1. R. S. Singh, K. Takagi, T. Aoki, J.-H. Moon, Y. Neo, F. Iwata, H. Mimura, and D. Moraru, “Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform” Materials 15 (14), 4935 (July 2022). [DOI]
  2. T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, and D. Moraru, Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
    Applied Physics Express 15, pp. 065003_1-4, May (2022).[DOI]
  3. M. Anwar, T. E. Saraswati, L. Anjarwati, D. Moraru, A. Udhiarto, F. Adriyanto, H. Maghfiroh, and R. Nuryadi, Probing ionization characteristics of under-water plasma arc discharge
    using simultaneous current and voltage versus time measurement in carbon
    nanoparticle synthesis
    Micro and Nano Engineering 14, pp.100099_1-7, December (2021).[DOI]
  4. C. Pandy, G. Prabhudesai, K. Yamaguchi, V N Ramakrishnan, Y. Neo, H. Mimura, and D. Moraru, Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
    Applied Physics Express 14, pp.055002_1- 6, April (2021). [DOI]
  5. A. Udhiarto, R. Nuryadi, M. Anwar, G. Prabhudesai, and D. Moraru,
    Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices
    Jpn. J. Appl. Phys.60, 024001_1-7, January (2021). [DOI]
  6. A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. ONO, M. Tabe, and D. Moraru,
    Coulomb-blockade transport in selectively-doped Si nano-transistors
    Applied Physics Express     12, 085004 (2019).[DOI]
  7. G. Prabhudesai, M. Muruganathan, L.T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, and D. Moraru
    Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes
    Applied Physics Letter Vol.114,Issue 243502,pp.243502-1-5, June (2019). [DOI]
  8. H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara, Y.Ono
    Electron aspirator using electron-electron scattering in nanoscale silicon
    Nature Communications. Vol.9, December (2018) pp.4813_1-8. [DOI]
  9. H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara, and Y.Ono
    Detection of single holes generated by impact ionization in silicon
    Appl.Phys.Lett. Vol.113,Issue 16, pp.163103_1-5, October (2018).[DOI]
  10. T. Momose, A. Nakamura, D. Moraru, and M. Shimomura
    Phosphorus doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film
    AIP Advances, vol. 8, no. 2, pp. 025009_1-8, February (2018).[DOI]
  11. A. Afiff, T. Hasan, A. Udhiarto, H. Sudibyo, D. Hartanto, A. Samanta, M. Muruganathan, H. Mizuta, M. Tabe, and D. Moraru
    A statistical study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors
    IEEE Xplore (2017 15th International Conference on Quality in Research, QiR: International Symposium on Electrical and Computer Engineering), pp. 74-78 , December (2017).[DOI]
  12. A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe and D. Moraru
    Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
    Appl. Phys. Lett., vol. 110, no. 9, pp. 093107_1-5, May (2017).[DOI]
  13. D. Moraru, M. Muruganathan, L. T. Anh, R. Nuryadi, H. Mizuta and M. Tabe
    Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes
    Recent Global Research and Education:Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp.95-101 (2016).[DOI]
  14. M. Tabe, A. Samanta and D. Moraru
    Toward Room Temperature Operation of Dopant Atom Transistors
    Recent Global Research and Education:Technological Challenges, Proceedings of the 15th International Conference on Global Research and Education Inter-Academia, pp.83-88 (2016).[DOI]
  15. M. Tabe, H. N. Tan, T. Mizuno, M. Muruganathan, L. T. Anh, H. Mizuta, R. Nuryadi, and D. Moraru, Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes, Appl. Phys. Lett., vol. 108, no. 9, pp. 093502-1-5 (2016).[DOI]
  16. A.A.N. Gde Sapteka, H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, and H. Sudibyo, Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement, International Journal of Technology, vol. 6, No. 3, pp. 318-326 (2015)/indexed in SCOPUS.[DOI]
  17. D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Physics of strongly-coupled dopant-atoms in nanodevices, International Journal of Technology, vol. 6, no. 6, pp. 1057-1064 (2015)/indexed in SCOPUS.[DOI]
  18. A. Samanta, D. Moraru, T. Mizuno, and M. Tabe, Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors, Scientific Reports, vol. 5, pp. 17377-1-10 (2015).[DOI]
