静岡大学 電子工学研究所  極限デバイス研究部門・ナノデバイス分野 池田研究室

Achievements

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  • Achievements

発表論文

    2021
  • “Hierarchically ordered macroporous TiO2 architecture via self-assembled strategy for environmental remediation”,S. Athithya, S. Harish, H. IKeda, M. Shimomura, Y. Hayakawa, J. Archana, M. Navaneethan,Chemosphere,288(2021)132236-1-10.
  • “Improved electrochemical performance of Cu2NiSnS4 hierarchical nanostructures as counter electrode in dye sensitized solar cells”,P. Baskaran, K.D. Nisha, S. Harish, R. Ramesh, H. Ikeda, J. Archana, M. Navaneethan,Materials Letters,307(2021)130946-1-4.
  • “Measurement of Thermal Conductivity and Thermal Diffusivity of 1-Dimensional-System Material by Scanning Electron Microscopy and Infrared Thermography”,P. Baskaran, R. Nanao, Y. Yamanashi, M. Sakaida, Y. Suzuki, M. Navaneethan, K.D. Nisha, Y. Hayakawa, H. Inokawa, M. Shimomura, K. Murakami, H. Ikeda,AIP Advances,11(2021)095101-1-6.
  • “Interface effect of graphene oxide in MoS2 layered nanosheets for thermoelectric application”,A.P. Kristy, S. Harish, M. Omprakash, K.D. Nisha, H. Ikeda, M. Navaneethan,Journal of Materials Science: Materials in Electronics,in press.
  • “Reduced Graphene Oxide Wrapped α-Mn2O3/α-MnO2 Nanowires for Electrocatalytic Oxygen Reduction in Alkaline Medium”,Gokuladeepan Periyasamy; Indrajit M Patil; Bhalchandra Kakade; Pandiyarasan Veluswamy; Archana Jayaram; Hiroya Ikeda; Karthigeyan Annamalai,Journal of Materials Science: Materials in Electronics,in press.
  • “Study of CuSbSe2 thin films grown by pulsed laser deposition from bulk source material”,D. Goyal, C.P. Goyal, H. Ikeda, G. Chandrashekaran, P. Malar,Materials Science in Semiconductor Processing,121(2020)105420-1-7.
  • “High performance electrocatalytic and cationic substitution in Cu2ZnSnS4 as a low-cost counter electrode for Pt-free Dye-Sensitized Solar Cells”,P. Baskaran,K.D. Nisha,S. Harish,S. Prabakaran, M. Navaneethan, J. Archana,S. Ponnusamy,C. Muthamizhchelvan, H. Ikeda,Journal of Materials Science,56(2020)4135-4150.
  • “Interface effect and band engineering in Bi2Te3:C and Bi2Te3:Ni-Cu with enhanced thermopower for self-powered wearable thermoelectric generator”,V. Shalini , S. Harish , J. Archana , H. Ikeda , M. Navaneethan,Journal of Alloys and Compounds, in press.
  • “Surface modification of ZnO nanowires with CuO: a tool to realize highly sensitive H2S sensor”,C. P. Goyal, D. Goyal, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy,Physics of the Solid State, in press.
  • 2020
  • “Improvement of Photocatalytic Activity by Zn Doping in Cu2O”,C. P. Goyal, D. Goyal, V. Ganesh, N. S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda and S. Ponnusamy,Physics of the Solid State,62 10(2020)1796-1802.
  • “Growth of large-scale MoS2 nanosheets on double layered ZnCo2O4 for real-time in-situ H2S monitoring in live cells,”,Mani, Veerappan; Selvaraj, Shanthi; Jeromiyas, Nithya; Huang, Sheng-Tung; Ikeda, Hiroya; Hayakawa, Yasuhiro; Ponnusamy, Suru; Salama, Khaled Nabil; C, Muthamizhchelvan,Journal of Materials Chemistry B,8(2020)7453-7465.
  • “Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire”, K. Fauziah, Y. Suzuki, T. Nogita, Y. Kamakura, T. Watanabe, F. Salleh, H. Ikeda, AIP Advances,10 (2020) 075015-1-5.
  • “Effect of Zn doping in CuO octahedral crystals towards structural, optical and gas sensing properties”,C.P. Goyal, D. Goyal, K.R. Sinju, N.S. Ramgir, Y. Shimura, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda, S. Ponnusamy, Crystals, 10 (2020) 188-1-16.
  • “Role of growth temperature in photovoltaic absorber CuSbSe2 deposition through e-beam evaporation”,D. Goyal, C.P. Goyal, H. Ikeda, P. Malar, Materials Science in Semiconductor Processing, 108 (2019) 104874-1-8.
  • 2019
  • “Hierarchical MoS2 Nanosheets – FeCo2O4 Nanowires on Flexible Carbon Cloth Substrate for High-Performance Flexible Supercapacitors”,Selvaraj Shanthi , Hiroya Ikeda , Indrajit M. Patil , Bhalchandra kakade , Yasuhiro Hayakawa ,
    Suru Ponnusamy , Chellamuthu Muthamizhchelvan,Int. J. Electrochem. Sci.,14(2019)5535-5546.
  • “ZnCo2O4 Nanoflowers Grown on Co3O4 Nanowire-Decorated Cu Foams for in Situ Profiling of H2O2 in Live Cells and Biological Media”, Veerappan Mani*, Shanthi Selvaraj, Tie-Kun Peng, Hsin-Yi Lin, Nithiya Jeromiyas, Hiroya Ikeda, Yasuhiro Hayakawa, Suru Ponnusamy, Chellamuthu Muthamizhchelvan*, and Sheng-Tung Huang,ACS Appl. Nano Mater,(2019) 5049-5060.
  • “Influence of TiO2 layer’s nanostructure on its thermoelectric power factor”,F. Salleh, R. Usop, N.S. Saugi, E.Y. Salih, M. Mohamad, H. Ikeda, Faizul S., Khairul A., Suhana S. , Applied Surface Science, 497 (2019) 143736-1-5.
  • “Synergistic effect and enhanced electrical properties of TiO2/SnO2/ZnO nanostructures as electron extraction layer for solar cell application”,S. Prabakaran, K.D. Nisha, S. Harish, J. Archana, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, Y. Hayakawa, Applied Surface Science, 498 (2019) 143702-1-12.
  • “A novel investigation on ZnO nanostructures on carbon fabric for harvesting thermopower on textile”,P. Veluswamy, S. Sathiyamoorthy, P.T. Gomathi, K. Jayabal, R. Kumar, D. Kuznetsov, H. Ikeda, Applied Surface Science, 496 (2019) 143658-1-7.
  • “Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications”,C.P. Goyal, M. Omprakash, M. Navaneethan, T. Takeuchi, Y. Shimura, M. Shimomura, S. Ponnusamy, Y. Hayakawa, H. Ikeda, Journal of Physics Communications, 3 NO.7 (2019) 075007-1-9.
