto, D. Moraru, T. Mizuno, D. Hartanto, and M. Tabe, Observation of tunneling effects in lateral nanowire pn junctions, Makara Journal of Technology (Makara Seri Teknologi), vol. 18, no. 2, pp. 91-95 (2014). CiteScore: -, Citations: -, Percentile: -. LINK
39. D. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe, Transport spectroscopy of interacting donors in silicon nano-transistors, Scientific Reports, vol. 4, pp. 6219-1-4 (2014). LINK (IF: 5.578)
40. L. T. Anh, D. Moraru, M. Manoharan, M. Tabe, and H. Mizuta, The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures, Journal of Applied Physics, vol. 116, pp. 063705-1-9 (2014). LINK (IF: 2.185)
41. D. Moraru, S. Purwiyanti, R. Nowak, T. Mizuno, A. Udhiarto, D. Hartanto, R. Jablonski, and M. Tabe, Individuality of dopants in silicon nano-pn junctions, Materials Science (Medziagotyra), vol. 20, no. 2, pp. 129-131 (2014). LINK (IF: 0.336)
42. R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy, Thin Solid Films (Special Issue ICSI-8/ISCSI-VI), vol. 557, pp. 249-253 (2014). LINK (IF: 1.759)
2013
43. A. Udhiarto, S. Purwiyanti, D. Moraru, T. Mizuno, and M. Tabe, Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction, Makara Journal of Technology (Makara Seri Teknologi), vol. 17, no. 2, pp. 64-68 (2013). LINK
44. S. Purwiyanti, R. Nowak, D. Moraru, T. Mizuno, D. Hartanto, R. Jablonski, and M. Tabe, Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes, Applied Physics Letters, vol. 103, issue 24, pp. 243102-1-4 (2013). LINK (IF: 3.515)
45. M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta, Dopant-atom-based tunnel SOI-MOSFETs, ECS Transactions – ULSI Process Integration 8, vol. 58, pp. 89-95 (2013). LINK
46. D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs, Transactions of the Materials Research Society of Japan, vol. 38, no. 2, pp. 261-264 (2013). LINK (IF: 0.2)
47. R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope, Applied Physics Letters, vol. 102, pp. 083109-1-4 (2013). LINK (IF: 3.515)
48. E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Electron-tunneling operation of single-donor-atom transistors at elevated temperatures, Physical Review B, vol. 87, no. 8, pp. 085420_1-5 (2013). (Best Paper Award from JSAP Silicon Technology Division: 第5回応用物理学会シリコンテクノロジー分科会論文賞). LINK (IF: 3.664)
2012
49. A. Udhiarto, D. Moraru, S. Purwiyanti, Y. Kuzuya, T. Mizuno, H. Mizuta, and M. Tabe, Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions, Applied Physics Express, vol. 5, pp. 112201 (2012). LINK (IF: 2.731)
50. R. Nowak, M. Anwar, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique, Journal of Advanced Research in Physics, vol. 3, no. 2, pp. 021202 (2012). LINK
51. M. Tabe, D. Moraru, A. Udhiarto, and T. Mizuno, 個々のドーパント原子を利用したシリコンナノデバイス －デバイス特性とフォトンセンシング機能－ (Silicon nanodevices using a few dopant atoms – device characteristics and photon sensing function -), 応用物理 (Oyo Butsuri), vol. 81, no. 2, pp. 147-150 (February 2012). LINK
2011
52. D. Moraru, E. Hamid, A. Udhiarto, T. Mizuno, and M. Tabe, Temperature evolution of electron transport in single-donor transistors, Journal of Advanced Research in Physics, vol. 2, no. 1, pp. 011112-1-3 (2011). LINK
53. M. Tabe, D. Moraru, E. Hamid, M. Anwar, R. Nowak, Y. Kuzuya, and T. Mizuno, Effect of donor-level deepening in nm-scale Si SOI-MOSFETs, Journal of Advanced Research in Physics, vol. 2, no. 1, pp. 011111-1-3 (2011). LINK
54. M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T. Mizuno, R. Jablonski, and M. Tabe, Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy, Applied Physics Letters, vol. 99, no. 21, pp. 213101-1-3 (2011). LINK (IF: 3.844)
55. A. Udhiarto, D. Moraru, T. Mizuno, and M. Tabe, Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors, Applied Physics Letters, vol. 99, no. 11, pp. 113108-1-3 (2011). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 24, no. 13, September 26th, 2011). LINK (IF: 3.844)
56. D. Moraru, A. Udhiarto, M. Anwar, R. Nowak, R. Jablonski, E. Hamid, J. C. Tarido, T. Mizuno, and M. Tabe, Atom devices based on single dopants in silicon nanostructures, Nanoscale Research Letters, vol. 6, pp. 479-1-9 (2011) (Nano Review) – “Highly Accessed”. LINK (IF: 2.726)
57. M. Anwar, Y. Kawai, D. Moraru, R. Nowak, R. Jablonski, T. Mizuno, and M. Tabe, Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope, Japanese Journal of Applied Physics (Special Issue: Scanning Probe Microscopy), vol. 50, no. 4, pp. 08LB10-1-4 (2011). LINK (IF: 1.058)
58. M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai, and T. Mizuno, Si-based single-dopant atom devices, Advanced Materials Research, vol. 222, pp. 205-208 (2011). LINK
