総説
[1] Takayuki Nakano, “Study of group-III nitride semiconductor for novel neutron semiconducting detector”, JSAP Review 2023 (2023) 230201https://doi.org/10.11470/jsaprev.230201 [2] 三宅拓、中川央也、増澤智昭、山田貴壽、中野貴之、都木克之、青木徹、三村秀典、「ホウ素ドープ多結晶ダイヤモンドを用いた中性子検出」、NEW DIAMOND(ニューダイアモンド)、 Vol. 38, No. 4 (第147号), (2022) pp 28-30 [3] 中野貴之、「新奇中性子半導体検出器実現に向けたIII族窒化物半導体の研究」、応用物理、Vol. 91, No. 10 (2022) pp 599-605 [4] 中野貴之、青木徹、「III族窒化物半導体を用いた中性子検出器の開発」、放射線、Vol. 47, No. 2, (2022) pp 52-55 [5] 中野貴之、石上善浩、「紫外線イメージング技術」、画像ラボ、第25巻、第4号、(2014) pp14-19 [6] 中野貴之、「紫外線イメージング」、映像情報メディア学会誌、Vol. 67, No. 6, (2013) pp447-450 [7] 中野貴之、杉山正和、阿部英司、中野義昭、霜垣幸浩、「Zコントラスト法による化合物半導体へテロ界面急峻性評価、まてりあ、第45巻、第12号 (2006), 853
https://doi.org/10.2320/materia.45.853
投稿論文
[1] Kento Tabata, Yuga Kono, Ryosuke Goto, Yuya Abe, Takayuki Nakano, Hisashi Sugime, and Yoku Inoue, “Catalyst Dynamics in the Growth of High-Density CNT Forests; Fine Control of the Mass Density of Forest by Colloidal Catalyst Nanoparticles”, The Journal of Physical Chemistry C (J. Phys. Chem. C), 126 (2022) 48 pp 20448-20455 [2] Hiroki Ishihara, Keiya Shimada, Soshi Umeda, Naoki Yokoyama, Hiroto Honda, Kazuhiro Kurose, Yoshimasa Kawata, Atsushi Sugita, Yoku Inoue, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama, and Takayuki Nakano, “Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 61 (2022) SK1020 (7 pages) [3] Toshiya Kinoshita, Motoyuki Karita, Norikazu Chikyu, Takayuki Nakano, and Yoku Inoue, “Enhancement of catalytic activity by addition of chlorine in chemical vapor deposition growth of carbon nanotube forests”, Carbon, 196 (2022) pp 391-400 [4] Taku Miyake, Hisaya Nakagawa, Tomoaki Masuzawa, Takatoshi Yamada, Takayuki Nakano, Katsuyuki Takagi, Toru Aoki, and Hidenori Mimura, “Diamond radiation detector with built-in boron-doped neutron converter layer”, Physica Status Solidi A (Phys. Status Solidi A), 219 (2022) 2100315 (5 pages) [5] Takayuki Nakano, Ken Mochizuki, Takuya Arikawa, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Adrian Vogt, Sebastian Schütt, Michael Fiederle, Kazunobu Kojima, Shigefusa F. Chichibu, Yoku Inoue, and Toru Aoki, “Effective neutron detection using vertical-type BGaN diodes”, Journal of Applied Physics (J. Appl. Phys.), 130 (2021) 124501 (10 pages) [6] Kai Matsuhisa, Hiroki Ishihara, Mako Sugiura, Yoshimasa Kawata, Atsushi Sugita, Yoku Inoue, and Takayuki Nakano, “Fabrication and Optical characterization of GaN quasi-phase matching crystal by double polarity selective area growth in metal organic vapor phase epitaxy”, Functional Materials Letters (Funct. Mater. Lett.), 14 10 (2021) 2150034 (4 pages) [7] Tatsuhiro Hayashi, Motoyuki Karita, Takayuki Nakano, and Yoku Inoue, “A Study on the growth enhancement effects of chlorine on carbon nanotube forest in chloride-mediated chemical vapor deposition”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 60 (2021) 045001 (7 pages) [8] Yoku Inoue, Kohei Hayashi, Motoyuki Karita, Takayuki Nakano, Yoshinobu Shimamura, Keiichi Shirasu, Go Yamamoto, and Toshiyuki Hashida, “Study on the mechanical and electrical properties of twisted CNT yarns fabricated from CNTs with various diameters”, Carbon, 176 (2021), pp 400-410 [9] Norikazu Chikyu, Takayuki Nakano, Gunther Kletetschka, and Yoku Inoue, “Excellent electromagnetic interference shielding characteristics of a unidirectionally oriented thin multiwalled carbon nanotube/polyethylene film”, Materials & Design (Mater. Des.), 195 (2020) 108918 (9 pages) [10] Takayuki Nakano, Takahiro Kikuchi, Yuki Usuda, and Yoku Inoue, “Novel method for carbon nanotube growth using vapor-phase catalyst delivery”, Functional Materials Letters (Funct. Mater. Lett.), 13 5 (2020) 2050026 (4 pages) [11] 松久 快生、小林 佑斗、石原 弘基、杉浦 真子、杉田 篤史、井上 翼、中野 貴之、“両極性同時成長を用いたGaN-QPM 結晶の作製およびSHG に向けた光学特性評価”、信学技報(IEICE Technical Report), ED2019-42, CPM2019-61, LQE2019-85(2019-11), pp 41-44 [12] Yoji Ishikawa, Yasuhiro Fuchita, Takashi Hitomi, Yoku Inoue, Motoyuki Karita, Kohei Hayashi, Takayuki Nakano, and Naoko Baba, “Survivability of carbon nanotubes in space”, Acta Astronautica (Acta Astronaut.), 165 (2019) pp 129–138 [13] Kazushi Ebara, Ken Mochizuki, Yoku Inoue, Toru Aoki, Kazunobu Kojima, Shigefusa