  • “Design and fabrication of PANI/GO system for enhanced room-temperature thermoelectric application”,V. Shalini, M. Navaneethan, S. Harish, J. Archana, S. Ponnusamy, H. Ikeda, Y. Hayakawa, Applied Surface Science, 493 (2019) 1350-1360.
  • “Synergistic interaction of 2D layered MoS2/ZnS nanocomposite for highly efficient photocatalytic activity under visible light irradiation”,S. Harish, Prachi, J. Archana, M. Navaneethan, M. Shimomura, H. Ikeda, Y. Hayakawa, Applied Surface Science, 488 (2019) 36-45.
  • “Dielectric and Magnetic Properties of Nanoporous Nickel Doped Zinc Oxide for Spintronic Applications”,K. Jeyasubramanian, R.V. William, P. Thiruramanathan, G S Hikku, M. Vimal Kumar, B. Ashima, Pandiyarasan Veluswamy, Hiroya Ikeda, Journal of Magnetism and Magnetic Materials, 485 (2019) 27-35.
  • “Effect of phonon-drag contributed Seebeck coefficient on Si-wire thermopile voltage output”, K. Fauziah, Y. Suzuki, Y. Narita, Y. Kamakura, T. Watanabe, F. Salleh and H. Ikeda, IEICE Transactions on Electronics, E102-C NO.6 (2019) 475-478.
  • “Real-time quantification of hydrogen peroxide production in living cells using NiCo2S4@CoS2 heterostructure”,Veerappan Mani, Selvaraj Shanthi, Tie-Kun Peng, Hsin-Yi Lin, Hiroya Ikeda, Yasuhiro Hayakawa, Suru Ponnusamy, Chellamuthu Muthamizhchelvan, Sheng-Tung Huang, Sensors and Actuators B: Chemical, 287 (2019) 124-130.
  • “Fabrication of hierarchical NiCo2S4@CoS2 nanostructures on highly conductive flexible carbon cloth substrate as a hybrid electrode material for supercapacitors with enhanced electrochemical performance”, M. Govindasamy. S. Shanthi, E. Elaiyappillai, S.-F. Wang, P.M. Johnson, H. Ikeda, Y. Hayakawa, S. Ponnusamy, C. Muthamizhchelvan, Electrochimica Acta, 293 (2019) 328-337.
  • 2018
  • “Formation of hierarchical 2D-MoS2 nanostructures over carbon fabric as binder free electrode material for supercapacitor applications”, S. Shanthi, Y. Hayakawa, S. Ponnusamy, H. Ikeda, C. Muthamizhchelvan, Journal of Advances in Physics,15(2018)5943-5949.
  • “Electrodeposited MnO2- carbon cloth supercapacitor electrode material for high power applications”, S. Shanthi, Y. Hayakawa, S. Ponnusamy, H. Ikeda, C. Muthamizhchelvan, Journal of Advances in Physics,14 (2018) 5858-5864.
  • “Modeling, Simulation, Fabrication, and Characterization of a 10-μW/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications”, M. Tomita, S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe, IEEE Transactions on Electron Devices, 65 (2018) 5180-5188.
  • “Thermoelectric characteristics of nanocrystalline ZnO grown on fabrics for wearable power generator”,H. Ikeda, F. Khan, P. Veluswamy, S. Sakamoto, M. Navaneethan, M. Shimomura, K. Murakami, Y. Hayakawa, IOP Conference Series: Journal of Physics,1052 (2018) 012017-1-4.
  • “Alkyd resin based hydrophilic self-cleaning surface with self-refreshing behaviour as single step durable coating”, G.S. Hikku, K. Jeyasubramanian, J. Jacobjose, P. Thiruramanathan, P. Veluswamy, H. Ikeda, Journal of Colloid & Interface Science, 531 (2018) 628-641.
  • “Impact of MgO thickness on the perpendicular magnetic anisotropy of Mo/Co2FeAl/MgO/Mo multilayers with improved annealing stability”, L. Saravanan, M. Manivel Raja, D. Prabhu, V. Pandiyarasan, H. Ikeda, H. A. Therese, Materials Research Bulletin, in press.
  • “Sono-synthesis approach of reduced graphene oxide for ammonia vapour detection at room temperature”, Pandiyarasan Veluswamy, Suhasini Sathiyamoorthy, P. Santhoshkumar, Gopaku Karunakaran, Chang Woo Lee, Denis Kuznetsov, Jeyasubramanian Kadarkaraithangam, Ikeda Hiroya, Ultrasonics Sonochemistry, 48 (2018) 555-566.
  • “Influence of Au on Ge crystallization and its thermoelectric properties in a Au-induced Ge crystallization technique”, S. Shanthi, K. Faizan, S. Nishino, M. Omprakash, T. Takeuchi, Y. Shimura, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda, Journal of Advances in Physics, 14 (2018) 2-5460-5466.
  • “Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate”,R. Usop, N. K. A. Hamed, M. M. I. Megat Hasnan, H. Ikeda, M. F. M. Sabri, M. K. Ahmad, S. M. Said and F. Salleh, IOP Conference Series: Materials Science and Engineering,342 NO.012051 (2018) 012051-1-6.
  • “Recent Progress in Nanostructured Zinc Oxide Grown on Fabric for Wearable Thermoelectric Power Generator with UV Shielding”,Pandiyarasan Veluswamy, Suhasini Sathiyamoorthy, Ikeda Hiroya, Manikandan Elayaperumal and Malik Maaza, Wearable Technologies (Ed. J. H. Ortiz, IntechOpen) , (2018) 139-160
  • “Ultra-fast photocayalytic and dye-sensitized solar cell performances of mesoporous TiO2 nanospheres”, J. Archana, S. Harish, S. Kavirajan, M. Navaneethan, S. Ponnusamy, M. Shimomura, C. Muthamizhchelvan, H. Ikeda, Y. Hayakawa, Applied Surface Science, 449 (2018) 729-735.
  • “Enhanced Photocatalytic Degradation and Hydrogen Production activity of In Situ grown TiO2 coupled NiTiO3 Nanocomposites”, Sandeep Kumar Lakhera, Hafeez Yusuf Hafeez, Pandiyarasan Veluswamy, V. Ganesh, Anish Khan, Hiroya Ikeda, Bernaurdshaw Neppolian, Applied Surface Science, 449 (2018) 790-798.
  • “Tailoring the functional properties of polyurethane foam with dispersions of carbon nanofiber for power generator applications”, Suhasini Sathiyamoorthy, Greeshma Girijakumrai, Prashanth Kannan, Kathirvel Venugopal, Saranya Thiruvottriyur Shanmugam, Pandiyarasan Veluswamy, Karolien De Wael, Hiroya Ikeda, Applied Surface Science, 449 (2018) 507-513.
