カテゴリー: What’s New

We participated in “the 66th JSAP spring meeting 2019” held at Tokyo Institute of Technology Ookayama Campas on March 9 to 12, 2019.
There were two presentations from our laboratory as follows.

[1] 松久 快生、小林 佑斗、杉田 篤、井上 翼、中野 貴之、“両極性同時成長法を用いたGaN-QPM結晶の作製および光学特性評価”第66回応用物理学会春季学術講演会、10p-W541-7、東京工業大学大岡山キャンパス、2019年3月9‐12日

[2] 高橋 祐吏、丸山 貴之、山田 夏暉、江原 一司、太田 悠人、中川 央也、 宇佐美 茂佳、本田 善央、天野浩、小島 一信、 秩父 重英、井上 翼、青木 徹、中野 貴之、“中性子イメージングセンサーに向けたBGaN半導体検出器の開発”第66回応用物理学会春季学術講演会、11p-S622-8、東京工業大学大岡山キャンパス、2019年3月9‐12日

I participated in “IWN 2018” held at Ishikawa prefectural music festival · ANA Crown Plaza Hotel Kaza Kanazawa on November 11 to 16, 2018.
There were three presentations from our laboratory as follows.

[1] Kazushi Ebara, Ken Mochizuki, Yoku Inoue, Toru Aoki, Kazunobu Kojima, Shigefusa F. Chichibu, and Takayuki Nakano, ”Kinetics analysis of desorption process in BGaN MOVPE”, The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR10-5, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, &Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018

[2] Takayuki Maruyama, Yuri Takahashi, Natsuki yamada, Kazushi Ebara, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigefusa F. Chichibu, Yoku Inoue, Toru Aoki, and Takayuki Nakano, “Fabrication and evaluation of thick BGaN neutron detection diodes”, The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR10-4, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018

[3] Kai Matsuhisa, Hirotaka Yagi, Yoku Inoue, and Takayuki N, “Study of double polarity GaN MOVPE with narrow pitch pattern by V/III ratio contro” The International Workshop on Nitride Semiconductors 2018 (IWN 2018), GR8-5, Ishikawa Ongakudo, ANA Crowne Plaza Hotel Kanazawa, & Motenashi-Dome, Kanazawa, Japan, November 11–16, 2018

Yuri Takahashi announced “BGaN半導体検出器の厚膜化および放射線検出特性評価”At the 79th Annual Meeting of the Japan Society for Applied Physics held at the Nagoya International Conference Hall on 18th to 21st September 2018 and was awarded.

高橋 祐吏、丸山 貴之、山田 夏暉、江原 一司、望月 健、中川 央也、宇佐美 茂佳、本田 善央、天野 浩、小島 一信、秩父 重英、井上 翼、青木 徹、中野 貴之、“BGaN半導体検出器の厚膜化および放射線検出特性評価”、第79回応用物理学会秋季学術講演会、20p-PB5-64、名古屋国際会議場、2018年9月18‐21日