F. Chichibu, and Takayuki Nakano, “Impact of growth temperature on the structural properties of BGaN films grown by metal-organic vapor phase epitaxy using trimethylboron”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 58 (2019) SC1042 (5 pages) [14] Toshiya Kinoshita, Motoyuki Karita, Takayuki Nakano, and Yoku Inoue, “Two-step floating catalyst chemical vapor deposition including in situ fabrication of catalyst nanoparticles and carbon nanotube forest growth with low impurity level”, Carbon, 144 (2019) 152-160 [15] Hirotaka Yagi, Noriyuki Osumi, Yoku Inoue, and Takayuki Nakano, “Double-Polarity Selective-Area Growth of GaN by Metal-Organic Vapor-Phase Epitaxy Using Narrow-Pitch Patterns”, Physica Status Solidi B (Phys. Status Solidi B), 255 5 (2018) 1700475 (7 page) [16] Hiroki Nagai, Tatsuya Suzuki, Takayuki Nakano, and Mitsunobu Sato, “Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder”, Materials Letters (Mater. Lett.), 182 (2016) pp 206–209 [17] Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, and Takayuki Nakano, “Effect of substrate offcut angle on BGaN epitaxial growth”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 55 (2016) 05FD05 [18] Kenta Kuze, Noriyuki Osumi, Yohei Fujita, Yoku Inoue, and Takayuki Nakano, “Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 55 (2016) 05FA05 [19] Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano, “Study of radiation detection properties of GaN pn diode”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 55 (2016) 05FJ02 [20] Yoku Inoue, Kazumichi Nakamura, Yuta Miyasaka, Takayuki Nakano, and Gunther Kletetschka, “Cross-linking multiwall carbon nanotubes using PFPA to build robust, flexible and highly aligned large-scale sheets and yarns”, Nanotechnology, 27 (2016) 115701(10pp) [21] Yoshinobu Shimamura, Kahori Oshima, Keiichiro Tohgo, Tomoyuki Fujii, Keiichi Shirasu, Go Yamamoto, Toshiyuki Hashida, Ken Goto, Toshio Ogasawara, Kimiyoshi Naito, Takayuki Nakano, and Yoku Inoue, “Tensile mechanical properties of carbon nanotube/epoxy composite fabricated by pultrusion of carbon nanotube spun yarn perform”, Composites Part A, 62 (2014) pp 32-38 [22] Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano, “Neutron detection using boron gallium nitride semiconductor material”, APL Materials (APL Mater.), 2 (2014) 032106 [23] 藤田陽平、高野泰、井上翼、中野貴之、“カーボンマスクを用いたGaN両極性同時成長プロセス”、信学技報(IEICE Technical Report), Vol. 113 No. 39 (2013) pp 13-18 [24] 渥美勝浩、三宅亜紀、三村秀典、井上翼、青木徹、中野貴之、“中性子半導体検出器の実現に向けたBGaN薄膜の作製と評価”、信学技報(IEICE Technical Report), Vol. 113 No. 39 (2013) pp 19-22 [25] Toru Aoki, Aki Miyake, Takayuki Nakano, Akifumi Koike, Hisashi Morii, and Hidenori Mimura, “Semiconductor Thermal Neutron Detector”, Makara Journal of Technology (Makara Seri Teknologi), 17(3) (2013) pp 133-137 [26] Yohei Fujita, Yasushi Takano, Yoku Inoue, Masatomo Sumiya, Shunro Fuke, and Takayuki Nakano, “Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 52 (2013) 08JB26 [27] Crina Ghemes, Adrian Ghemes, Morihiro Okada, Hidenori Mimura, Takayuki Nakano, and Yoku Inoue, “Study of Growth Enhancement of Multiwalled Carbon Nanotubes by Chlorine-Assisted Chemical Vapor Deposition”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 52 (2013) 035202 [28] Yasuyuki Fukushima, Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, “Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 51 (2012) 055601 [29] Takayuki Nakano, Tomonari Shioda, Naomi Enomoto, Eiji Abe, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, “Precise structure control of GaAs/InGaP hetero-interface using metal organic vapor phase epitaxy and its abruptness analyzed by STEM”, Journal of Crystal Growth (J. Cryst. Growth), 347 (2012) pp 25-30 [30] Takayuki Nakano, Masateru Hamada, and Shunro Fuke, “Fabrication and performance of photocatalytic GaN powders”, Advanced Materials Research (Adv Mat Res), 222 (2011) pp 142-145 [31] Akihiro Ishida, Tomohiro Yamada, Takayuki Nakano, Yasushi Takano, and Sadao Takaoka, “Seebeck Effects and Electronic Thermal Conductivity of IV–VI Materials”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 50 (2011) 031302 [32] Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, “Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 