2024

1.      K. Yamamura, G. Otake, A. Ouchi, D. Moraru, A. Nakamura, and S. Tripathi, Ellipticity enhancement of a terahertz wave circular polarizer made of 3D chiral metamaterials, IEEE Photonics Technology Letters, Vol. 36, issue 7, pp. 457-460 (2024). LINK

2023

2.      D. Alfafa, D. Moraru, and A. Udhiarto, Fabrication of organic light-emitting diodes (OLEDs) using the lamination method in a vacuum-free environment, International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE), vol. 1, issue 2, pp. 125-135 (2023). LINK

3.      D. Moraru, Challenges and progress in the fabrication of silicon nanowire tunnel diodes, International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE), vol.1, issue 1, pp. 57-65 (2023). LINK

4.      S. Kamegaki, D. Smith, M. Ryu, S. H. Ng, H. Huang, P. Maasoumi, J. Vongsvivut, D. Moraru, T. Katkus, S. Juodkazis, and J. Morikawa, Four-polarisation camera for anisotropy mapping at three orientations: micro-grain of olivine, Coatings, vol. 13, issue 9, pp. 1640_1-12 (2023). LINK (IF: 3.236)

5.      D. Moraru, T. Kaneko, Y. Tamura, T. T. Jupalli, R. S. Singh, C. Pandy, L. Popa, and F. Iacomi, Single-charge tunneling in codoped silicon nanodevices, Nanomaterials, vol. 13, issue 13, pp. 1911_1-15 (2023). LINK (IF: 5.719)

6.      D. P. Linklater, A. Vailionis, M. Ryu, S. Kamegaki, J. Morikawa, H. Mu, D. Smith, P. Maasoumi, R. Ford, T. Katkus, S. Blamires, T. Kondo, Y. Nishijima, D. Moraru, M. Shribak, A. O’Connor, E. Ivanova, S. H. Ng, H. Masuda, and S. Juodkazis, Structure and optical anisotropy of spider scales and silk: use of chromaticity and azimuth colors, Nanomaterials, vol. 13, issue 12, pp. 1894_1-23 (2023). LINK (IF: 5.719)

7.      D. Smith, S. H. Ng, T. Katkus, A. Tang, D. Moraru, and S. Juodkazis, Crystalline Flat Surface Recovered by High Temperature Annealing after Laser Ablation, Photonics, vol. 10, no. 5, pp. 594_1-11 (2023). LINK (IF: 2.302).

8.      H. Mu, D. Smith, T. Katkus, D. Gailevičius, M. Malinauskas, Y. Nishijima, P. R. Stoddart, D. Ruan, M. Ryu, J. Morikawa, T. Vasiliev, V. Lozovski, D. Moraru, S. H. Ng, and S. Juodkazis, Polarisation Control in Arrays of Microlenses and Gratings: Performance in Visible-IR Spectral Ranges, Micromachines, vol. 14, no. 4, pp. 798_1-19 (2023). LINK (IF: 3.523).

9. P. Yadav, S. Chakraborty, D. Moraru, and A. Samanta, Inelastic Cotunneling in the Coulomb-blockade transport of donor-atom transistors, Journal of Vacuum Science & Technology B, vol. 41, issue 1, pp. 012208_1-8 (2023). LINK（IF: 1.572）Editor’s Pick

2022

  1. P. Yadav, S. Chakraborty, D. Moraru, and A. Samanta, Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors, Nanomaterials, vol. 12, 4437_1-12 (2022). LINK (IF: 4.921)
  1. R. S. Singh, K. Takagi, T. Aoki, J. H. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru, Precise deposition of carbon nanotube bundles by inkjet-printing on a CMOS-compatible platform, Materials, vol. 15, no. 14, pp. 4935 (2022). LINK (IF: 3.601)
  2. T. T. Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, and D. Moraru, Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors, Applied Physics Express, vol. 15, no. 6, pp. 065003 (2022). LINK (IF: 2.895)

2021

  1. M. Anwar, T. E. Saraswati, L. Anjarwati, D. Moraru, A. Udhiarto, F. Adriyanto, H. Maghfiroh, and R. Nuryadi, Probing ionization characteristics of under-water plasma arc discharge using simultaneous current and voltage versus time measurement in carbon nanoparticle synthesis, Micro and Nano Engineering, vol. 14, no. 1, pp. 100099_1-7 (2021). LINK (IF: 3.54)
  2. C. Pandy, G. Prabhudesai, K. Yamaguchi, V N Ramakrishnan, Y. Neo, H. Mimura, and D. Moraru, Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors, Applied Physics Express, vol. 14, no. 5, pp. 055002_1-6 (2021). LINK (IF: 3.086)
  3. A. Udhiarto, R. Nuryadi, M. Anwar, G. Prabhudesai, and D. Moraru, Band-to-band tunneling mechanism observed at room-temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices, Japanese Journal of Applied Physics, vol. 60, no. 2, pp. 024001_1-7 (2021). LINK (IF: 1.376)

