December 2018
G.Prabhudesai gave an oral presentation at the Inter-Academia Asia 2018.(Dec. 5, Hotel Associa, Shizuoka)
G.Prabhudesai, Y.Ono, M.Tabe, D.Moraru
“Effect of Dimensionality on Donor-Induced Quantum-Dot Formation in Si Pn Diodes”

November
2018

G. Prabhudesi and A. Afiff  presented their posters in the 20th Takayanagi Kenjiro Memorial Symposium, The 4th ICNERE Joint Symposium (Nov.,27-29,2018.Hamamatsu Campus, Shizuoka University)

G.Prabhudesai, G.Girijakumari, M. Manoharan, L. T.Anh, H.Mizuta, M. Hori, Y.Ono, M.Tabe ,and D.Moraru
“Analysis of Single-electron Tunneling via Donor-induced Quantum Dots in Si Nanoscale Esaki Diodes”

A.Afiff, M. Hasan, A. Udhiarto, H.Sudibyo, D.Hartanto, M. Tabe, and D.Moraru
“Control of Dopant-Atom Chains in Selectively-Doped Si Nano-Transistors for Single-Electron Transfer Applications”

Invited talk
Daniel Moraru gave an invited talk in the the 20th Takayanagi Kenjiro Memorial Symposium, The 4th ICNERE Joint Symposium.(Nov.,27-29,2018.Hamamatsu Campus, Shizuoka University)
D.Moraru
“Study of High-Temperature Single-Electron Tunneling via Dopant Quantum Dots in Silicon on Nanodevices”

Award
Afiff Adnan Fatahillah
received the Best Presentation Award For Young Researcher in the 20th Takayanagi Kenjiro Memorial Symposium, The 4th ICNERE Joint Symposium (Nov.,27-29,2018.Hamamatsu Campus, Shizuoka University)

October 2018

Daniel Moraru gave a keynote talk in ICIMECE 2018 (International Conference on Industrial, Mechanical, Electrical, and Chemical Engineering).
Many thanks for the invitation from Selebas Maret University and for the interest of the students and staff in our Asia Bridge Program and research.(Oct.,9, Solo, Indonesia)

Ananta Debnath joined our group from Bangladesh as an Asia Bridge Program (ABP) Master Student. Welcome and good luck!

Luminita Popa (Special Graduate Research Student) have joined again our lab for 3months within an Erasmus+Program. Welcome back!

Md Mahmudul Hasan(M2) and Ryuichiro Tsujimura (M1) have joined Faculty of Physics, AI.I.Cuza University (UAIC), Iasi, Romania for several months within an Erasmus Plus student mobility program. Enjoy, Iasi, Romania, and your studies during this time!.


September 2018
Two oral presentations have been given by our group in inter-Academia Conference (Sep.24-27, Kaunas, Lithuania)

  1. G.Prabhudesai, G. Greeshma G, M. Tabe, and D. Moraru – “A Statistical Study on the Origin of Dopant Clusters in Highly-Doped Si Nanoscale pn Tunnel Diodes”
  2. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe, D. Moraru – “A Study of Single-Electron Tunneling in 1D Distributed Arrays of Donor Quantum Dots”

Greeshma Girijakumari attended the Graduation Ceremony of Shizuoka University from Master course as a member of Asia Bridge Program (ABP) students.

April 2018
Koshi Nishida joins our group as a Graduate (MSc) student. Welcome to our group!Kensuke Yamaguchi and Kenya Suganami join our group as an Undergraduate (B4)student. Welcome to our group!

March 2018
Graduation Ceremony Faculty of Engineering
Mitsuki Shibuya and Toru Yamashita graduated from Master course.
Ryuichiro Tsujimura and Takahiro Negoro graduated from Bachelor course. Congratulations and good luck in your next projects! (Mar. 22)

        

Prof. Liviu Leontie from the Faculty of Physics, Al. I. Cuza University (UAIC) Iasi, Romania delivered a Special Lecture at the Graduate School of Science and Technology (Mar. 8, Hamamatsu Campus, Shizuoka University)
Title:”Layered III-VI group semiconductors and related structures”

Prof. Leontie also presented the mobility activities related to the Erasmus+ Program and had several meetings with officials of Shizuoka University.

Thank you for your visit!

