国際学会発表
[1] T. Arikawa, K. Mochizuki, M. Sugiura, H. Nakagawa, S. Usami, M. Kushimoto, Y. Honda, H. Amano, S. Schütt, A. Vogt, M. Fiederle, H. Mimura, Y. Inoue, T. Aoki, T. Nakano, “Characterization of pin-GaN diodes radiation detection for -ray”, 2016 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD), Strasbourg, France, October 29 – November 6, 2016
[2] T. Arikawa, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano, “Efficiency of Al source supply to B composition in BAlGaN epitaxial growth”, PY2-18, The 14th International Conference on Global Research and Education, 28-30 September, Shizuoka University, Hamamatsu, Japan
国内学会発表
[1] 有川卓弥、杉浦睦仁、宇佐美茂佳、久志本真希、本田善央、天野浩、三村秀典、井上翼、青木徹、中野貴之,、” pin-GaN ダイオードを用いたα線検出特性評価”、 第63回応用物理学会春季学術講演会、22a-P6-5、東京工業大学、2016年3月19-22日