2019

  1. A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, and D. Moraru, Coulomb-blockade transport in selectively-doped Si nano-transistors, Applied Physics Express, vol.12, no. 8, pp. 085004_1-5 (2019). LINK (IF: 2.772)
  2. G. Prabhudesai, M. Muruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, and D. Moraru, Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes, Applied Physics Letters, vol. 114, no. 24, pp. 243502_1-5 (2019). LINK (IF: 3.521)

2018

  1. H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Detection of single holes generated by impact ionization in silicon, Applied Physics Letters, vol. 113, no. 16, pp. 163103 (2018). LINK (IF:3.495)
  2. H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara and Y. Ono, Electron aspirator using electron-electron scattering in nano-scale silicon, Nature Communications, vol. 9, pp. 4813-4820 (2018). LINK (IF: 12.353)
  3. T. Momose, A. Nakamura, D. Moraru, and M. Shimomura, Phosphorus doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film, AIP Advances, vol. 8, no. 2, pp. 025009_1-8 (2018). LINK (IF: 1.568)

2017

  1. A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe, and D. Moraru, Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors, Applied Physics Letters, vol. 110, no. 9, pp. 093107_1-5 (2017). LINK (IF: 3.142)

2016

  1. D. Moraru, M. Muruganathan, L. T. Anh, R. Nuryadi, H. Mizuta and M. Tabe, Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes, Recent Global Research and Education: Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp. 95-101 (2016). LINK
  2. M. Tabe, A. Samanta, and D. Moraru, Toward Room Temperature Operation of Dopant Atom Transistors, Recent Global Research and Education: Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp. 83-88 (2016). LINK
  3. M. Tabe, H. N. Tan, T. Mizuno, M. Muraganathan, L. T. Anh, H. Mizuta, R. Nuryadi, and D. Moraru, Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes, Applied Physics Letters, vol. 108, no. 9, pp. 093502-1-5 (2016). LINK (IF: 3.515)

2015

  1. A. A. N. Gde Sapteka, H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, and H. Sudibyo, Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement, International Journal of Technology, vol. 6, no. 3, pp. 318-326 (2015). LINK
  2. D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Physics of strongly-coupled dopant-atoms in nanodevices, International Journal of Technology, vol. 6, no. 6, pp. 1057-1064 (2015). LINK
  3. A. Samanta, D. Moraru, T. Mizuno, and M. Tabe, Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors, Scientific Reports, vol. 5, pp. 17377-1-10 (2015). LINK (IF: 5.578)
  4. D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Tunneling in systems of coupled dopant-atoms in Si nanodevices, Nanoscale Research Letters, vol. 10, pp. 372-1-10 (2015). LINK (IF: 2.779)
  5. M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, and T. Mizuno, Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes, ECS Transactions, vol. 69, No. 10, pp. 189-195 (2015) (ULSI Process Integration 9 issue). LINK
  6. K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors, Applied Physics Express, vol. 8, pp. 094202_1-4 (2015). LINK (IF: 2.365)
  7. K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy, Journal of Applied Physics, vol. 117, no. 24, pp. 244307-1-6 (2015). LINK (IF: 2.185)
  8. K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel, Advanced Materials Research, vol. 1117, pp. 82-85 (2015). LINK
  9. D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe, Tunneling transport in quantum dots formed by coupled dopant atoms, Advanced Materials Research, vol. 1117, pp. 78-81 (2015). LINK

—————– Associate Professor (2015/01～) —————–

2014

  1. S. Purwiyanti, A. Udhiarto, D. Moraru, T. Mizuno, D. Hartanto, and M. Tabe, Observation of tunneling effects in lateral nanowire pn junctions, Makara Journal of Technology (Makara Seri Teknologi), vol. 18, no. 2, pp. 91-95 (2014). CiteScore: -, Citations: -, Percentile: -. LINK (Citations: 0)
  2. Moraru, A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe, Transport spectroscopy of interacting donors in silicon nano-transistors, Scientific Reports, vol. 4, pp. 6219-1-4 (2014). LINK (IF: 5.578)
  3. L. T. Anh, D. Moraru, M. Manoharan, M. Tabe, and H. Mizuta, The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures, Journal of Applied Physics, vol. 116, pp. 063705-1-9 (2014). LINK (IF: 2.185)
  4. D. Moraru, S. Purwiyanti, R. Nowak, T. Mizuno, A. Udhiarto, D. Hartanto, R. Jablonski, and M. Tabe, Individuality of dopants in silicon nano-pn junctions, Materials Science (Medziagotyra), vol. 20, no. 2, pp. 129-131 (2014). LINK (IF: 0.336)
  5. R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy, Thin Solid Films (Special Issue ICSI-8/ISCSI-VI), vol. 557, pp. 249-253 (2014). LINK (IF: 1.759)