 

G. Prabhudesai, A. Afiff and G. Greeshma presented their posters in the 4th International Symposium toward the Future of Advanced Researches in Shizuoka University 2018 (Mar.6, Hamamatsu Campus, Shizuoka University):

G. Prabhudesai, G. Greeshma, M. Shibuya, T. Okasaka, T. Negoro, M. Tabe and D. Moraru
“Interactions between donors and acceptors in nanoscale Si pn tunnel diodes and impact on inter-band tunneling”

A. Afiff, T. Yamashita, K. Sakazaki, R. Tsujimura, M. Hasan, A. Samanta, A. Udhiarto, H. Sudibyo, D. Hartanto, M. Tabe and D. Moraru
“Role of the position and number of donor-induced quantum dots in Si nano-channels for Coulomb blockade transport”

G. Greeshma, M. Shibuya, G. Prabhudesai, M. Tabe and D. Moraru
“Conditions for Coulomb blockade inter-band tunneling transport in nanoscale Si pn tunnel diodes”
Congratulations!!!

February 2018
Kazuki Sakazaki (坂﨑 一貴) and Takuya Okasaka (岡坂 拓哉) (M1) gave their mid-term presentations on the topics below:
T. Okasaka: “SiトンネルFETにおけるドーパント誘起電位のシミュレーション” (“Simulations of dopant-induced potentials in Si tunnel field-effect transistors (TFETs)”)
K. Sakazaki: “ジャンクションレスSiナノトランジスタの Pドナー量子ドットによる単一電子トンネリング” (“Single-electron tunneling via P-donor quantum dots in Si junctionless nano-transistors”)
Good luck for the final year! (Feb. 23)

Mitsuki Shibuya (渋谷 光希) and Toru Yamashita (山下 徹) (M2) gave their MSc defense presentations on the topics below:
T. Yamashita: “選択的に高濃度リンドープされたシリコンナノトランジスタの作製と評価” (“Fabrication and evaluation of selectively high-concentration phosphorus-doped Si nano-transistors”)
M. Shibuya: “ナノスケールシリコンpn/pinトンネルダイオードの作製と評価” (“Fabrication and evaluation of nanoscale Si pn/pin tunnel diodes”)
Congratulations on good work. Good luck next! (Feb. 21)

Ryuichiro Tsujimura (辻村 龍一郎) and Takahiro Negoro (根来 隆宏) (B4) gave their graduation presentations on the topics below:
T. Negoro: “サイドゲートを用いたナノスケールSiトンネルダイオードの設計と作製” (“Design and fabrication of nanoscale Si tunnel diode with side gates”)
R. Tsujimura: “高濃度ドーピングによるドナークラスター量子ドットを介したSiナノトランジスタの設計と作製” (“Design and fabrication of Si nano-transistors with donor-cluster quantum dots by high-concentration doping”)
Congratulations! (Feb.16)

December 2017
Daniel Moraru received the Takayanagi Prize for our group’s research on the topic”Single-electron tunneling at high temperatures via impurity atoms as quantum dots in silicon nanodevices” (シリコンナノデバイスにおける不純物量子ドットを介した高温単電子トンネリングに関する研究)

Adnan Afiff and Gaurang Prabhudesai gave oral presentations at the Inter-Academia Asia Conference. (Dec. 5, Hotel Associa, Shizuoka)

Afiff, T. Yamashita, A. Udhiarto, H. Sudibyo, D. Hartanto, A. Samanta, M. Tabe, and D. Moraru – “Characterization of Coulomb-blockade transport in dopant quantum dots formed in moderately-doped silicon nano-transistors”

Prabhudesai, M. Shibuya, G. Greeshma, M. Tabe, and D. Moraru – “Identification of transport via discrete dopant-induced energy states in low-dimensional Si tunnel diodes”

November 2017
Prof. Tabe gave a presentation in The 4th De Novo Si Workshop.
M.Tabe, D.Moraru-超高濃度ドーパントが拓く新しい半導体物性
(Nov.24, Tokyo University of Agriculture and Technology)

Afiff Adnan Fatahillah and Prabhudesai Gaurang Pramod presented a poster in
the 19th Takayanagi Kenjiro Memorial Symposium.
(Nov. 21, Hamamatsu Campus, Shizuoka University)

October 2017
Hasan MD Mahmudul attended the Entrance Ceremony of Shizuoka University, as a member of Asia Bridge Program (ABP) Master students.
Welcome to our group!!

