Publications

2023
Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono:
Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces Communications Physics, 6(1), 316_1-11, October (2023).

Ryo Watanabe, Fumiya Karasawa, Chikamasa Yokoyama, Kazumasa Oshima, Masahiro Kishida, Masahiro Hori, Yukinori Ono, Shigeo Satokawa, Priyanka Verma, and Choji Fukuhara:
Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S
RSC Advances, 13,11525–11529, April (2023).

Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito:
Magnetometry of neurons using a superconducting qubit
Communications Physics, 6(1), 19_1-6, February (2023).

2022
T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru:
Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
Appl. Phys. Express, 15, 065003_1-4, May (2022).

2021
M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono :
Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Appl. Phys. Express, 14, 104003_1-4, September (2021).

Hori, Y. Ono :
Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors
Appl. Phys. Lett. 118, 263504_1-6, June (2021).

2019
A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, D. Moraru:
Coulomb-blockade transport in selectively-doped Si nano-transistors
Appl. Phys. Express, Vol.,12, No. 8, July (2019) pp.085004_1-5.

M. Hori, Y. Ono:
Charge Pumping Under Spin Resonance in Si(100) Metal-Oxide-Semiconductor Transistors
Phys.Rev.Applied, Vol. 11, No. 6, June (2019) pp.064064-_1-12.

Prabhudesai, M. Muruganathan, L T Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, D. Moraru:
Single-charge band-to band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes
Appl.Phys.Lett., Vol.114, No. 24, June (2019) pp.243502_1-5.

2018
H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono:
Electron aspirator using electron-electron scattering in nanoscale silicon
Nature Communications. Vol.9, December (2018) pp.4813_1-8.

H.Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi,  A. Fujiwara, Y.Ono:
Detection of single holes generated by impact ionization in silicon
Appl.Phys. Lett. Vol.113, Issue 16, October (2018) pp. 163103_1-5.

2017
A. Samanta, M. Muruganathan, M. Hori, Y. Ono, H. Mizuta, M. Tabe , D. Moraru:
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Appl. Phys. Lett. Vol.110, May  (2017) pp. 093107_1-5.

Watanabe, M. Hori, T. Tsuchiya,  A. Fujiwara, Y. Ono:
Time-domain charge pumping on silicon-on-insulator MOS devices
Jpn. J. Appl. Phys. Vol.56, January (2017) pp. 011303_1-5.

Hori, T. Tsuchiya, Y. Ono:
Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor
Applied Physics Express, Vol.10, January (2017) pp.015701_1-4.

2016
E. Prati, K. Kumagai, M. Hori, T. Shinada:
Band transport across a chain of dopant sites in silicon over micron distances and high temperatures
Scientific Reports, Vol.6, January (2016) pp. 19704_1-8.

2015
M. Jo, T. Uchida,  A. Tsurumaki-Fukuchi, M.  Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi:
Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
J. Appl. Phys., Vol.118, No. 21, December (2015) pp.214305_1-6.

T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono:
Evaluation of accuracy of time-domain charge pumping
IEICE Trans. Electron, Vol.E98-C, No. 5, May (2015) pp.390-394.

Hori, A. Fujiwara, M. Uematsu, Y. Ono:
Electrical activation and electron spin resonance measurements of arsenic implanted in silicon
Appl. Phys. Lett., Vol.106, No. 14, April (2015) pp. 142105_1-4.

T. Tsuchiya, Y. Ono:
Charge pumping current from single Si-SiO2 interface traps:
Direct observation of Pb centers and fundamental trap-counting by the charge pumping method
Jpn. J. Appl. Phys., Vol.54, January (2015) pp. 04DC01_1-7. (JSAP paper award)

M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono:
Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current
Appl. Phys. Lett., Vol.106, No. 4, January (2015) pp. 041603 _1-4.

2014
M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono:
Analysis of electron capture process in charge pumping sequence using time domain measurements
Appl. Phys. Lett., Vol.105, No. 26, December (2014) pp. 261602_1 -4.

K. Nishiguchi, Y. Ono, A. Fujiwara:
Single-electron thermal noise
Nanotechnology, Vol.25, No. 27, June (2014) pp. 275201_1-7.

2013
Y. Niida, K. Takashina, Y. Ono,  A. Fujiwara, Y. Hirayama:
Electron and hole mobilities at a Si/SiO 2 interface with giant valley splitting
Appl. Phys. Lett. Vol.102, No. 19, May (2013) pp. 191603_1-4.