2013

  1. A. Udhiarto, S. Purwiyanti, D. Moraru, T. Mizuno, and M. Tabe, Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction, Makara Journal of Technology (Makara Seri Teknologi), vol. 17, no. 2, pp. 64-68 (2013). LINK
  2. S. Purwiyanti, R. Nowak, D. Moraru, T. Mizuno, D. Hartanto, R. Jablonski, and M. Tabe, Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes, Applied Physics Letters, vol. 103, issue 24, pp. 243102-1-4 (2013). LINK (IF: 3.515)
  3. M. Tabe, D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta, Dopant-atom-based tunnel SOI-MOSFETs, ECS Transactions – ULSI Process Integration 8, vol. 58, pp. 89-95 (2013). LINK
  4. D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs, Transactions of the Materials Research Society of Japan, vol. 38, no. 2, pp. 261-264 (2013). LINK (IF: 0.2)
  5. R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope, Applied Physics Letters, vol. 102, pp. 083109-1-4 (2013). LINK (IF: 3.515)
  6. E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, and M. Tabe, Electron-tunneling operation of single-donor-atom transistors at elevated temperatures, Physical Review B, vol. 87, no. 8, pp. 085420_1-5 (2013). (Best Paper Award from JSAP Silicon Technology Division: 第5回応用物理学会シリコンテクノロジー分科会論文賞). LINK (IF: 3.664)

2012

  1. A. Udhiarto, D. Moraru, S. Purwiyanti, Y. Kuzuya, T. Mizuno, H. Mizuta, and M. Tabe, Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions, Applied Physics Express, vol. 5, pp. 112201 (2012). LINK (IF: 2.731)
  2. R. Nowak, M. Anwar, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique, Journal of Advanced Research in Physics, vol. 3, no. 2, pp. 021202 (2012). LINK
  3. M. Tabe, D. Moraru, A. Udhiarto, and T. Mizuno, 個々のドーパント原子を利用したシリコンナノデバイス －デバイス特性とフォトンセンシング機能－ (Silicon nanodevices using a few dopant atoms – device characteristics and photon sensing function -), 応用物理 (Oyo Butsuri), vol. 81, no. 2, pp. 147-150 (February 2012). LINK

2011

  1. D. Moraru, E. Hamid, A. Udhiarto, T. Mizuno, and M. Tabe, Temperature evolution of electron transport in single-donor transistors, Journal of Advanced Research in Physics, vol. 2, no. 1, pp. 011112-1-3 (2011). LINK
  2. M. Tabe, D. Moraru, E. Hamid, M. Anwar, R. Nowak, Y. Kuzuya, and T. Mizuno, Effect of donor-level deepening in nm-scale Si SOI-MOSFETs, Journal of Advanced Research in Physics, vol. 2, no. 1, pp. 011111-1-3 (2011). LINK
  3. M. Anwar, R. Nowak, D. Moraru, A. Udhiarto, T. Mizuno, R. Jablonski, and M. Tabe, Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy, Applied Physics Letters, vol. 99, no. 21, pp. 213101-1-3 (2011). LINK (IF: 3.844)
  4. A. Udhiarto, D. Moraru, T. Mizuno, and M. Tabe, Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors, Applied Physics Letters, vol. 99, no. 11, pp. 113108-1-3 (2011). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 24, no. 13, September 26th, 2011). LINK (IF: 3.844)
  5. D. Moraru, A. Udhiarto, M. Anwar, R. Nowak, R. Jablonski, E. Hamid, J. C. Tarido, T. Mizuno, and M. Tabe, Atom devices based on single dopants in silicon nanostructures, Nanoscale Research Letters, vol. 6, pp. 479-1-9 (2011) (Nano Review) – “Highly Accessed”. LINK (IF: 2.726)
  6. M. Anwar, Y. Kawai, D. Moraru, R. Nowak, R. Jablonski, T. Mizuno, and M. Tabe, Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope, Japanese Journal of Applied Physics (Special Issue: Scanning Probe Microscopy), vol. 50, no. 4, pp. 08LB10-1-4 (2011). LINK (IF: 1.058)
  7. M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai, and T. Mizuno, Si-based single-dopant atom devices, Advanced Materials Research, vol. 222, pp. 205-208 (2011). LINK
  8. D. Moraru, E. Hamid, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe, Memory effects based on dopant atoms in nano-FETs, Advanced Materials Research, vol. 222, pp. 122-125 (2011). LINK
  9. M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T. Mizuno, R. Jablonski, and M. Tabe, KFM observation of electron charging and discharging in phosphorus-doped SOI channel, Key Engineering Materials, vol. 470, pp. 33-37 (2011). LINK
  10. D. Moraru, K. Yokoi, R. Nakamura, S. Miki, T. Mizuno, and M. Tabe, Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs, Key Engineering Materials, vol. 470, pp. 22-27 (2011). LINK
  11. M. Tabe, A. Udhiarto, D. Moraru, and T. Mizuno, Single-photon detection by Si single-electron FETs, Physica Status Solidi A, vol. 203, no. 3, pp. 646-651 (2011). (selected for inside back Cover Page). LINK (IF: 1.463)