October 2017
Invited talk

Daniel Moraru gave an invited talk in the International Microwave, Electron Devices & Solid-State Circuits Symposium (IMESS) organized by the IEEE Penang ED/MTT/SSC Joint Chapter, Malaysia.
D. Moraru and M. Tabe
“Single-Electron Tunneling Phenomena in Silicon Nano-Transistors with Dopant-Induced Quantum Dots”

Afterward, Daniel Moraru visited Universiti Teknologi Petronas (UTP) and met with staff and students of the Electrical and Electronic Engineering Department. Thanks for the hospitality and interesting discussion!

September 2017
KM Tarik Hasan attended the Graduation Ceremony of Shizuoka University, as a member of the first batch of Asia Bridge Program (ABP) students. Congratulations and good luck in your work!

September 2017
Daniel Moraru gave an oral presentation in Inter-Academia2017.
(Sep. 25-28, Alexandru Ioan Cuza University of Iasi, Romania)
D.Moraru, A.Afiff, T.Hasan, G.Prabhudesai, G.Greeshma, and M.Tabe
Effects of Electric Field on Tunneling via Dopant States in Silicon Nano-Devices

August 2017
Invited talk

Daniel Moraru gave an Invited lecture in the International Conference on Nanoscience and Nanotechnology (ICONN) 2017 held at SRM University, Chennai, India.(Aug.9-11)
D.Moraru, A.Afiff, T.Hasan, A.Samanta, and M.Tabe
“Silicon Single-Electron Tunneling Transistors with Dopant-Quantum-Dots: Perspectives for Room-Temperature Operation”

    

Award
Gaurang Prabhudesai received the Young Researcher Award for Innovation in the International Conference on Nanoscience and Nanotechnology (ICONN)2017
held at SRM University, Chennai, India. (Aug. 9-11)
He gave an oral presentation as follows:
G.Prabhudesai, G.Greeshma, M. Manoharan, H.Mizuta, M.Tabe, and D.Moraru
“Electric Field Effect on Dopant Bands in Silicon 2D Esaki Tunnel Diodes”

 

July 2017
Adnan Afiff gave an oral presentation in QiR2017.
(July 24-27, The Westin Resort Nusa Dua, Bali, Indonesia)
A.Afiff, A.Samanta, T.Hasan, A.Udhiarto, H.Sudibyo, D.Hartanto, M.Tabe and D.Moraru
A Statistical Study on the Formation of A-Few-Dopant Quantum Dots in Highly-Doped Si Nanowire Transistors

Daniel Moraru presented a poster in QiR2017.
(July 24-27, The Westin Resort Nusa Dua, Bali, Indonesia)
D.Moraru, G.Prabhudesai, M.Shibuya, and M.Tabe
Impact of Dopat-Atoms in Inter-band Tunneling in Si Nanoscale Tunnel Diodes

Our group celebrated with international food the farewell of Mrs.Luminita Popa and the successful job finding by Tarik Hasan, Mitsuki Shibuya, and Toru Yamashita.
Thank you for your contributions to our group and congratulations!
   

Professor Michiharu Tabe (Emeritus/Visiting Professor of Research Institute of Electronics, Shizuoka University) introduced his research activities and grant experience in the section “KAKENHI and Me” on the homepage of the Japan Society for the Promotion of Science (JSPS).
Links are below:

In English

In Japanese

June 2017
Invited talk
Daniel Moraru gave an oral presentation in EM-NANO2017.
(June 21, AOSSA,Fukui)
D.Moraru and M.Tabe
Single-Electron Tunneling via Dopant-Quantum-Dots Embedded in Silicon Nano-Transistors and Nano-Diodes

Gaurang Prabhudesai Pramod gave an oral presentation in SNW2017.
(June 4, Rihga Royal Hotel Kyoto, Kyoto)
G.Prabhudesai, G.Greeshma, M.Shibuya, M.Manoharan, H.Mizuta, M.Tabe, and D.Moraru
Inter-band Tunneling Mechanisms via Dopant-induced Energy States

Afiff Adnan Fatahillah gave an oral presentation in SNW2017.
(June 4, Rihga Royal Hotel Kyoto, Kyoto)
A.Afiff, A.Samanta, T.Hasan, A.Udhiarto, D.Hartano, H.Sudibyo, M.Tabe and D.Moraru
Probing the Impact of Donor Quantum Dots with High-Bias Stability Diagrams in Selectively-Doped Si Nanoscale Transistors

Assist.Prof.Bent Weber visits the Research Institute of Electronics and delivers
a lecture on “Electronic devices at the atomic limit”.
Thank you for your visit and for sharing interesting results.

