Another paper was published in Applied Physics Letters, from a collaboration between Shizuoka University and IIT Roorkee:
P. Sudha, S. Chakraborty, D. Moraru, and A. Samanta, “Quantum and dielectric confinement on phosphorus donors in silicon nano-transistors for high-temperature single-electron tunneling” (Appl. Phys. Lett. 127, 023506 (2025)).
This work aimed at leveraging the low-dimensionality of our silicon nanodevices, fabricated in our Cleanroom, to raise the operation temperature of single-electron tunneling via phosphorus-donor-induces quantum dots. In particular, we could show that quantum confinement effect is significantly supported by dielectric confinement effect to enhance the ionization energies of the few donors in the transistor nano-channels, allowing conditions for room-temperature operation to be also outlined. This paper provides a pathway for more practical applications of donor-induced quantum dots working based on a fundamental quantum mechanism.
Congratulations to Ms. Pooja Sudha and Mr. Soumya Chakraborty for their valuable contributions to data analysis and simulations that made our conclusions possible! Many thanks also to Dr. Arup Samanta (Assoc. Professor, IIT Roorkee) for coordinating this work and for many ideas exchanged over the course of preparing this manuscript.
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Looking forward to our next collaboration project!