  • “Perpendicular magnetic anisotropy in Mo/Co2FeAl0.5Si0.5/MgO/Mo multilayers with optimal Mo buffer layer thickness”, Helen Annal Therese, Saravanan Lakshmanan, Manivel Raja Muthuvel, Prabhu Delhi Babu, Pandiyarasan Veluswamy, Ikeda Hiroya, Journal of Magnetism and Magnetic Materials, 454 (2018) 267-273.
  • “Simulation of Temperature Distribution under Periodic Heating for Analysis of Thermal Diffusivity in Nanometer-Scale Thermoelectric Materials”, N. Yamashita, Y. Ota, F. Salleh, M. Navaneethan, M. Shimomura, K. Murakami and H. Ikeda, IEICE Trans. Electron., E101-C NO.5 (2018) 347-350.
  • “Seebeck Coefficient of Flexible Carbon Fabric for Wearable Thermoelectric Device”, Faizan Khan, Veluswamy Pandiyarasan, Shota Sakamoto, Mani Navaneethan, Masaru Shimomura, Kenji Murakami, Yasuhiro Hayakawa, Hiroya Ikeda, IEICE Transactions on Electronics, E101-C NO.5 (2018) 343-346.
  • “Low thermal conductivity of bulk amorphous Si1-xGex containing nano-sized crystalline particles synthesized by ball milling process”, Omprakash Muthusamy, Shunsuke Nishino, Swapril Ghodke, Manabu Inukai, Rober Sobota, Masahiro Adachi, Makoto Kiyama, Yoshiyuki Yamamoto, Tsunehiro Takeuchi, Harish Santhanakrishman, Hiroya Ikeda, Yasuhiro Hayakawa, Journal of Electronic Materials, 47, 6 (2018) 3260-3266.
  • “Effect of pH and annealing temperature on the properties of tin oxide nanoparticles prepared by sol-gel method”, Mohana Priya Subramaniam, Geetha Arunachalam, Ramamurthi Kandasamy, Pandiyarasan Veluswamy, Hiroya Ikeda, Journal of Materials Science: Materials in Electronics,29 (2017) 658-666.
  • 2017
  • “Synergetic effect of CuS@ZnS nanostructures on photocatalytic degradation of organic pollutant under visible light irradiation”, S. Harish, J. Archana, M. Navaneethan, S. Ponnusamy, Ajay Singh, Vinay Gupta, D. K. Aswal, H. Ikeda and Y. Hayakawa, RSC Adv., 7 (2017) 34366-34375.
  • “0.8 V nanogenerator for mechanical energy harvesting using bismuth titanate-PDMS nanocomposite”, N. Abinnas, P. Baskaran, S. Harish, R. Sankar Ganesh, M. Navaneethan, K.D. Nisha, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 362-368.
  • “Fabrication of hierarchical ZnO nanostructures on cotton fabric for wearable device applications”, V. Pandiyarasan, S. Suhasini, J. Archana, M. Navaneethan, M. Abhijit, Y. Hayakawa, H. Ikeda, Appl. Surf. Sci., 418 (2017) 352-361.
  • “Influence of organic ligands on the formation and functional properties of CdS nanostructures”, K.D. Nisha, M. Navaneethan, S. Harish, J. Archana, S. Ponnusamy, C. Muthamizhchelvan, D.K. Aswal, M. Shimomura, H. Ikeda, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 346-351.
  • “Enhancement of power factor by energy filtering effect in hierarchical BiSbTe3 nanostructures for thermoelectric applications”, M. Sabarinathan, M. Omprakash, S. Harish, M. Navaneethan, J. Archana, S. Ponnusamy, H. Ikeda, T. Takeuchi, C. Muthamizhchelvan, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 246-251.
  • “Hydrothermal growth of highly monodispersed TiO2 nanoparticles: Functional properties and dye-sensitized solar cell performance”, M. Navaneethan, S. Nithiananth, R. Abinaya, S. Harish, J. Archana, L. Sudha, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 186-193.
  • “Functional properties and enhanced visible light photocatalytic performance of V3O4 nanostructures decorated ZnO nanorods”, S. Harish, M. Sabarinathan, J. Archana, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 171-178.
  • “Synthesis of ZnO/SrO nanocomposites for enhanced photocatalytic activity under visible light irradiation”, S. Harish, M. Sabarinathan, J. Archana, M. Navaneethan, K.D. Nisha, S. Ponnusamy, V. Gupta, C. Muthamizhchelvan, D.K. Aswal, H. Ikeda, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 147-155.
  • “Controlled structural and compositional characteristic of visible light active ZnO/CuO photocatalyst for the degradation of organic pollutant”, S. Harish, J. Archana, M. Sabarinathan, M. Navaneethan, K.D. Nisha, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, D.K. Aswal, Y. Hayakawa, Appl. Surf. Sci., 418 (2017) 103-112.
  • “Zns quantum dots impregnated-mesoporous TiO2 nanospheres for enhanced visible light induced photocatalytic application”, S. Harish, M. Sabarinathan, A. Periyanayaga Kristy, J. Archana, M. Navaneethan, H. Ikeda and Y. Hayakawa, RSC Adv., 7 (2017) 26446-26457.
  • “Highly efficient visible-light photocatalytic activity of MoS2-TiO2 mixtures hybrid photocatalyst and functional properties”, M. Sabarinathan, S. Harish, J. Archana, M. Navaneethan, H. Ikeda and Y. Hayakawa, RSC Adv., 7 (2017) 24754-24763.
  • “Phonon-drag effect on Seebeck coefficient in co-doped Si wire with submicrometer-scaled cross section”, Y. Suzuki, F. Salleh, Y. Kamakura, M. Shimomura, H. Ikeda, IEICE Trans. Electron., E100-C NO.5 (2017) 486-489.
  • “Phonon-drag contribution to Seebeck coefficient in p-type Si, Ge and Si1-xGex”, V. Manimuthu, M. Omprakash, M. Arivanandhan, F. Salleh, Y. Hayakawa, H. Ikeda, IEICE Trans. Electron., E100-C NO.5 (2017) 482-485.
  • “Fabrication of high quality, thin Ge-on-insulator layers by direct wafer-bonding for nanostructured thermoelectric devices”, V. Manimuthu, M. Arivanandhan, F. Salleh, Y. Shimura, Y. Hayakawa, H. Ikeda, Semicond. Sci. Tech., 32 (2017) 035021-1-10.
  • “Morphology dependent thermal conductivity of ZnO nanostructures prepared via a green approach”, P. Veluswamy, S. Sathiyamoorthy, K.H. Chowdary, O. Muthusamy, K. Krishnamoorthy, T. Takeuchi, H. Ikeda, J. Alloys and Compounds, 695 (2017) 888-894.
  • “Hydrothermal growth of reduced graphene oxide on cotton fabric for enhanced ultraviolet protection applications”, V. Pandiyarasan, J. Archana, A. Pavithra, V. Ashwin, M. Navaneethan, Y. Hayakawa, H. Ikeda, Mater. Lett., 188 (2017) 123-126.