2012
E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada:
Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor
Nature Nanotechnology, Vol.7, No. 7, July (2012) pp. 443-447.

M. Hori, K. Taira,  A. Komatsubara, K. Kumagai, Y. Ono, T. Tanii, T. Endoh, T. Shinada:
Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position
Appl. Phys. Lett., Vol.101, No. 10, July (2012) pp.013503_1-3.

G.P. Kabsbergen, Y. Ono,  A. Fujiwara:
Donor-based single electron pumps with tunable donor binding energy
Nano Letters, Vol.12,(2012) pp.763-768.

2011
H. Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, M. Notomi:
Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers
Optics Express, Vol.19, No. 25, December (2011) pp.25255-25262.

Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta:
Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon
Thin Solid Films, Vol.519, No. 24, October (2011) pp.8505-8508.

M. Hori, T. Shinada, Y. Ono,  A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, Ohdomari:
Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors
Appl. Phys. Lett., Vol.99, No. 6, August (2011) pp.062103_1-3.

T. Goto, H. Inokawa, Y. Ono,  A. Fujiwara, K. Torimitsu:
Electrical measurements of terphenyl-based molecular devices
Jpn. J. Appl. Phys., Vol.50, No. 7, July (2011) pp.071603_1-6.

M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen,  A. Fujiwara:
Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 and 285 K
J. Appl. Phys., Vol.110, No. 19, July (2011) pp.014512_1-6.

K. Nishiguchi, Y. Ono,  A. Fujiwara:
Single-electron counting statistics of shot noise in nanowire Si MOSFETs
Appl. Phys. Lett., Vol.98, No. 19, May (2011) pp.193502_1-3.

M. Hori, T. Shinada, K. Taira,  A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari:
Enhancing secondary electron detection efficiency by applying a substrate bias voltage for deterministic single-ion
doping
Appl. Phys. Express, Vol.4, No. 4, March (2011) pp. 046501_1-2.

Y. Takahashi, M. Jo, T. Kaizawa, Y. Kato, M. Arita,  A. Fujiwara , Y. Ono, H. Inokawa, J.-B. Choi:
Si Nanodot device fabricated by thermal oxidation and their applications
Key Engineering Materials, Vol.470, No. 3, February (2011) pp.175-183.

J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara:
Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., Vol.98, No. 3, January (2011) pp.033503_1-3.

2010
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, K. Muraki:
Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made
by wafer bonding
Semicond.Sci.Techol., Vol.25, No.12, Novmber(2010) pp.125001_1-4.

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara:
Resonant escape over an oscillating barrier in a single-electron ratchet transfer
Phys. Rev. B, Vol. 82, No. 3, July (2010) pp. 033303_1-4.

M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, T. Mizuno:
Single-electron transport through single dopants in a dopant-rich environment
Phys. Rev. Lett., Vol.105, No. 1, July (2010) pp. 016803_1-4.

J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, A. Fujiwara:
Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., Vol. 96, No. 11, March (2010) pp.112102_1-3.

M. Jo, T. Kaizawa, M. Arita,  A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J.-B. Choi:
Fabrication of double-dot single-electron transistor in silicon nanowire
Thin Solid Films, Vol. 518, No. 6S1, January (2010) pp.S186-S189.

2009
M. Jo, T. Kaizawa, M. Arita,  A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Si nanodot array device with multiple gates
Material Science in Semiconductor Processing, Vol. 11, No. 5-6 Sp.Iss.SI, October (2009) 175 – 178.

M. Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endoh, I. Ohdomari:
Performance enhancement of semiconductor devices by control of discrete dopant distribution
Nanotechnology, Vol. 20, Issue: 36, August (2009) 365205_1-5.

T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Single-electron device with Si nanodot array and multiple input gates
IEEE Trans. Nanotechnology, Vol. 8, No. 4, July (2009) 535- 541.

T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, J.-B. Choi:
Full adder operation based on Si nanodot array device with multiple inputs and outputs
International Journal of Nanotechnology and Molecular Computation, Vol. 1, No. 2, April-June (2009) 58 – 69.

M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara:
Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors
Appl. Phys. Lett. , Vol. 94, No. 22, April (2009) 223501_1-3.

K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki:
Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures
Appl. Phys. Lett. Vol., 94, No. 14, April (2009) 142104_1-3.