Professor Felicia lacomi visits our University within the Erasmus+ Program and
delivers a number of lectures to students in the Faculty of Engineering and
Graduate School of Science and Technology.
Thank you for your insightful visit and looking forward to seeing you again in our lab.

May 2017
Luminita Popa visits our lab for 3 months within the Erasmus+ Program.
Thank you for joining our group and we hope your experience in Japan is as you expected. Good luck!

April 2017
Takuya Okasaka joins our group as a Graduate (MSc) student. Welcome to our group!

Ryuichiro Tsujimura and Takahiro Negoro join our group as an Undergraduate (B4)student. Welcome to our group!

March 2017
T. Hasan presented a poster in JSAP Spring Meeting.
(Mar. 15, Pacifico Yokohama)
T.Hasan, A.Samanta, A.Afiff, L.T.Anh, M.Manoharan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, and D.Moraru

Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation

G.Prabhudesai presented a poster in JSAP Spring Meeting.
(Mar. 15, Pacifico Yokohama)
G.Prabuhudesai, L.T.Anh, M.Shibuya, M.Manoharan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, and D.Moraru
Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes
    

February 2017
Toru Yamashita and Mitsuki Shibuya completed mid-term presentations of their Master course research. Good luck in the next steps!

Kazuki Sakazaki successfully completed his final presentation and thesis for a Bachelor degree. Congratulations and good luck during the Master course!

Our paper accepted in Applied Physics Letters.
Congratulations to Arup san and all co-authors:
A.Samanta, M.Muruganathan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, and D.Moraru
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors, Appl. Phys. Lett. (2017)

Plenary lecture
Daniel Moraru gave an oral presentation in APM2017
.
(Feb.12, Indian Institute of Science, Bangalore, India)
D.Moraru, A.Samanta, and M.Tabe
Fabrication of Si-Based Nanoscale Transistors and Diodes with Molecular-and Atomic-Level Functionalities

December 2016
Invited lectures (Nov.28-Dec.7)
Daniel Moraru delivered a series of 5 lectures in Al. I. Cuza University, Iasi, dedicated mainly to MSc and PhD students within the Faculty of Physics, on different topics related to “Physics of Electron Transport in Nanoscale“. Thanks to the Erasmus Plus program for the support and invitation. Many thanks to all the participants, students and staff of Al. I. Cuza University (UAIC).

Invited talk
Tabe Michiharu gave an oral presentation in 2016年真空・表面科学合同講演会
(Dec.1, Nagoya Congress Center, Nagoya)
M.Tabe, A.Samanta, and D.Moraru
シリコンナノ構造を基盤としたドーパント原子デバイス

November 2016
Invited talk
Daniel Moraru gave an oral presentation in the 18th Takayanagi Kenjiro Memorial Symposium. (Nov. 15, Shizuoka University, Hamamatsu)
D. Moraru, A. Samanta and M. Tabe
Coupled Dopant-Atoms as Building Blocks for Practical Atomic-Level Tunneling Operation of Si Nanodevices

Daniel Moraru gave an oral presentation in ICNERE/EECCiS2016.
 (Nov. 1, Royal Orchid Garden Hotel, Malang, Indonesia)

D. Moraru, A. Samanta and M. Tabe
Single and Coupled-Dopants as Quantum Dots for Room Temperature Single-Electron Tunneling

October 2016
Afiff Adnan Fatahillah and  Prabhudesai Gaurang Pramod join our group as a Doctoral student (D1). Welcome to our group!

Greeshma Girijakmari joined our group as a Graduate (MSc) student via the ABP-SU program (Asia Bridge Program – Shizuoka University). Welcome to our group!

High school students from India visited our lab. Thank you for your visit and interest!
group-picture

September 2016

Daniel Moraru gave an oral presentation in inter-Academia Conference 2016 (Sept. 26, Warsaw University, Poland)
D. Moraru, M. Muruganathan, L. T. Anh, R. Nuryadi, H. Mizuta, and M. Tabe.
Inter-Band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes

M. Tabe, A. Samanta, and D. Moraru
Toward Room Temperature Operation of Dopant Atom Transistors

Daniel Moraru gave two oral presentations in JSAP 2016 Fall Meeting.

