発表論文


[1] Toshiya Kinoshita, Motoyuki Karita, Takayuki Nakano, Yoku Inoue, ” Two stepfloating catalyst chemical vapor deposition includingin situfabrication of catalyst nanoparticles and carbon nanotube forestgrowth with low impurity level”, Carbon 144 (2019) 152-160

[2] Hirotaka Yagi, Noriyuki Osumi, Yoku Inoue, and Takayuki Nakano, “Double-Polarity Selective-Area Growth of GaN by Metal-Organic Vapor-Phase Epitaxy Using Narrow-Pitch Patterns”, Phys. Status Solidi B 255 5 (2018) 1700475 (7page)

[3] Hiroki Nagai, Tatsuya Suzuki, Takayuki Nakano, Mitsunobu Sato, “Embedding of copper into submicrometer trenches in a silicon substrate using the molecular precursor solutions with copper nano-powder”, Materials Letters 182(2016)206–209

[4] Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, and Takayuki Nakano, “Effect of substrate offcut angle on BGaN epitaxial growth”, Jpn. J. Appl. Phys. 55 (2016) 05FD05

[5] Kenta Kuze, Noriyuki Osumi, Yohei Fujita, Yoku Inoue, and Takayuki Nakano, “Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy”, Jpn. J. Appl. Phys. 55 (2016) 05FA05

[6] Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki and Takayuki Nakano, “Study of radiation detection properties of GaN pn diode”, Jpn. J. Appl. Phys. 55 (2016) 05FJ02

[7] Yoku Inoue, Kazumichi Nakamura, Yuta Miyasaka, Takayuki Nakano and Gunther Kletetschka, “Cross-linking multiwall carbon nanotubes using PFPA to build robust, flexible and highly aligned large-scale sheets and yarns”, Nanotechnology 27 (2016) 115701(10pp)

[8] Yoshinobu Shimamura, Kahori Oshima, Keiichiro Tohgo, Tomoyuki Fujii, Keiichi Shirasu, Go Yamamoto, Toshiyuki Hashida, Ken Goto, Toshio Ogasawara, Kimiyoshi Naito, Takayuki Nakano, Yoku Inoue; “Tensile mechanical properties of carbon nanotube/epoxy composite fabricated by pultrusion of carbon nanotube spun yarn preform”, Composites: Part A, 62 (2014) 32-38

[9] Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano; “Neutron detection using boron gallium nitride semiconductor material”, APL Mater. 2, 032106 (2014)

[10] Toru Aoki, Aki Miyake, Takayuki Nakano, Akifumi Koike, Hisashi Morii, and Hidenori Mimura, “Semiconductor Thermal Neutron Detector”, Makara Seri Teknologi, 17(3) (2013) 133-137

[11] Yohei Fujita, Yasushi Takano, Yoku Inoue, Masatomo Sumiya, Shunro Fuke and Takayuki Nakano; “Double polar selective area growth of GaN MOVPE by using carbon mask layers”, Jpn. J. Appl. Phys., 52 (2013) 08JB26

[12] Crina Ghemes, Adrian Ghemes, Morihiro Okada, Hidenori Mimura, Takayuki Nakano, and Yoku Inoue; “Study of Growth Enhancement of Multiwalled Carbon Nanotubes by Chlorine-Assisted Chemical Vapor Deposition”, Jpn. J. Appl. Phys. 52 (2013) 035202

[13] Yasuyuki Fukushima, Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki; “Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics 51 (2012) 055601

[14] Takayuki Nakano, Tomonari Shioda, Naomi Enomoto, Eiji Abe, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki; “Precise structure control of GaAs/InGaP hetero-interface using metal organic vapor phase epitaxy and its abruptness analyzed by STEM”, Journal of Crystal Growth, 347 (2012) 25-30

[15] Takayuki Nakano, Masateru Hamada and Shunro Fuke; “Fabrication and performance of photocatalytic GaN powders”, Advanced Materials Research, 222 (2011) pp 142-145

[16] Akihiro Ishida, Tomohiro Yamada, Takayuki Nakano, Yasushi Takano, and Sadao Takaoka; “Seebeck Effects and Electronic Thermal Conductivity of IV–VI Materials”, Japanese Journal of Applied Physics, 50 (2011) 031302