2008
T.Shinada, T. Kurosawa, H. Nakayama, Y. Zhu, M. Hori, I. Ohdomari:
A reliable method for the counting and control of single ions for single-dopant controlled devices
Nanotechnology, Vol. 19, Issue: 34, July (2008) 345202_1-4.

S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara:
Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
Appl. Phys. Lett., Vol. 93, No. 22, December (2008) 222103_1-3.

K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi:
Single-electron-resolution electrometer based on field-effect transistor
Jpn. J. Appl. Phys., Vol. 47, No. 11, November (2008) 8305-8310.

N. M. Zimmerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa, M. Furlan, M. W. Keller:
Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
J. Appl. Phys., Vol. 104, No.3, August (2008) 033710_1-12.

S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta:
First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si
Phys. Rev. B, Vol. 78, No.4, July (2008) 045307_1-7.

Paper for invited talk
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi:
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Appl. Sur.Sci., Vol. 254, No.19, July (2008) 6252-6256.

S. Yabuuchi, Y. Ono, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta:
Ferromagnetism of manganese-silicide nanopariticles in Silicon
Jpn. J. Appl. Phys. , Vol. 47, No. 6, June (2008) 4487 – 4450.

H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama:
A gate-defined silicon quantum dot molecule
Appl. Phys. Lett., Vol. 92, No. 22, June (2008) 222104_1-3.

Paper for invited talk
Y. Ono,  A. Fujiwara, K. Nishiguchi, Y. Takahashi, H. Inokawa:
Silicon single-charge transfer devices
J. Phys. Chem. Solids, Vol. 69, No. 2-3, February/march (2008) 702 – 707.

H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama:
Pauli-spin-blockade transport through a silicon double quantum dot
Phys. Rev. B Vol., 77, No.7, February (2008) 073310_1-4.

K. Nishiguchi, Y. Ono, A. Fujiwara , H. Inokawa , Y. Takahashi:
Stochastic data processing circuit based on single electrons using nano field-effect transistors
Appl. Phys. Lett., Vol. 92, No. 6, February (2008) 062105_1-3.

A. Fujiwara, K. Nishiguchi, Y. Ono:
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductorfield-effect transistor
Appl. Phys. Lett. , Vol. 92, No. 4, January (2008) 042102_1-3.

2007
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara:
dentification of single and coupled acceptors in silicon nano field-effect transistors
Appl. Phys. Lett., Vol. 91, No. 26, December (2007) 263513_1-3.

D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, M. Tabe:
Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires
Phys. Rev. B Vol. 76, No.7 August (2007) 075332_1-5.

T. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, Y. Hirayama:
Anomalous resistance ridges along filling factor v = 4i
Phys. Rev. Lett., Vol. 99, No. 3, July (2007) 036803_1-4.

W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu:
Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
IEICE Trans. Electron., Vol. E-90C, No. 5, May (2007) 943 – 948.

K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Infrared detection with silicon nano field-effect transistor
Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1-3.

K. Nishiguch, Y. Ono,  A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Infrared detection with silicon nano field-effect transistor
Appl. Phys. Lett., Vol. 90, No. 22, May (2007) 223108_1-3.

K. Takashina, B. Gaillaed, Y. Ono, Y. Hirayama:
Low-temperature characteristics of ambipolar SiO2/Si/SiO2 hall-bar devices
Jpn. J. Appl. Phys., Vol. 46, No. 4B, April (2007) 2596 – 2598.

T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, K. Torimitsu:
Effect of UV/Ozone treatment on nanogap electrodes for molecular devices
Jpn. J. Appl. Phys., Vol. 46, No. 4A, April (2007) 1731 – 1733.

J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, H. Yamaguchi:
Impact of space-energy correlation on variable-range hopping in transistors
Phys. Rev. Lett., Vol. 98, No. 16, April (2007) 166601_1-4.

Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi:
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Appl. Phys. Lett., Vol. 90, No. 10, March (2007) 102106_1-3.

K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, Y. Kobayashi:
Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation
J. Appl. Phys., Vol. 101, No. 3, February (2007) 034317_1-4.

K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi:
Long retention of gain-cell dynamic random access memory with undoped memory node
IEEE Electron Device Letters, Vol. 28, No.1, January (2007) 48- 50.