Focused Talk  (Sept. 15, Toki Messe, Niigata)
D. Moraru, A. Samanta, T. Hasan, M. Muruganathan, H. Mizuta, and M. Tabe
Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

Regular talk (Sept. 16, Toki Messe, Niigata)
D. Moraru, M. Shibuya, R. Nuryadi, M. Hori, Y. Ono and M. Tabe
Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes

June 2016
Daniel Moraru gave two oral presentations in 2016 IEEE Silicon Nanoelectronics Workshop (SNW) (Honolulu, USA):

D. Moraru, H. N. Tan, L. T. Anh, M. Manoharan, T. Mizuno, R. Nuryadi, H. Mizuta, and M. Tabe
Enhancement of Inter-Band Tunneling Due to Low-Dimensionality of Lateral 2D Silicon Esaki Diodes

A. Samanta, Y. Takasu, T. Mizuno, D. Moraru, and M. Tabe
Single-Electron Tunneling Operation via A-Few-Donor Quantum Dots in SOI-FETs up to Room Temperature

April 2016
Invited talk

Daniel Moraru gave an invited talk in EMN Meeting on Quantum (Phuket, Thailand):
D. Moraru, A. Samanta, L. T. Anh, M. Manoharan, T. Mizuno, K. Tyszka, R. Jablonski, H. Mizuta, and M. Tabe
Quantum-Tunneling in Dopant-Atom Transistors up to Room Temperature

April 2016
Mitsuki Shibuya continues in our group as a Graduate (M1) student. Thanks and good luck!

April 2016
Toru Yamashita joins our group as a Graduate (M1) student on a collaboration research project (Prof. M. Shimomura). Welcome to our group!

April 2016
Kazuki Sakazaki joins our group as an undergraduate (B4) student. Welcome to our group!

April 2016
Dr. Arup Samanta joins our group as a post-doctoral researcher. Welcome and good luck!

March 2016
Daniel Moraru presented posters during 63rd JSAP Spring Meeting (Tokyo Institute of Technology, Tokyo):

D. Moraru, H. N. Tan, R. Unno, T. Mizuno, M. Manoharan, L. T. Anh, R. Nuryadi, H. Mizuta, and M. Tabe
Effects of phonons and discrete dopants on band-to-band tunneling in two-dimensional Si pn junction diodes

A. Samanta, D. Moraru, Y. Takasu, T. Mizuno, and M. Tabe
Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature

March 2016
Daniel Moraru gave an internet lecture between Al. I. Cuza University (Iasi, Romania) and Shizuoka University (Hamamatsu Campus):
Quantum Tunneling via Atoms in Nanostructures

March 2016
Our paper appeared in Applied Physics Letters.
Congratulations to Tabe-sensei and all co-authors:
M. Tabe, H. N. Tan, T. Mizuno, M. Muraganathan, L. T. Anh, H. Mizuta, R. Nuryadi, and D. Moraru
Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes, Appl. Phys. Lett., vol. 108, no. 9, pp. 093502-1-5 (2016).

February 2016
Mitsuki Shibuya successfully defends his undergraduate thesis. Thanks to Kubono-sensei, Matsubara-sensei and Kubono/Matsubara Group’s members for their support.

December 2015
Book available with a chapter contribution from our group:
D. Moraru and M. Tabe, in “Nanoscale Silicon Devices” (Taylor&Francis Group, edited by S. Oda and D. Ferry) – chapter 8: “Dopant-Atom Silicon Tunneling Nanodevices” (December, 2015, CRC Press), pp. 181-206.

December 2015
Daniel Moraru gave a talk during the European Research(ers’) Day at the EU Delegation in Tokyo (networking event).

December 2015
One paper appeared in International Journal of Technology (indexed in SCOPUS)A.A.N. Gde Sapteka, H. N. Tan, R. Unno, D. Moraru, A. Udhiarto, S. Purwiyanti, M. Tabe, D. Hartanto, and H. Sudibyo, Linear I-V characteristics of highly-doped SOI p-i-n diode for low temperature measurement, International Journal of Technology, vol. 6, No. 3, pp. 318-326 (2015)/indexed in SCOPUS.

December 2015
Our paper appeared in International Journal of Technology (indexed in SCOPUS)
D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and  M.Tabe,
Physics of strongly-coupled dopant-atoms in nanodevices, International Journal of Technology, vol. 6, no. 6, pp. 1057-1064 (2015)/indexed in SCOPUS.

November 2015
Invited talk

Daniel Moraru gave an invited talk in International Conference on Small Science (ICSS 2015) (Phuket, Thailand)
D. Moraru, A. Samanta, T. Mizuno, and M. Tabe
Atomic and molecular effects based on dopants in silicon nanodevices

October 2015
KM Tarik Hasan joined our group as a Graduate (MSc) student via the ABP-SU program (Asia Bridge Program – Shizuoka University). Welcome and good luck!