[17] Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki; “Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement”, Japanese Journal of Applied Physics, 50 (2011) 011201

[18] Masatomo Sumiya, Yutaro Kamo, Naoki. Ohashi, Masaki Takeguchi, Yoon-Uk Heo, Hideki Yoshikawa, Shigenori Ueda, Keisuke Kobayashi, Tokuaki Nihashi, Minoru Hagino, Takayuki Nakano, Shunro Fuke; “Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates”, Applied Surface Science ,256 (2010) 4442–4446

[19] Hisashi Matsumura, Yasuo Kanematsu, Takayoshi Shimura, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Masatomo Sumiya, Takayuki Nakano, and Shunro Fuke; “Lateral polarity control in GaN based on selective growth procedure using carbon mask layers”, Applied Physics Express, 2 (2009) 101001

[20] R. Ohba, J. Ohta, K. Shimomoto, T. Fujii, K. Okamoto, A. Aoyama, T. Nakano, A. Kobayashi, H. Fujioka, M. Oshima; “Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition”, Journal of Solid State Chemistry, 182 (2009) 2887–2889

[21] Takayuki Nakano, Kazuki Nishimoto, Masatomo Sumiya, Shunro Fuke; Growth and properties of ZnO films grown using PA-MOVPE with DMZn and N2O”, Journal of Automation, Mobile Robotics & Intelligent Systems, Vol. 3, No. 4 (2009) pp. 124-126

[22] Takayuki Nakano, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki; “Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, Vol. 48 (2009) 011101

[23] Koichiro Okamoto, Shigeru Inoue, Takayuki Nakano, Jitsuo Ohta, Hiroshi Fujioka; “Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers”, Journal of Crystal Growth, 311 (2009) pp1311–1315

[24] T. Nakano, T. Shioda, E. Abe, M. Sugiyama, N. Enomoto, Y. Nakano and Y. Shimogaki; “Abrupt InGaP/GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy”, Applied Physics Letters, 92 (2008) 112106-8

[25] T. Nakano, M. Sugiyama, Y. Nakano and Y. Shimogaki; “Kinetics of Subsurface Formation during Metal-Organic Vapor Phase Epitaxy Growth of InP and InGaP”, Japanese Journal of Applied Physics, 47 (2008) 1473-1478

[26] K. Okamoto, S. Inoue, T. Nakano, T.-W. Kim, M. Oshima and H. Fujioka; “Epitaxial growth of AlN on single crystal Mo substrates”, Thin Solid Films, 516 (2008) 4809–4812

[27] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jitsuo Ohta, and Hiroshi Fujioka; “Growth of single crystalline GaN on silver mirrors”, Applied Physics Letters, 91 (2007) 191905-7

[28] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka; “Epitaxial growth of AlN films on Rh ultraviolet mirrors”, Applied Physics Letters, 91 (2007) 131910-2

[29] Momoko Deura, Masakazu Sugiyama, Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki; “Kinetic Analysis on the Surface Adsorption Layer in GaAs (001) Metalorganic Vapor Phase Epitaxy by in situ Reflectance Anisotropy Spectroscopy”, Japanese Journal of Applied Physics, 46(10A) (2007) 6519–6524

[30] O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano; “High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties”, Journal of Crystal Growth, 298 (2007) 85-89

[31] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka; “Characteristics of single crystalline AlN films grown on Ru(0001) substrates”, Journal of Crystal Growth, 297 (2006) 317-321

[32] Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki; “Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE”, Journal of Crystal Growth, 296 (2006) 179-185

[33] M. Sugiyma, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki; “Control of abnormal edge growth in selective area MOVPE of InP”, Journal of Crystal Growth, 287 (2006) 668-672

[34] N. Waki, T. Nakano, M. Sugiyma, Y. Nakano, and Y. Shimogaki; “Role of surface diffusion during Selective Area MOVPE growth of InP”, Thin Solid Films, 498 (2006) 163-166

[35] Takayuki Nakano,Masakazu Sugiyama,Yoshiaki Nakano,and Yukihiro Shimogaki; “The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method”, Journal of Crystal Growth, 272 (2004) 15-23

[36] Takayuki Nakano,Yoshiaki Nakano,and Yukihiro Shimogaki; “Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE”, Journal of Crystal Growth, 221 (2000) 136-141