N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa:
Charge offset stability in tunable-barrier Si single-electron tunneling devices
Appl. Phys. Lett., Vol. 90, No. 3, January (2007) 033507_1-3.

2006
Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi:
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at    temperatures between 10 and 295 K
Phys. Rev. B, Vol. 74, No. 23, December (2006) 235317_1-9.

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama:
Intersubband scattering in double-gate MOSFETs
IEEE Trans. Nanotechnology, Vol. 5, No. 5, September (2006) 430-435.

K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama:
Valley polarization in Si(100) at zero magnetic field
Phys. Rev. Lett., Vol. 96, No. 23, June (2006) 236801_1-4.

K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi:
Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
Appl. Phys. Lett., Vol. 88, No. 18, May (2006) 183101_1-3.

N. Clement, H. Inokawa, Y. Ono:
Studies on MOSFET low-frequency noise for electrometer applications,
Jpn. J. Appl. Phys., Vol. 45, No. 4B, April (2006) 3606 – 3608.

2005
K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa:
Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires
Jpn. J. Appl. Phys., Vol. 44, No. 10, October (2005) 7717 – 7719.

A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, P. M. Ajayan:
Metal-semiconductor transition in single-wall carbon nanotubes induced by low energy electron irradiation
Nano. Lett., Vol. 5, No. 8, August (2005) 1585 – 1589.

Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, Y. Ono:
Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
Appl. Phys. Lett., Vol. 87, No. 12, September (2005) 12195_1-3.

Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, Y. Takahashi:
Charge-state control of phosphorus donors in a silicon-on-insulator metal-oxide-semiconductor field-effect transistor
Jpn. J. Appl. Phys., Vol. 44, No. 4B, April (2005) 2588 – 2591.

Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa, Y. Takahashi:
Review articleManipulation and detection of single electrons for future information processing
J. Appl. Phys., Vol. 97, No. 03, January (2005) 031101-1-031101-19.

2004
N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, Y. Takahashi:
Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices
J. Appl. Phys., Vol. 96, No. 9, November (2004) 5254 – 5266.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilfunctional Boolean logic using single-electron transistors
IEICE Trans. Electrons, Vol. E87-C, No. 11, November (2004) 1809-1817.

S.- J. Kim, Y. Ono, Y. Takahashi, J. B. Choi:
Real-time observation of single-electron movement through silicon single-electron transistor
Jpn. J. Appl. Phys., Vol. 43, No. 10, October (2004) 6863 – 6867.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilevel memory using an electrically formed single-electron box
Appl. Phys. Lett., Vol. 85, No. 7, August (2004) 1277 – 1279.

A. Fujiwara, N. M. Zimmerman, Y. Ono, Y. Takahashi:
Current quantization due to single-electron transfer in Si-wire charge coupled devices
Appl. Phys. Lett., Vol. 84, No. 8, Feburary (2004) 1323 – 1325.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Multilevel memory using single-electron turnstile
Electronics Letters, Vol. 44, No. 4, February (2004) 229- 230.

K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi:
Automatic control of oscillation phase of a single-electron transistor
Electron Devices Letters, Vol. 25, No. 1, January (2004) 31-33.

2003
H. Namatsu, Y. Watanabe, K. Yamazaki,T. Yamaguchi, M. Nagase, Y. Ono, A.Fujiwara, S. Horiguchi:
Influence of oxidation temperature on Si single-electron transistor characteristics
J. Vac. Sci. Technol.,Vol. B21, No. 6, November/December(2003) 2869-2873.

Y. Ono, N. M. Zimmerman, K, Yamazaki, Y. Takahashi:
Turnstile operation using a silicon dual-gate single-electron transistor
Jpn. J. Appl. Phys., Vol. 42, No. 10A, October (2003) L1109 – L1111.

Y. Takahashi, Y. Ono, A. Fujiwara, H. Inokawa:
Invited paper:Development of silicon single-electron devices
Physica E., Vol. 19, No. 1-2, July (2003) 95-101.

T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase:
Ultimately thin double-gate SOI MOSFETs
IEEE Trans. Electron devices, Vol. 50, No. 3, March (2003) 830 – 838.

Y. Ono and Y. Takahashi:
Electron pump by a combined single-electron/field-effect transistor structure
Appl. Phys. Lett., Vol. 82, No. 8, Feburary (2003) 1221 – 1223.