  • “Incorporation of ZnO and their composite nanostructured material into a cotton fabric platform for wearable device applications”, V. Pandiyarasan, S. Suhasini, F. Khan, A. Ghosh, M. Abhijit, Y. Hayakawa, H. Ikeda, Carbohydr. Polym., 157 (2017) 1801-1808.
  • 2016
  • “Controlled exfoliation of monodispersed MoS2 layered nanostructures by a ligand-assisted hydrothermal approach for the realization of ultrafast degradation of an organic pollutant”, M. Sabarinathan, S. Harish, J. Archana, M. Navaneethan, H. Ikeda, Y. Hayakawa, RSC Adv. 6 (2016) 109495-109505.
  • “Incorporation of Polyaniline on Graphene – Related Materials/Cotton-Fabric by Interfacial Polymerization Pathway for Wearable Device”, P. Veluswamy and H. Ikeda, Asian J. Adv. Basic Sci., 4(2) (2016) 94-97.
  • “Enhanced visible light induced photocatalytic activity on the degradation of organic pollutants by SnO nanoparticle decorated hierarchical ZnO nanostructures”, S. Harish, J. Archana, M. Navaneethan, A. Silambarasan, K. D. Nisha, S. Ponnusamy, C. Muthamizhchelvan, H. Ikeda, D.K. Aswal, Y. Hayakawa, RSC Adv. 6 (2016) 89721-89731.
  • “Highly efficient dye-sensitized solar cell performance from template derived high surface area mesoporous TiO2 nanospheres”,J. Archana, S. Harish, M. Sabarinathan, M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, M. Shimomura, H. Ikeda, D.K. Aswal, Y. Hayakawa, RSC Adv. 6 (2016) 68092-68099.
  • “Reduction of the surface roughness of Ge-on-insulator layers up to sub-nanometer range by chemical mechanical polishing”, V. Manimuthu, M. Arivanandhan, Y. Hayakawa and H. Ikeda, J. Adv. Phys., 11 (2016) 4088-4092.
  • “Vertical gradient solution growth of N-type Si0.73Ge0.27 bulk crystals with homogeneous composition and its thermoelectric properties”, M. Omprakash, M. Arivanandhan, M. Sabarinathan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuok, D. K. Aswal, S. Bhattacharya, Y. Inatomi, Y.Hayakawa, J. Crystal Growth, 442 (2016) 102-109.
  • 2015
  • “Seebeck coefficient of SOI layer induced by phonon transport”, F. Salleh, T. Oda, Y. Suzuki, Y. Kamakura and H. Ikeda, MAKARA J. Technol. Series, 19 (2015) 1-4.
  • “Phonon-drag contribution to Seebeck coefficient of Ge-on-insulator substrate fabricated by wafer bonding process”, V. Manimuthu, S. Yoshida, Y. Suzuki, F. Salleh, M. Arivanandhan, Y. Kamakura, Y. Hayakawa and H. Ikeda, MAKARA J. Technol. Series, 19 (2015) 21-24.
  • “Construction of a novel method of measuring thermal conductivity for nanostructures”, H. Ikeda, S. Yoshida, Y. Suzuki, V. Maninuthu, F. Salleh, F. Kuwahara, M. Shimomura and K. Murakami, MAKARA J. Technol. Series, 19 (2015) 11-14.
  • “Seebeck coefficient of Ge-on-insulator layers fabricated by direct wafer bonding process”, V. Manimuthu, M. Omprakash, Y. Suzuki, F. Salleh, M. Arivanandhan, Y. Kamakura, Y. Hayakawa and H. Ikeda, Adv. Mater. Res., 1117 (2015) 94-97.
  • “Study on phonon drag effect and phonon transport in thin Si-on-insulator layers”, H. Ikeda, T. Oda, Y. Suzuki, Y. Kamakura and F. Salleh, Adv. Mater. Res., 1117 (2015) 86-89.
  • “High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method”, M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, D. Aswal, S. Bhattacharya, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu and Y. Hayakawa, J. Crystal Growth & Design, 15 (2015) 1380-1388.
  • 2014
  • “Phonon drag effect on Seebeck coefficient of ultrathin P-doped Si-on-insulator layers”, F. Salleh, T. Oda, Y. Suzuki, Y. Kamakura and H. Ikeda, Appl. Phys. Lett., 105 (2014) 102104-1-4.
  • “Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated x-ray intensities”, M. Omprakash, M. Arivanandhan, R. A. Kumar, H. Mori, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, S. M. Babu, Y. Inatomi and Y. Hayakawa, J. Alloys and Compounds, 590 (2014) 96-101.
  • 2013
  • “Variation of Seebeck coefficient in ultrathin Si layer by tuning its Fermi energy”, F. Salleh, Y. Suzuki, K. Miwa and H. Ikeda, QiR (Quality in Research) Int. Conf. on, (2013) 47-50.
  • “KFM evaluation of Seebeck coefficient in thin SOI layers”, H. Ikeda, Y. Suzuki, K. Miwa and F. Salleh, QiR (Quality in Research) Int. Conf. on, (2013) 35-38.
  • “Modulation of Seebeck coefficient for silicon-on-insulator layer induced by bias-injected carriers”, F. Salleh, Y. Suzuki, K. Miwa and H. Ikeda, Appl. Phys. Lett., 103 (2013) 062107-1-3.
  • “Development of Seebeck-coefficient measurement systems using Kelvin-probe force microscopy”, K. Miwa, F. Salleh and H. Ikeda, MAKARA J. Technol. Series, 17 (2013) 17-20.
  • 2012
  • “Variation of SOI Seebeck coefficient by applying an external bias”, F. Salleh, K. Miwa and H. Ikeda, J. Adv. Res. Phys., 3 (2012) 021207-1-4.
  • “Improvement in measurement system of Seebeck coefficient by KFM”, K. Miwa, F. Salleh and H. Ikeda, J. Adv. Res. Phys., 3 (2012) 021205-1-4.
  • “Theoretical study on the stability of the single-electron-pump refrigerator with respect to thermal and dimensional fluctuations”, H. Ikeda and F. Salleh, IEICE Trans. Electron., E95-C (2012) 924-927.
  • 2011
  • “Growth of homogeneous polycrystalline Si1-xGex and Mg2Si1-xGex for thermoelectric application”, Y. Hayakawa, M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, C. Wen, Y. Kubota, T. Nakamura, S. Bhattacharya, D. K. Aswal, S. M. Babu, Y. Inatomi and H. Tatsuoka, Thin Solid Films, 519 (2011) 8532-8537.
  • “Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications”, M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, T. Tatsuoka, D. K. Aswal, Y. Inatomi and Y. Hayakawa, J. Cryst. Growth, 318 (2011) 324-327.
  • “A theoretical study of a novel single-electron refrigerator fabricated from semiconductor materials”, H. Ikeda and F. Salleh, Jpn. J. Appl. Phys., 50 (2011) 06GF20-1-4.