  19. D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe, Tunneling in systems of coupled dopant-atoms in Si nanodevices, Nanoscale Research Letters (Nano Review), vol. 10, pp. 372-1-10 (2015).[DOI]
  20. M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, and T. Mizuno, Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes, ECS Transactions, vol. 69, No. 10, pp. 189-195 (2015) (ULSI Process Integration 9 issue).[DOI]
  21. K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe, Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors, Appl. Phys. Express, vol. 8, pp. 094202_1-4 (2015).[DOI]
  22. K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy, J. Appl. Phys., vol. 117, no. 24, pp. 244307-1-6 (2015).[DOI]
  23. K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel, Advanced Materials Research, vol. 1117, pp. 82-85 (2015).[DOI]
  24. D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe, Tunneling transport in quantum dots formed by coupled dopant atoms, Advanced Materials Research, vol. 1117, pp. 78-81 (2015).[DOI]

    Previous Work

  25. L.T.Anh, D. Moraru, M. Manoharan, M. Tabe ,and  H. Mizuta,The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures ,Journal of Applied Physics vol.116,no. pp.063705-1 -063705-9(2014).[DOI]
  26. D. Moraru,A. Samanta, L. T. Anh, T. Mizuno, H. Mizuta, and M. Tabe,Transport spectroscopy of coupled donors in silicon nano-transistors, Scientific Reports ,vol.4,pp.6219-1-6219-6 （2014).[DOI]
  27. S. Purwiyanti,A. Udhiarto, D. Moraru, T. Mizuno, D. Hartanto, and M. Tabe, Observation of tunneling effects in lateral nanowire pn junctions, Makara Journal of Technology ,vol.18,no.2,pp. 91-95 （2014).[DOI]
  28. R. Nowak,D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy, Thin Solid Films ,vol.557,pp. 249-253 （2014).[DOI]
  29. D. Moraru,S. Purwiyanti, R. Nowak, T. Mizuno, A. Udhiarto, D. Hartanto, R. Jablonski,and M. Tabe, Individuality of dopants in silicon nano-pn junctions, Materials Science,vol. 20,no.2,pp. 129-131 （2014）.[DOI]
  30.  D. Moraru,E. Hamid, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta,and M. Tabe, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs,
    Transactions of the Materials Research Society of Japan,vol. 38,no.2,pp.261-264 （2013）.[DOI]
  31. M. Tabe,D. Moraru, E. Hamid, A. Samanta, L. T. Anh, T. Mizuno, and H. Mizuta, Dopant-atom-based tunnel SOI-MOSFETs, ECS Transactions,vol.58,no.9,pp. 89-95 （2013）.[DOI]
  32. S. Purwiyanti,R. Nowak, D. Moraru, T. Mizuno, D. Hartanto, R. Jablonski,and M. Tabe, Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes, Applied Physics Letters,vol. 103,no.24,pp. 243102-1-243102-4 （2013）.[DOI]
  33. A. Udhiarto,S. Purwiyanti, D. Moraru, T. Mizuno,and M. Tabe, Observation of photovoltaic effect and single-photon detection in nanowire silicon pn-junction, Makara Journal of Technology ,vol.17,no.2,pp. 64-68 （2013）.[DOI]
  34. R. Nowak,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe, Effect of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope,Applied Physics Letters,vol.102,no.8(2013).[DOI]
  35. E. Hamid,D. Moraru,Y. Kuzuya,T. Mizuno,L. T. Anh,H. Mizuta,M. Tabe, Electron-tunneling operation of single-donor-atom transistors at elevated temperatures,Physical Review B,vol.87,no.8(2013). [DOI]
  36. A. Udhiarto,D. Moraru,S. Purwiyanti,Y. Kuzuya,T. Mizuno,H. Mizuta,M. Tabe, Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions, Applied Physics Express,vol.5,pp.112201-1-112201-3(2012).[DOI]
  37. R. Nowak,M. Anwar,D. Moraru,T. Mizuno,R. Jablonski,M. Tabe, Electron filling in phosphorus donors embedded in silicon nanostructures observed by KFM technique, Journal of Advanced Research in Physics, vol.3,no.2,pp.021202-1-021202-3(2012).
  38. M. Tabe,D. Moraru,A. Udhiarto,T. Mizuno, Silicon nanodevices using a few dopant atoms – device characteristics and photon sensing function -,Oyo Butsuri, vol.81.no2,pp.147-150(2012).
  39. M. Tabe,D. Moraru,E. Hamid,M. Anwar,R. Nowak,Y. Kuzuya,T. Mizuno,
    Effect of donor-level deepening in nm-scale Si SOI-MOSFETs,Journal of Advanced Research in Physics,vol.2.no.1,pp.011111-1-011111-3(2011).[DOI]
  40. D. Moraru,E. Hamid,A. Udhiarto,T. Mizuno,M. Tabe,
    Temperature evolution of electron transporvot in single-donor transistors, Journal of Advanced Research in Physics, vol.2.no.1.pp.011112-1-011112-3(2011).
