Master and Undergraduate students from our lab, along with other colleagues in our Department of Electronics and Materials Science, have delivered their graduation presentations along with their theses, as requirements for their graduation.
For Master course, on February 13, the following students gave presentations on the topics indicated below:
平野 太一 (Taichi Hirano): ナノデバイス作製に向けた高濃度ドープSOI薄膜の組成分析及び結晶性評価 (“Compositional analysis and crystallinity evaluation of highly doped SOI thin films for nanodevice fabrication“)
増井 駿 (Shun Masui): ナノスケールSOIpnダイオード中における共添加領域の影響 (“Influence of co-doped regions in nanoscale SOI pn diodes“)
浅井 玲音 (Reon Asai): 共ドープSiナノトランジスタにおける電気特性及びSOI薄膜の解析 (“Analysis of electrical characteristics and SOI thin films in co-doped Si nanotransistors“)
Congratulations for completion of requirements and thanks for contributions to our lab for several years, including conference presentations, papers and research work.
For Undergraduate course of our Faculty of Engineering, on February 20, the following students gave presentations on the topics indicated below:
頭師 系人 (Keito Zushi): 高濃度ドープSiナノpnダイオードおよびpinダイオードの常温と低温特性評価 (“Room-temperature and low-temperature characterization of highly doped Si nano pn and pin diodes”)
川副 桃佳 (Momoka Kawasoe): 異なるドーピング濃度による共ドープSiナノトランジスタの低温特性評価 (“Low-temperature characterization of codoped Si nanotransistors with different doping concentrations”)
矢野 樹 (Itsuki Yano): Si高濃度ドープpnダイオードにおけるナノ構造幅と濃度の影響に関する評価 (“Evaluation of the influence of nanostructure width and concentration in Si heavily doped pn diodes”)
Congratulations for building up a valuable scenario based on the graduation work in your final year of Faculty. We hope this will lead to a successful next stage in your careers!