October 2015
Our paper appeared in Scientific Reports. Congratulations, Arup!
A. Samanta, D. Moraru, T. Mizuno, and M. Tabe, Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors, Scientific Reports, vol. 5, pp. 17377-1-10 (2015).

September 2015
Daniel Moraru gave an oral presentation at 14th International Conference on Global Research and Education in Intelligent Systems (inter-Academia) (Hamamatsu, Japan):
D. Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski, and M. Tabe  Impact of dopant-atoms on electron tunneling into nanoscale-transistor channels

September 2015
Daniel Moraru gave an oral presentation in 76th JSAP Autumn Meeting:
K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe
Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

August 2015
Our paper appeared in Nanoscale Research Letters as a Nano-Review:
D. Moraru, A. Samanta, K. Tyszka, L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe
Tunneling in systems of coupled dopant-atoms in Si nanodevices
Nanoscale Research Letters (Nano Review), vol. 10, pp. 372-1-10 (2015).

August 2015
Daniel Moraru gave an oral presentation in Quality in Research (QiR) Conference (Lombok, Indonesia):
D. Moraru, K. Tyszka, Y. Takasu, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe  Physics of strongly-coupled dopant atoms in nanodevices

August 2015
Invited talk
Our paper appeared in ECS Transactions in extension to an invited-talk presentation in ECS Meeting:
M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, and T. Mizuno
Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes, ECS Transactions, vol. 69, No. 10, pp. 189-195 (2015) (ULSI Process Integration 9 issue).

August 2015
Our paper appeared in Applied Physics Express: K. Tyszka, D. Moraru, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe
Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors, Appl. Phys. Express, vol. 8, pp. 094202_1-4 (2015).

June 2015
Daniel Moraru gave an oral presentation in IEEE Silicon Nanoelectronics Workshop (SNW) 2015 (Kyoto, Japan):
D. Moraru, A. Samanta, Y. Takasu, K. Tyszka, T. Mizuno, R. Jablonski and M. Tabe  Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs

June 2015
Our paper appeared in the Journal of Applied Physics:
K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe
Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy, J. Appl. Phys., vol. 117, no. 24, pp. 244307-1-6 (2015).

April 2015
Invited talk

Daniel Moraru gave an invited talk in EMN Meeting on Quantum Technology (Beijing, China):
D. Moraru, A. Samanta, K. Tyszka. L. T. Anh, M. Manoharan, T. Mizuno, R. Jablonski, H. Mizuta, and M. Tabe
Tunneling via single and coupled dopants in Si nanodevices

April 2015
Mitsuki Shibuya joined our group as an undergraduate student (B4).

March 2015
Daniel Moraru gave an oral presentation in 62nd JSAP Spring Meeting (Tokai Univ., Atsugi):D. Moraru, Y. Takasu, A. Samanta, T. Mizuno, and M. Tabe
Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

February 2015
Invited talk

Daniel Moraru gave an invited talk in 3rd International Conference on Nanoscience and Nanotechnology (ICONN) (SRM Univ., Chennai, India):
D. Moraru, K. Tyszka, A. Samanta, T. Mizuno, R. Jablonski, and M. Tabe
Tunneling transport via dopant-induced quantum dots in silicon nano-devices

January 2015
Daniel Moraru obtained Poster Award – for outstanding poster presentation in “Toward the Future of Advanced Researches in Shizuoka University” Symposium for the paper:
D. Moraru, A. Samanta, Y. Takasu, T. Mizuno, and M. Tabe
Atomic and molecular behavior in tunneling transport via dopants in nano-transistors

January 2015
Another paper appeared in Advanced Materials Research:
K. Tyszka, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe
Kelvin probe force microscope observation of donors’ arrangement in Si transistor channel, Advanced Materials Research, vol. 1117, pp. 82-85 (2015).

January 2015
Our paper appeared in Advanced Materials Research:
D. Moraru, A. Samanta, T. Tsutaya, Y. Takasu, T. Mizuno, and M. Tabe
Tunneling transport in quantum dots formed by coupled dopant atoms
Advanced Materials Research, vol. 1117, pp. 78-81 (2015).

January 2015
Daniel Moraru started work as an Associate Professor in Shizuoka University, Faculty of Engineering, Dept. of Electronics and Materials Science.