  • “Seebeck coefficient of heavily P-doped Si calculated from an alteration in electronic density of states”, F. Salleh and H. Ikeda, J. Electron. Mater., 40 (2011) 903-906.
  • “Influence of impurity band on Seebeck coefficient in heavily-doped Si”, F. Salleh and H. Ikeda, Adv. Mater. Res., 222 (2011) 197-200.
  • “A novel refrigerator device using single-electron pump applicable to SOI wafers”, H. Ikeda and F. Salleh, Adv. Mater. Res., 222 (2011) 66-69.
  • 2010
  • “Influence of Heavy Doping on Seebeck Coefficient in Silicon-on-Insulator”, H. Ikeda and F. Salleh, Appl. Phys. Lett., 96 (2010) 012106-1-3.
  • 2009
  • “Impurity-Concentration Dependence of Seebeck Coefficient in Silicon-on-Insulator Layers”, F. Salleh, K. Asai, A. Ishida, H. Ikeda, J. Autom. Mobile Rob. Intell. Syst., 3, (2009) 134-136.
  • “Seebeck Coefficient Measurement by Kelvin-Probe Force Microscopy”, H. Ikeda, F. Salleh, K. Asai, J. Autom. Mobile Rob. Intell. Syst., 3, (2009) 49-51.
  • “Seebeck Coefficient of Ultrathin Silicon-on-Insulator Layers”, F. Salleh, K. Asai, A. Ishida and H. Ikeda, Appl. Phys. Express, 2 (2009) 071203-1-3.
  • 2008
  • “Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection”, M. Tabe, R. Nuryadi, D. Moraru, Z.A. Burhanudin, K. Yokoi, H.Ikeda, Acta Physica Polonica A, 113 (2008) 811-814.
  • 2007
  • “Manipulation of single-electrons in Si nanodevices -Interplay with photons and ions”, M. Tabe, R. Nuryadi, Z. A. Burhanudin, D. Moraru, K. Yokoi and H. Ikeda, Recent Advances in Mechatronics-The Proceedings of Mechatronics 2007, Springer (2007) 500-504.
  • 2006
  • “Fowler-Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures”, Daniel Moraru, Hiroshi Kato, Seiji Horiguchi, Yasuhiko Ishikawa, Hiroya Ikeda and Michiharu Tabe, Jpn. J. Appl. Phys., 45 (2006) L316-L318.
  • “Numerical Study of Turnstile Operation in Random-Multidot-Channel Field-Effect Transistor”, Hiroya Ikeda and Michiharu Tabe, J. Appl. Phys., 99 (2006) 073705.
  • 2005
  • “Current Fluctuation in Single-Hole Transport Through a Two-Dimensional Si Multidot”, Ratno Nuryadi, Hiroya Ikeda, Yasuhiko Ishikawa and Michiharu Tabe, Appl. Phys. Lett., 86 (2005) 133106.
  • “Potential-Well-Roughness-Induced Transition from Resonant Tunneling to Single-Electron Tunneling in Si/SiO2 Double-Barrier Structure”, Yasuhiko Ishikawa, Hiroya Ikeda and Michiharu Tabe, Appl. Phys. Lett., 86 (2005) 013508.
  • 2004
  • “Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor”, Hiroya Ikeda, Ratno Nuryadi, Yasuhiko Ishikawa and Michiharu Tabe, Jpn. J. Appl. Phys., 43 (2004) L759-L761.
  • “Pulsed laser deposition and analysis for structural and electrical properties of HfO2-TiO2 composite films”, Kazutaka Honda, Akira Sakai, Mitsuo Sakashita, Hiroya Ikeda, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 43 (2004) 1571-1576.
  • 2003
  • “Ambipolar Coulomb blockade characteristics in a two-dimensional Si multidot device”, Ratno Nuryadi, Hiroya Ikeda, Yasuhiko Ishikawa and Michiharu Tabe, IEEE Trans. on Nanotechnology, 2 (2003) 231-235.
  • “Reactive deposition epitaxy of CoSi2 films on clean and oxygen-adsorbed Si(001) surfaces”, Yukihiro hayashi, Akira Sakai, Hiroya Ikeda, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 42 (2003) 7482-7488.
  • “Surface and interface smoothing of epitaxial CoSi2 films by solid-phase epitaxy using adsorbed oxygen layers and two-step growth on Si(001) surfaces”, Yukihiro Hayashi, Akira Sakai, Hiroya Ikeda, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 42 (2003) 7039-7044.
  • “Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure”, Yasuhiko Ishikawa, Yasuhiro Imai, Hiroya Ikeda and Michiharu Tabe, Appl. Phys. Lett., 83 (2003) 3162-3164.
  • “Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage”, Hiroya Ikeda, Masanori Iwasaki, Yasuhiko Ishikawa and Michiharu Tabe, Appl. Phys. Lett., 83 (2003) 1456-1458.
  • “Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100)”, Osamu Nakatsuka, Hiroyuki Onoda, Emi Okada, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Appl. Surf. Sci., 216 (2003) 174-180.
  • “Local leakage current of HfO2 thin films characterized by conducting atomic force microscopy”, Hiroya Ikeda, Tomokazu Goto, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 42 (2003) 1949-1953.
  • “Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen”, Ryoya Takahashi, Yasushi Kobayashi, Hiroya Ikeda, Mitsuo Sakashita, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 42 (2003) 1966-1970.
  • 2002
  • 「SOI基板を用いたシリコン量子トンネルデバイス」池田浩也、水野武志、石川靖彦、田部道晴、応用物理学会分科会シリコンテクノロジー、46 (2002) 60-64.
  • “Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition”, Hiroya Ikeda, Satoru Goto, Kazutaka Honda, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 41 (2002) 2476-2479.
  • “Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen”, Hiroya Ikeda, Daisuke Matsushita, Shinya Naito, Kenji Ohmori, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 41 (2002) 2463-2467.
  • “Electrical properties and solid-phase reactions in Ni/Si(100) contacts”, Yoshinori Tsuchiya, Akihiro Tobioka, Osamu Nakatsuka, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 41 (2002) 2450-2454.
  • “Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts”, Akihiro Tobioka, Yoshinori Tsuchiya, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Mat. Sci. Eng., B89 (2002) 373-377.
  • “Characterization of defect traps in SiO2 thin films influence of temperature on defects”, J.-Y. Rosaye, N, Kurumado, S. Sakashita, H. Ikeda, A. Sakai, P. Mialhe, J.-P. Charles, S. Zaima and Y. Yasuda, Microelectron. J., 33 (2002) 429-436.
  • 2001
  • “Local electric characteristics of ultra-thin SiO2 films formed on Si(100) surfaces”, Hiroya Ikeda, Norihiro Kurumado, Kenji Ohmori, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Surf. Sci., 493 (2001) 653-658.
  • “Reduction of threading dislocation density in SiGe layers on Si(001) using a two-step strain-relaxation procedure”, Akira Sakai, Ken Sugimoto, Takeo Yamamoto, Masahisa Okada, Hiroya Ikeda, Yukio Yasuda and Shigeaki Zaima, Appl. Phys. Lett., 79 (2001) 3398-3400.