50 (2011) 011201 [33] Masatomo Sumiya, Yutaro Kamo, Naoki. Ohashi, Masaki Takeguchi, Yoon-Uk Heo, Hideki Yoshikawa, Shigenori Ueda, Keisuke Kobayashi, Tokuaki Nihashi, Minoru Hagino, Takayuki Nakano, and Shunro Fuke, “Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates”, Applied Surface Science (Appl. Surf. Sci.), 256 (2010) pp 4442–4446 [34] Hisashi Matsumura, Yasuo Kanematsu, Takayoshi Shimura, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Masatomo Sumiya, Takayuki Nakano, and Shunro Fuke, “Lateral polarity control in GaN based on selective growth procedure using carbon mask layers”, Applied Physics Express (Appl. Phys. Express), 2 (2009) 101001 [35] R. Ohba, J. Ohta, K. Shimomoto, T. Fujii, K. Okamoto, A. Aoyama, T. Nakano, A. Kobayashi, H. Fujioka, and M. Oshima, “Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition”, Journal of Solid State Chemistry (J Solid State Chem), 182 (2009) pp 2887–2889 [36] Takayuki Nakano, Kazuki Nishimoto, Masatomo Sumiya, and Shunro Fuke, “Growth and properties of ZnO films grown using PA-MOVPE with DMZn and N2O”, Journal of Automation, Mobile Robotics & Intelligent Systems (J. Autom. Mob. Robot. Intell. Syst.), Vol. 3, No. 4 (2009) pp 124-126 [37] Takayuki Nakano, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki, “Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 48 (2009) 011101 [38] Koichiro Okamoto, Shigeru Inoue, Takayuki Nakano, Jitsuo Ohta, and Hiroshi Fujioka, “Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers”, Journal of Crystal Growth (J. Cryst. Growth), 311 (2009) pp 1311–1315 [39] T. Nakano, T. Shioda, E. Abe, M. Sugiyama, N. Enomoto, Y. Nakano, and Y. Shimogaki, “Abrupt InGaP/GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy”, Applied Physics Letters (Appl. Phys. Lett.), 92 (2008) 112106-8 [40] T. Nakano, M. Sugiyama, Y. Nakano, and Y. Shimogaki, “Kinetics of Subsurface Formation during Metal-Organic Vapor Phase Epitaxy Growth of InP and InGaP”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 47 (2008) pp 1473-1478 [41] K. Okamoto, S. Inoue, T. Nakano, T.-W. Kim, M. Oshima, and H. Fujioka, “Epitaxial growth of AlN on single crystal Mo substrates”, Thin Solid Films, 516 (2008) pp 4809–4812 [42] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jitsuo Ohta, and Hiroshi Fujioka, “Growth of single crystalline GaN on silver mirrors”, Applied Physics Letters (Appl. Phys. Lett.), 91 (2007) 191905-7 [43] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka, “Epitaxial growth of AlN films on Rh ultraviolet mirrors”, Applied Physics Letters (Appl. Phys. Lett.), 91 (2007) 131910-2 [44] Momoko Deura, Masakazu Sugiyama, Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, “Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy”, Japanese Journal of Applied Physics (Jpn. J. Appl. Phys.), 46(10A) (2007) pp 6519–6524 [45] O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties”, Journal of Crystal Growth (J. Cryst. Growth), 298 (2007) pp 85-89 [46] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka, “Characteristics of single crystalline AlN films grown on Ru(0001) substrates”, Journal of Crystal Growth (J. Cryst. Growth), 297 (2006) pp 317-3211
[47] Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, “Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE”, Journal of Crystal Growth (J. Cryst. Growth), 296 (2006) pp 179-185 [48] M. Sugiyma, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki, “Control of abnormal edge growth in selective area MOVPE of InP”, Journal of Crystal Growth (J. Cryst. Growth), 287 (2006) pp 668-672 [49] N. Waki, T. Nakano, M. Sugiyma, Y. Nakano, and Y. Shimogaki, “Role of surface diffusion during Selective Area MOVPE growth of InP”, Thin Solid Films, 498 (2006) pp 163-166 [50] Takayuki Nakano，Masakazu Sugiyama，Yoshiaki Nakano, and Yukihiro Shimogaki, “The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method”, Journal of Crystal Growth (J. Cryst. Growth), 272 (2004) pp 15-23 [51] Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, “Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE”, Journal of Crystal Growth (J. Cryst. Growth), 221 (2000) pp 136-141