  41. M. Anwar,R. Nowak,D. Moraru,A. Udhiarto,T. Mizuno,R. Jablonski,M. Tabe,
    Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy,Applied Physics Letters,vol.99,no.21(2011).[DOI]
  42. A. Udhiarto,D. Moraru,T. Mizuno,M. Tabe,
    Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors,Applied Physics Letters,vol.99,no.11(2011).[DOI]
  43. M.Anwar,Y. Kawai,D. Moraru,R. Nowak,R. Jablonski,T. Mizuno,M. Tabe
    Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope,Japanese Journal of Applied Physics,vol.50,no.4(2011). [DOI]
  44. D.Moraru,A. Udhiarto,M. Anwar,R. Nowak,R. Jablonski,E. Hamid,J. C. Tarido,T. Mizuno,M. Tabe
    Atom devices based on single dopants in silicon nanostructures,Nanoscale Research Letters,vol.6(2011) [DOI]
  45. D.Moraru,E. Hamid,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe,
    Memory effects based on dopant atoms in nano-FETs,Advanced Materials Research,vol.222(2011) [DOI]
  46. M.Tabe,D. Moraru,A. Udhiarto,S. Miki,M. Anwar,Y. Kawai,T. Mizuno,
    Si-based single-dopant atom devices,Advanced Materials Research,vol.222(2011) [DOI]
  47. M.Tabe,A. Udhiarto,D. Moraru,T. Mizuno,
    Single-photon detection by Si single-electron FETs, Physica Status Solidi A,vol.203,no.3(2011) [DOI]
  48. D.Moraru,K. Yokoi,R. Nakamura,S. Miki,T. Mizuno,M. Tabe,
    Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs, Key Engineering Materials,vol.470,(2011)　[DOI]
  49. M.Anwar,D. Moraru,Y. Kawai,M. Ligowski,T. Mizuno,R. Jablonski,M. Tabe,
    KFM observation of electron charging and discharging in phosphorus-doped SOI channel,Key Engineering Materials,vol.470,(2011) [DOI]
  50. E.Hamid,D. Moraru,J. C. Tarido,S. Miki,T. Mizuno,M. Tabe,
    Single-electron transfer between two donors in thin nanoscale silicon-on-insulator field-effect transistors,Applied Physics Letters,vol.97,no.26(2010)　[DOI]
  51. K.Yokoi,D. Moraru, T. Mizuno, and M. Tabe,
    Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays,Journal of Applied Physics,vol.108,no.5(2010)　[DOI]
  52. M.Tabe,D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno,Single-electron transport through single dopants in a dopant-rich environment,Physical Review Letters,vol.105,no.1(2010) [DOI]
  53. M.Tabe,D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno,
    Observation of discrete dopant potential and its application to Si single-electron devices,Thin Solid Films,vol.518,no.6(2010) [DOI]
  54. M.Tabe,D. Moraru, M. Anwar, K. Yokoi, R. Nakamura, M. Ligowski, S. Miki, and T. Mizuno,
    Breakthrough of advanced nano-silicon devices,Indonesian Nanoletter,vol.3,no.1(2010)
  55. M.Ligowski,D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski,
    Detection of individual dopants in single-electron devices – a study by KFM observation and simulation,Journal of Automation, Mobile Robotics & Intelligent Systems,vol.3,no.4(2009) [DOI
  56. D.Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, and M. Tabe
    Single-electron transport characteristics in quantum dot arrays due to ionized dopants,Journal of Automation, Mobile Robotics & Intelligent Systems,vol.3,no4(2009)　[DOI]
  57. D.Moraru,M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe,
    Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors, Applied Physics Express,vol.2,no.7(2009) [DOI]
  58. K.Yokoi,D. Moraru, M. Ligowski, and M. Tabe,
    Single-gated single-electron transfer in non-uniform arrays of quantum dots,Japanese Journal of Applied Physics,vol.48,no.2(2009)　[DOI]
  59. M.Tabe,Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski, and T. Mizuno,
    Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons,2009 Materials Research Society Bulletin (Proceedings of MRS Fall Meeting 2008),vol.1145,no.MN10-01(2009)
  60. M.Ligowski,D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe
    Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope,Applied Physics Letters,vol.93,no.14(2008)　[DOI]
  61. M.Tabe,R. Nuryadi, D. Moraru, Z. A. Burhanudin, K. Yokoi, and H. Ikeda
    Si multidot FETs for single-electron transfer and single-photon detection,Acta Physica Polonica A,vol.113,no.3(2008)　[DOI]
  62. M.Tabe,R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi, and H. Ikeda
    Manipulation of single electrons in Si nanodevices – interplay with photons and ions,Recent Advances in Mechatronics (Proceedings of Mechtronics 2007 Conference) (Springer)(2007)　[DOI]
  63. D.Moraru,Y. Ono, H. Inokawa, and M. Tabe
    Quantized-electron transfer through random multiple junctions in phosphorous-doped silicon nanowires,Physical Review B,vol.76,no.7(2007)　[DOI]
  64. D.Moraru,Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe
    Single-electron transfer in phosphorous-doped Si nanowire FETs,Reports of the Graduate School of Electronic Science and Technology, Shizuoka University,vol.28(2007)
  65. D.Moraru,H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda, and M. Tabe
    Fowler-Nordheim current oscillations in Si(111)/SiO2/Si(111) tunneling structures,Japanese Journal of Applied Physics,vol.45,no.11(2006)　[DOI]