  • “Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces”, Akira Sakai, Yuji Torige, Masahisa Okada, Hiroya Ikeda, Yukio Yasuda and Shigeaki Zaima, Appl. Phys. Lett., 79 (2001) 3242-3244.
  • “Atomic-scale characterization of nitridation processes on Si(100)-2×1 surfaces by radical nitrogen”, Daisuke Matsushita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 40 (2001) 2827-2829.
  • “Microscopic observation of x-ray irradiation damage in ultra-thin SiO2 films”, Kenji Ohmori, Tomokazu Goto, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 40 (2001) 2823-2826.
  • “Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy”, Yukihiro Hayashi, Tamiyu Katoh, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima and Yukio Yasuda, Jpn. J. Appl. Phys., 40 (2001) 269-275.
  • “Electrical properties of Ni silicide/silicon contact”, Yoshiki Tsuchiya, Osamu Nakatsuka, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Advanced Metallization and Interconnect Systems for ULSI Applications in 2001, edited by A.J. Mckerrow, Y. S.-Diamand, S. Zaima and T. Ohba (Materials Research Society, Warrendale, PA, 2001) 679-684.
  • “Characterization of defect traps in SiO2 thin films”, J.-Y. Rosaye, P. Mialhe, J.-P. Charles, S. Sakashita, H. Ikeda, A. Sakai, S. Zaima and Y. Yasuda, Active and Passive Elec. Comp., 24 (2001) 169-175.
  • 2000
  • “Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O3 films formed by pulsed laser deposition”, Hirotake Fujita, Satoru Goto, Mitsuo Sakashita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 39 (2000) 7035-7039.
  • “The origin and the creation mechanism of positive charges in silicon oxide films”, Kenji Ohmori, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface, (2000) 345-352.
  • “A study on initial oxidation of Si(100)-2×1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS)”, Masaki Wasekura, Makoto Higashi, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 159-160 (2000) 35-40.
  • “Selectivity for O adsorption position on dihydride Si(100) surfaces”, Hiroyuki Kageshima, Kenji Shiraishi, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 159-160 (2000) 14-18.
  • “Nucleation and growth of Ge on Si(111) in solid phase epitaxy”, Isao Suzumura, Masahisa Okada, Akiyoshi Muto, Yuji Torige, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Thin Solid Films, 369 (2000) 116-120.
  • “A study on the local bonding structures of oxidized Si(111) surfaces”, Kenji Sato, Yasuyuki Nakagawa, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Thin Solid Films, 369 (2000) 277-280.
  • “Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2×1 surfaces”, Daisuke Matsushita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda, Thin Solid Films, 369 (2000) 293-296.
  • 「シリコン表面の初期酸化と水素」安田幸夫、池田浩也、財満鎭明、真空、43 (2000) 440.
  • 1999
  • “Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100)”, Yukihiro Hayashi, Yamato Matsuoka, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Thin Solid Films, 343-344 (1999) 562-566.
  • “Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELS”, Hiroya Ikeda, Yasuyuki Nakagawa, Kenji Sato, Makoto Higashi, Shigeaki Zaima, Yukio Yasuda, Thin Solid Films, 343-344 (1999) 408-411.
  • “Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model”, Hiroya Ikeda, Yasuyuki Nakagawa, Shigeaki Zaima, Yoshihiro Ishibashi, Yukio Yasuda, Jpn. J. Appl. Phys., 38 (1999) 3422-3425.
  • “Influences of impurities on oxidation processes of Si(100) substrates”, Hiroya Ikeda, Yasuyuki Nakagawa, Kenji Sato, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 38 (1999) 2345-2348.
  • “Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces”, Yukihiro Hayashi, Motoki Yoshinaga, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Surf. Sci., 438 (1999) 116-122.
  • 「水素終端シリコン表面の酸化と水素の役割」財満鎭明、池田浩也、安田幸夫、表面科学、20 (1999) 703-710.
  • 「シリコン酸化膜の局所構造緩和過程の研究」財満鎭明、池田浩也、安田幸夫、真空、42 (1999) 25-30.
  • 1998
  • “Hydrogen effects on heteroepitaxial growth of Ge films on Si(111) surfaces by solid phase epitaxy”, Masahisa Okada, Akiyoshi Muto, Isao Suzumura, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 37 (1998) 6970-6973.
  • “A new growth method of epitaxial cobalt disilicide on Si(100)”, Yukihiro Hayashi, Yamato Matsuoka, Tamiyu Katoh, Hiroshi Ikegami, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, N. Kobayashi (Materials Research Society, Warrendale, PA, 1998) 663-668.
  • “Electrical properties and interfacial reactions at Co/Si(100) contacts”, Hirotaka Iwano, Yasumitsu Isobe, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, N. Kobayashi (Materials Research Society, Warrendale, PA, 1998) 669-675.
  • “Effects of atomic hydrogen on growth behavior of Si films by Si2H6-source molecular beam epitaxy”, Yukio Yasuda, Tsuyoshi Matsuyama, Kiyohiko Sato, Masaaki Kondo, Hiroya Ikeda, Shigeaki Zaima, Thin Solid Films, 317 (1998) 48-51.
  • “Local bonding structures of SiO2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopy”, Yasuyuki Nakagawa, Makoto Higashi, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 130-132 (1998) 192-196.
  • “Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy”, Akiyoshi Muto, Masahisa Okada, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 130-132 (1998) 321-326.
  • “Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy”, Masahisa Okada, Akiyoshi Muto, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, J. Crystal Growth, 188 (1998) 119-124.
  • 1997
  • 「ヘテロエピタキシャル成長の考え方:Ge/Si」安田幸夫、池田浩也、アドバンストエレクトロニクスシリーズI-18 結晶成長の基礎,西永頌編著,8.5節,培風館 (1997) 240-260.
  • “Hydrogen effects on Si1-xGex/Si heteroepitaxial growth by Si2H6- and GeH4-source molecular beam epitaxy”, Masahisa Okada, Masaaki Kondo, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 36 (1997) 7665-7668.
  • “Interfacial reactions and electrical characteristics in Ti/SiGe/Si(100) contact systems”, Jun Kojima, Shigeaki Zaima, Hideaki Shinoda, Hirotaka Iwano, Hiroya Ikeda, Yukio Yasuda, Appl. Surf. Sci., 117/118 (1997) 317-320.
  • “Thermal stability of ultra-thin CoSi2 films on Si(100)-2×1 surfaces”, Hiroshi Ikegami, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 117/118 (1997) 275-279.
  • “Initial oxidation of Si(100)-(2×1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy”, Kenji Ohmori, Hiroya Ikeda, Hirotaka Iwano, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 117/118 (1997) 114-118.