2010

  1. E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe, Single-electron transfer between two donors in thin nanoscale silicon-on-insulator field-effect transistors, Applied Physics Letters, vol. 97 (26), 262101 (2010). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 23, no. 1, Jan. 3rd 2011). LINK (IF: 3.841)
  2. K. Yokoi, D. Moraru, T. Mizuno, and M. Tabe, Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays, Journal of Applied Physics, vol. 108, No. 5, pp. 058710-1-5 (2010). LINK (IF: 2.064)
  3. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno, Single-electron transport through single dopants in a dopant-rich environment, Physical Review Letters, vol. 105, no. 1, p. 016803 (2010). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 22, no. 3, July 19th 2010). LINK (IF: 7.622)
  4. M. Tabe, D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno, Breakthrough of advanced nano-silicon devices, Indonesian Nanoletter, vol. 3, no. 1, pp. 17-21 (2010).
  5. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno, Observation of Discrete Dopant Potential and Its Application to Si Single-Electron Devices, Thin Solid Films, vol. 518, no. 6, pp. S38-S43 (2010). LINK (IF: 1.935)

2009

  1. D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe, Single-electron transport characteristics in quantum dot arrays due to ionized dopants, Journal of Automation, Mobile Robotics & Intelligent Systems, vol. 3, no. 4, pp. 52-54 (2009). LINK
  2. M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski, Detection of individual dopants in single-electron devices – a study by KFM observation and simulation, Journal of Automation, Mobile Robotics & Intelligent Systems, vol. 3, no. 4, pp. 130-133 (2009). LINK
  3. D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe, Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors, Applied Physics Express, vol. 2, no. 7, pp. 071201 (2009). LINK (IF: 2.223)
  4. K. Yokoi, D. Moraru, M. Ligowski, and M. Tabe, Single-gated single-electron transfer in non-uniform arrays of quantum dots, Japanese Journal of Applied Physics, vol. 48, no. 2, pp. 024503 (2009). (selected for the Virtual Journal of Nanoscale Science & Technology, vol. 19, no. 9, May 11th 2009). LINK (IF: 1.138)
  5. M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno, Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons, Proceedings of MRS Fall Meeting 2008, Materials Research Society Bulletin, Vol. 1145-MM10-01, pp. 1-7 (2009). LINK

2008

  1. M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe, Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope, Applied Physics Letters, vol. 93, No. 14, pp. 142101 (2008). LINK (IF: 3.726)
  2. M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda, Si multidot FETs for single-electron transfer and single-photon detection, Acta Physica Polonica A, Vol. 113, No. 3, pp. 811-814 (2008). LINK (IF: 0.321)

2007

  1. M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda, Manipulation of single electrons in Si nanodevices – interplay with photons and ions, Recent Advances in Mechatronics, Springer, pp. 500-504 (2007).
  2. D. Moraru, Y. Ono, H. Inokawa, and M. Tabe, Quantized-electron transfer through random multiple junctions in phosphorous-doped silicon nanowires, Physical Review B, vol. 76, No. 7, pp. 075332, 2007. (selected for Virtual Journal of Nanoscale Science & Technology, vol. 16, no. 10, 2007). LINK (IF: 3.172)
  3. D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe, Single-electron transfer in phosphorous-doped Si nanowire FETs – Reports of the Graduate School of Electronic Science and Technology, Shizuoka University, No. 28, pp. 15-20, 2007. LINK

2006

74. D. Moraru, H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe, Fowler-Nordheim current oscillations in Si(111)/SiO2/Si(111) tunneling structures – Japanese Journal of Applied Physics, vol. 45, No. 11, pp. L316-L318, 2006. LINK (IF: 1.222)