Another paper has been just published from our group, with key collaboration from Universitas Indonesia, in Physica Status Solidi A. This time, the topic is focused on exploring a unique observation that can be related to “Dopant-Cluster-Mediated Electron Transport in the Excess-Current Region of Ultrathin Silicon pn Junctions”, co-authored by: Daris Alfafa, Baskoro Arif Rianto, Arief Udhiarto, and Daniel Moraru. This kind of observation opens the possibility of using tunneling transport as a sort of spectroscopy tool to investigate deep energy levels induced by dopants in pn diodes that have a thickness of just a few nanometers.
LINK
There are also two other quite important aspects that can be learned from this output.
First is the strong long-time collaboration with Prof. Arief Udhiarto, built on decades of prior interactions supported by many professors and students. This collaboration, enhanced by our team’s visit in January 2025 to Universitas Indonesia, supported partly by the Short Stay Short Visit (SSSV) of the Faculty of Engineering, and by the large 6th International Conference on Nano Electronics Research and Education (ICNERE) in Hamamatsu in October 2025, results now naturally in such scientific output.
Second is the impact of various programs sustained by Shizuoka University over the years, in particular on this paper. Daris Alfafa, the first author, is a Double Degree Program (DDP) PhD student in between Shizuoka University and Universitas Indonesia. Baskoro Arif Rianto is a former graduate of the Faculty of Engineering at Universitas Indonesia, who spent two years in our lab within the Asia Bridge Program (ABP) Master course. He graduated recently and is ready to start his work in Japan.
We all look forward to the next developments from these programs and this collaboration…