  • “Initial oxidation of H-terminated Si(111) surfaces studied by HREELS”, Hiroya Ikeda, Yasuyuki Nakagawa, Minoru Toshima, Shinya Furuta, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 117/118 (1997) 109-113.
  • “Effects of H-termination on initial oxidation process”, Yukio Yasuda, Hiroya Ikeda, Shigeaki Zaima, Appl. Surf. Sci., 113/114 (1997) 579-584.
  • “The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM”, Masahisa Okada, Takaya Shimizu, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 113/114 (1997) 349-353.
  • 1996
  • 「水素終端シリコン(100)表面の酸化初期過程」財満鎭明、池田浩也、安田幸夫、応用物理、65 (1996) 1237-1242.
  • “Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces”, Hiroya Ikeda, Koji Hotta, Shinya Furuta, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 104/105 (1996) 354-358.
  • “Oxide formation on Si(100)-2×1 surfaces studied by scanning tunneling microscopy / scanning tunneling spectroscopy”, Hiroshi Ikegami, Kenji Ohmori, Hiroya Ikeda, Hirotaka Iwano, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 35 (1996) 1593-1597.
  • “Electrical properties of metal/Si1-xGex/Si(100) heterojunctions”, Hideaki Shinoda, Motohiro Kosaka, Jun Kojima, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 100/101 (1996) 526-529.
  • “Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy”, Hiroya Ikeda, Tohru Yamada, Koji Hotta, Shigeaki Zaima, Yukio Yasuda, Appl. Surf. Sci., 100/101 (1996) 431-435.
  • “Study on CoSi2 formation on Si(100)-2×1 surfaces by scanning tunneling microscopy and scanning tunneling spectroscopy”, Hiroshi Ikegami, Hiroya Ikeda, Shigeaki Zaima, Yukio Yasuda, Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, edited by R. C. Ellwanger, S. -Q. Wang (Materials Research Society, Pittsburgh, PA, 1996) 511-516.
  • “Orientation dependence of the initial oxidation of H-terminated Si surfaces studied by high-resolution electron energy loss spectroscopy”, Hiroya Ikeda, Koji Hotta, Shinya Furuta, Shigeaki Zaima, Yukio Yasuda, Proc. of the 3rd Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface, (1996) 72-80.
  • “Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy”, Hiroya Ikeda, Koji Hotta, Shinya Furuta, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 35 (1996) 1069-1072.
  • 「水素終端シリコン表面の初期酸化過程と局所構造」池田浩也、財満鎭明、安田幸夫、表面科学、 17 (1996) 141-147.
  • 「水素終端シリコン表面の初期酸化過程」池田浩也、財満鎭明、安田幸夫、固体物理、31 (1996) 696-702.
  • 1995
  • “Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy”, Shigeaki Zaima, Kiyohiko Sato, Takeshi Kitani, Tsuyoshi Matsuyama, Hiroya Ikeda, Yukio Yasuda, J. Crystal Growth, 150 (1995) 944-949.
  • “Improvements of electrical characteristics of Hf/p-Si(100) interfaces by H-termination”, Shigeaki Zaima, Jun Kojima, Masakazu Hayashi, Hiroya Ikeda, Hirotaka Iwano, Yukio Yasuda, Jpn. J. Appl. Phys., 34 (1995) 741-745.
  • “Studies on reaction processes of hydrogen and oxygen atoms with H2O-adsorbed Si(100) surfaces by high-resolution electron energy loss spectroscopy”, Hiroya Ikeda, Koji Hotta, Tohru Yamada, Shigeaki Zaima, Yukio Yasuda, Jpn. J. Appl. Phys., 34 (1995) 2191-2195.
  • “Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy”, Hiroya Ikeda, Koji Hotta, Tohru Yamada, Shigeaki Zaima, Hirotaka Iwano, Yukio Yasuda, J. Appl. Phys., 77 (1995) 5125-5129.

著書・翻訳

    2018
  • 「8章 どこまで飛ぶかな?ガウスロケット,13章 サイエンスアドベンチャー」 池田浩也, 続・作って,遊んで,理科がわかる!身近な素材で楽しむ工作教室(高井吉明編著,日本評論社), (2018)
  • “Recent Progress in Nanostructured Zinc Oxide Grown on Fabric for Wearable Thermoelectric Power Generator with UV Shielding”, Pandiyarasan Veluswamy, Suhasini Sathiyamoorthy, Hiroya Ikeda, Manikandan Elayaperumal and Malik Maaza, Wearable Technologies (Ed. J. H. Ortiz, IntechOpen, 2018) 139-160.
  • 2017
  • 「第1章第6節 シリコンナノ構造による熱電変換デバイスの高性能化」 池田浩也, マイクロ・ナノスケールの次世代熱制御技術 フォノンエンジニアリング(エヌ・ティー・エス), (2017) 75-87.
  • 2006
  • “Resonant Tunneling in Si Nanodevices”, Michiharu Tabe, Hiroya Ikeda and Yasuhiko Ishikawa, Silicon Nanoelectronics (Eds: D. Ferry and S. Oda, CRC Press, 2006) 133-154.
  • 2000
  • “Electrical properties of carbon nanotubes: Spectroscopy, localization and electrical breakdown”, Phaedon Avouris, Richard Martel, Hiroya Ikeda, Mark Hersam, Herbert R. Shea, Alain Rochefort, Science and Application of Nanotubes, eds. D. Tomanek and R. J. Enbody, as a volume in the Fundamental Materials Research Series, ed. M. F. Thorpe (Kluwer Academic/Plenum Publishers, NY, 2000) 223-237.
  • 1997
  • “Growth processes in the heteroepitaxy of Ge and Si1-xGex on Si substrates using gas-source molecular beam epitaxy”, Yukio Yasuda, Hiroya Ikeda, Shigeaki Zaima, Advances in the Understanding of Crystal Growth Mechanisms, edited by T. Nishinaga, K. Nishioka, J. Harada, A. Sasaki, H. Takei (Elsevier Science B.V., 1997) 415-427.
  • 「ヘテロエピタキシャル成長の考え方:Ge/Si」, 安田幸夫,池田浩也, アドバンストエレクトロニクスシリーズI-18 結晶成長の基礎,西永頌編著,8.5節,培風館, (1997) 240-260.

プロシーディング

    2018
  • “Thermoelectric characteristics of nanocrystalline ZnO grown on fabrics for wearable power generator”,H. Ikeda, F. Khan, P. Veluswamy, S. Sakamoto, M. Navaneethan, M. Shimomura, K. Murakami, Y. Hayakawa, PowerMEMS 2017, IOP Conference Series: Journal of Physics, 1052 (2018) 012017-1-4.
  • “Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate”, R. Usop, N. K. A. Hamed, M. M. I. Megat Hasnan, H. Ikeda, M. F. M. Sabri, M. K. Ahmad, S. M. Said and F. Salleh, IOP Conference Series: Materials Science and Engineering, 342 (2018) 012051-1-6.