59. D. Moraru, E. Hamid, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe, Memory effects based on dopant atoms in nano-FETs, Advanced Materials Research, vol. 222, pp. 122-125 (2011). LINK
60. M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T. Mizuno, R. Jablonski, and M. Tabe, KFM observation of electron charging and discharging in phosphorus-doped SOI channel, Key Engineering Materials, vol. 470, pp. 33-37 (2011). LINK
61. D. Moraru, K. Yokoi, R. Nakamura, S. Miki, T. Mizuno, and M. Tabe, Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs, Key Engineering Materials, vol. 470, pp. 22-27 (2011). LINK
62. M. Tabe, A. Udhiarto, D. Moraru, and T. Mizuno, Single-photon detection by Si single-electron FETs, Physica Status Solidi A, vol. 203, no. 3, pp. 646-651 (2011). (selected for inside back Cover Page). LINK (IF: 1.463)
2010
63. E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe, Single-electron transfer between two donors in thin nanoscale silicon-on-insulator field-effect transistors, Applied Physics Letters, vol. 97 (26), 262101 (2010). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 23, no. 1, Jan. 3rd 2011). LINK (IF: 3.841)
64. K. Yokoi, D. Moraru, T. Mizuno, and M. Tabe, Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays, Journal of Applied Physics, vol. 108, No. 5, pp. 058710-1-5 (2010). LINK (IF: 2.064)
65. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno, Single-electron transport through single dopants in a dopant-rich environment, Physical Review Letters, vol. 105, no. 1, p. 016803 (2010). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 22, no. 3, July 19th 2010). LINK (IF: 7.622)
66. M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno, Breakthrough of advanced nano-silicon devices, Indonesian Nanoletter, vol. 3, no. 1, pp. 17-21 (2010).
67. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno, Observation of Discrete Dopant Potential and Its Application to Si Single-Electron Devices, Thin Solid Films, vol. 518, no. 6, pp. S38-S43 (2010). LINK (IF: 1.935)
2009
68. D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe, Single-electron transport characteristics in quantum dot arrays due to ionized dopants, Journal of Automation, Mobile Robotics & Intelligent Systems, vol. 3, no. 4, pp. 52-54 (2009). LINK
69. M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski, Detection of individual dopants in single-electron devices – a study by KFM observation and simulation, Journal of Automation, Mobile Robotics & Intelligent Systems, vol. 3, no. 4, pp. 130-133 (2009). LINK
70. D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe, Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors, Applied Physics Express, vol. 2, no. 7, pp. 071201 (2009). LINK (IF: 2.223)
71. K. Yokoi, D. Moraru, M. Ligowski, and M. Tabe, Single-gated single-electron transfer in non-uniform arrays of quantum dots, Japanese Journal of Applied Physics, vol. 48, no. 2, pp. 024503 (2009). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 19, no. 9, May 11th 2009). LINK (IF: 1.138)
72. M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno, Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons, Proceedings of MRS Fall Meeting 2008, Materials Research Society Bulletin, Vol. 1145-MM10-01, pp. 1-7 (2009). LINK
2008
73. M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe, Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope, Applied Physics Letters, vol. 93, No. 14, pp. 142101 (2008). LINK (IF: 3.726)
74. M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda, Si multidot FETs for single-electron transfer and single-photon detection, Acta Physica Polonica A, Vol. 113, No. 3, pp. 811-814 (2008). LINK (IF: 0.321)
2007
75. M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda, Manipulation of single electrons in Si nanodevices – interplay with photons and ions, Recent Advances in Mechatronics, Springer, pp. 500-504 (2007).
76. D. Moraru, Y. Ono, H. Inokawa, and M. Tabe, Quantized-electron transfer through random multiple junctions in phosphorous-doped silicon nanowires, Physical Review B, vol. 76, No. 7, pp. 075332, 2007. (selected for Virtual Journal of Nanoscale Science & Technology, vol. 16, no. 10, 2007). LINK (IF: 3.172)
77. D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe, Single-electron transfer in phosphorous-doped Si nanowire FETs – Reports of the Graduate School of Electronic Science and Technology, Shizuoka University, No. 28, pp. 15-20, 2007. LINK
2006
78. D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe, Fowler-Nordheim current oscillations in Si(111)/SiO2/Si(111) tunneling structures – Japanese Journal of Applied Physics, vol. 45, No. 11, pp. L316-L318, 2006. LINK (IF: 1.222)