H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, S. Horiguchi:
Fabrication of Si single-electron transistors with precise dimensions using electron-beam nanolithography
J. Vac. Sci. Technol., Vol. B21, No. 1, January/February (2003) 1 – 5.

2002
Paper for invited talk
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, Y. Takahashi:
Fabrication of single-electron transistors and circuits using SOIs
Solid-State Electronics, Vo1. 46, No. 11, November (2002) 1723 – 1727.

Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa:
Review article: Silicon single-electron devices
J. of Phys.; Condens. Matter, Vol. 14, No. 39, October (2002) R995-R1033.

Y. Ono, H. Inokawa, Y. Takahashi:
Binary adder of single-electron transistors: Specific design using pass-transistor logic
IEEE Trans. Nanotechnology, Vol. 1, No. 2, June (2002) 93-99.

M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, Y. Takahashi:
Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation
Applied Surface Science, Vol. 190, No. 1-4, May (2002) 144 – 150.

Y. Ono and Y. Takahashi:
Observation and circuit application of negative differential conductance in Si single-electron transistors
Jpn. J. Appl. Phys., Vol. 41, No. 4B, April (2002) 2569 -2573.

R. Nuryadi, Y. Ishikawa, Y. Ono, M. Tabe:
Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum
J. Vac. Sci. Technol., Vol. B20, No. 1, January/February (2002) 167 – 172.

2001
Paper for invited talk
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi and Y. Takahashi:
Single-electron and quantum SOI devices
Microelectronic Engineering, Vo1. 59, No. 1-4, November (2001) 435 – 442.

Y.Ono, K. Yamazaki, Y. Takahashi: Si single-electron transistors with high voltage gain
IEICE Trans. Electron. Vol. E84-C, No. 8, August, (2001) 1061 – 1065.

2000
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Si complementary single-electron inverter with voltage gain
Appl. Phys. Lett., Vol. 76, No. 21, May (2000) 3121 – 3123.

Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Single-electron transistors and current-switching devices fabricated by Vertical Pattern-Dependent Oxidation
Jpn. J. Appl. Phys., Vol. 39, No. 4B, April (2000) 2325 – 2328.

Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase:
Fabrication method for IC-oriented Si single-electron transistors
EEE Trans. on Electron Devices, Vol. 47, No. 1, January (2000) 147 – 153.

1999
T. Ernst, D. Munteanua, S. Cristoloveanua, T. Ouissea, S. Horiguchib, Y. Ono, Y. Takahashi, K. Murase:
Investigation of SOI MOSFETs with ultimate thickness
Microelectronics Engineering, Vol. 48, No. 1-4, September (1999) 339 – 342.

1998
T. Ouisse, D. Maude, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase, S. Cristoloveanu:
Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFETs
Physca B, Vol. 249-251, No. 1, June (1998) 731 – 734.

1996
Y. Ono, Y. Takahashi, S. Horiguchi, K. Murase, M. Tabe:
Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film
J. Appl. Phys., Vol. 80, No. 8, October (1996) 4450 – 4457.

1995
Y. Ono, M. Nagase, M. Tabe, Y. Takahashi:
Thermal agglomeration of thin single crystal Si on SiO2 in vacuum
Jpn. J. Appl. Phys. Vol. 34, No. 4A, April (1995) 1728 – 1735.

Y. Takahashi, T. Furuta, Y. Ono, T. Ishiyama, M. Tabe:
Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate
Jpn. J. Appl. Phys., Vol. 34, No. 2B, February (1995) 950 – 954.

1994
H. Kageshima, Y. Ono, M. Tabe, T. Ohno:
Origin of dark regions in scanning tunneling microscopy images formed by thermal oxidation of Si(111) surface
Jpn. J. Appl. Phys., Vol. 33, No. 7A, July (1994) 4070 – 4074.

1993
Y. Ono, M. Tabe, H. Kageshima:
Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7×7 surfaces
Phys. Rev., B Vol. 48, No. 19, November (1993) 14291 – 14300.

Y. Ono, M. Tabe, Y. Sakakibara:
Segregation and defect termination of fluorine at SiO2/Si interfaces
Appl. Phys. Lett., Vol. 62, No. 4, January (1993) 375 – 377.

1990
Y. Ono and T. Makino:
Influence of effective masses on the oscillation of Fowler-Nordheim tunneling in thin SiO2 MOS capacitors
Jpn. J. Appl. Phys., Vol. 29, No. 11, November (1990) 2381 – 2385.