  • 2017
  • “ウェアラブル発電デバイスのためのナノ結晶フレキシブル材料の熱電特性”, 池田浩也,ファイザン・カーン,ベルスワミィ・パンディヤラサン,坂本翔太,マニ・ナヴァニーザン,下村勝,村上健司,早川泰弘, 信学技報, ED2016-140, SDM2016-157, (2017) 57-60.
  • 2016
  • “ZnOナノ構造を用いたフレキシブル材料の熱電特性評価”,和波雅也,セルバラジ・シャンティ,鈴木悠平,ベルスワミィ・パンディヤラサン,ファイズ・サレ,下村勝,村上健司,池田浩也,信学技報, ED2016-16, CPM2016-4, SDM2016-21 (2016) 15-18.
  • “ZnO nanostructures for the fabrication of photoanode towards energy applications”,M. Navaneethan, J. Archana, S. Harish, T. Koyama, H. Ikeda, Y. Hayakawa, 信学技報, ED2016-16, CPM2016-4, SDM2016-21 (2016) 9-14.
  • 「ナノワイヤーサーモパイル型赤外線センサのための均一SiGe混晶の成長と熱電特性」池田浩也,ムスサミ・オンプラカシュ,早川泰弘, 信学技報, ED2015-122, SDM2015-129 (2016) 19-22.
  • “Evaluation of wearable thermoelectric power generators by Sb-/Ag-doped ZnO nnocomposites and their properties”, V. Pandiyarasan, J. Archana, M. Navaneethan, F. Salleh, Y. Hayakawa and H. Ikeda, 信学技報, ED2015-122, SDM2015-129 (2016) 7-12.
  • 2015
  • 「高効率熱電変換デバイス用SiGe混晶のゼーベック係数」池田浩也,ベラッパン・マニムス,ムスサミ・オンプラカシュ,鈴木悠平,三輪一聡,ファイズ・サレ,ムカンナン・アリバナンドハン,鎌倉良成,早川泰弘,信学技報,ED2014-139, SDM2014-148 (2015) 7-11.
  • 2014
  • 「極薄SOI膜のゼーベック係数制御とナノ構造熱電特性測定技術の構築」池田浩也,鈴木悠平,三輪一聡,ファイズ・サレ,信学技報,ED2013-137, SDM2013-152 (2014) 31-35.
  • 2013
  • 「収束イオンビームを用いたPドープSOI基板に対するGaイオン注入とそのゼーベック係数」鈴木悠平,三輪一聡,ファイズ・サレ,下村勝,石田明広,池田浩也,信学技報,ED2013-22, CPM2013-7, SDM2013-29 (2013) 33-37.
  • “The dissolution process of Si into Ge melt and SiGe growth mechanism by x-ray penetration method”, M. Omprakash, M. Arivanandhan, R.A. Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa,信学技報,ED2013-22, CPM2013-7, SDM2013-29 (2013) 27-31.
  • 「外部電圧印加に伴うキャリア注入による極薄SOI膜のゼーベック係数変化」池田浩也,鈴木悠平,三輪一聡,ファイズ・サレ,信学技報,ED2012-129, SDM2012-158 (2013) 7-11.
  • 2012
  • 「外部電圧によりフェルミエネルギー制御した極薄Siのゼーベック係数」ファイズ・サレ,三輪一聡,池田浩也,信学技報,ED2011-153, SDM2011-170 (2012) 65-69.
  • “Construction of Seebeck-coefficient measurement by Kelvin-probe force microscopy”, H. Ikeda, K. Miwa and F. Salleh, AIP Conf. Porc. of 9th European Conference on Thermoelectrics (American Institute of Physics), 1449 (2012) 377-380.
  • 2011
  • 「Pドープ極薄Siにおけるゼーベック係数の理論的評価」ファイズ・サレ、池田浩也、信学技報、ED2010-194, SDM2010-229 (2011) 13-17.
  • 「単電子ポンプ動作を利用した半導体冷却デバイスの研究」池田浩也、ファイズ・サレ、信学技報、ED2010-193, SDM2010-228 (2011) 7-12.
  • “A novel refrigerator device using single-electron pump fabricated from semiconductor materials”, H. Ikeda and F. Salleh, Technical Report of IEICE, 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2011) 182-185.
  • 2010
  • 「シリコンを用いた単電子冷却デバイスの研究」池田浩也、ファイズ・サレ、信学技報、ED2010-20,CPM2010-10,SDM2010-20 (2010) 17-21.
  • 「高不純物濃度SOI基板のゼーベック係数」池田浩也、ファイズ・サレ、信学技報、ED2009-197, SDM2009-194 (2010) 5-9.
  • 2009
  • 「高効率熱電変換デバイス用シリコンナノ構造の熱電特性」池田浩也、ファイズ・サレ、浅井清涼、石田明広、信学技報、ED2008-238, SDM2008-230 (2009) 81-85.
  • 2008
  • “Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer”, D. Moraru, D. Nagata, K. Yokoi, H. Ikeda, M. Tabe, 信学技報、ED2007-244, SDM2007-255 (2008)
  • 「シリコンナノ構造による熱電変換デバイスの特性向上」池田浩也、山下尚見、信学技報、ED2007-244, SDM2007-255 (2008) 39-42.
  • 2007
  • 「多重ドットトランジスタによる単電子転送動作シミュレーション」池田浩也、田部道晴、信学技報、ED2007-30, CPM2007-29, SDM2007-30 (2007) 115-120.
  • 「不規則系多重トンネル接合による単電子転送の時間制御」モラル・ダニエル,小野行徳,猪川洋,横井清人,ラトノ・ヌルヤディ,池田浩也,田部道晴,信学技報、ED2006-255, SDM2006-243 (2007) 83-88.
  • 2006
  • 「Tunneling current oscillations in Si/SiO2/Si structures」D. Moraru,永田大輔,堀口誠二,ラトノ・ヌルヤディ,池田浩也,田部道晴,信学技報、ED2006-, CPM2006-, SDM2006- (2006).
  • 2004
  • 「Si/SiO2共鳴トンネル構造におけるSi井戸層のドット化現象」石川靖彦,長田浩平,池田浩也,田部道晴,信学技報、ED2004-, CPM2004-, SDM2004- (2004).
  • 2003
  • 「シリコン多重ドット構造における単電子伝導の光応答特性」池田浩也,ラトノ・ヌルヤディ,石川靖彦,田部道晴,信学技報、SDM2003-192 (2003) 81-85.
  • 「極薄SOI構造の熱凝聚現象とパターニング効果」石川靖彦,今井泰宏,ラトノ・ヌルヤディ,池田浩也,田部道晴,信学技報、ED2003-47, CPM2003-46, SDM2003-47 (2003) 79-83.
  • 2001
  • 「パルスレーザー蒸着法による高誘電率薄膜の作製と電気的特性」池田浩也、後藤覚、本多一隆、坂下満男、酒井朗、財満鎭明、安田幸夫、信学技報、SDM2001-57, 2001-06 (2001) 25-29.

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