発表論文
[1] Katsuhiro Atsumi, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano; “Neutron detection using boron gallium nitride semiconductor material”, APL Mater. 2, 032106 (2014)
国際会議発表
[1] Katsuhiro Atsumi, Hidenori Mimura, Yoku Inoue, Toru Aoki, Takayuki Nakano; “The Characteristic of Radiation Detection Property for GaN and BGaN”, 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD), R11-3, COEX Convention Center, Seoul, Korea, October 27 – November 2, 2013
[2] Katsuhiro Atsumi, Kosugi Naohumi, Aki Miyake, Hidenori Mimura, Yoku Inoue, Toru Aoki, Takayuki Nakano; “New neutron detector by using semiconductor BGaN”, 2013 SPIE Optics + Photonics, 8852-51, San Diego Convention Center, San Diego, California, USA, 25-29 August, 2013
[3] Katsuhiro Atsumi, Hisashi Kaneko, Takahiro Nishioka, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano, “Investigation of radiation detection which used BGaN”, International Workshop on Nitride Semiconductors 2012 (IWN2012), MoP-GR-28 , Sapporo Convention Center, Sapporo, Japan, October 14-19, 2012
国内学会発表
[1] K. Atsumi, A. Miyake, Y. Inoue, H. Mimura, T. Aoki and T. Nakano, “The evaluation of radiation detection for GaN and BGaN”, 32th Electronic Materials Symposium (EMS32), We2-11, Laforret Biwako, Shiga, July 10-12, 2013
[2] 渥美勝浩、三宅亜紀、三村秀典、井上翼、青木徹、中野貴之、”中性子半導体検出器の実現に向けたBGaN薄膜の作製と評価”、 2013年度電子情報通信学会ED/CPM/SDM合同5月研究会、静岡大学浜松キャンパス、2013年5月16-17日
[3] 渥美勝浩，小杉尚文，三宅亜紀，井上翼，三村秀典，青木徹，中野貴之、“中性子検出半導体に向けたBGaN結晶の作製と検出特性の評価”、第60回応用物理学会春季学術講演会、29a-PA1-2、神奈川工科大学、2013年3月27-30日
[4] 渥美勝浩，金子寿，西岡孝浩，井上翼，三村秀典，青木徹，中野貴之、“中性子検出半導体に向けたBGaN の結晶成長と評価”、第73回応用物理学会学術講演会、12p-H10-7、愛媛大学、2012年9月11-14日
[5] K. Atsumi, H. Kaneko, T. Nishioka, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano, “The research on the possibility of the novel neutron detector using BGaN”, 31th Electronic Materials Symposium (EMS31), We2-23, Laforret Suzenji, Izu, July 11-13, 2012
その他
[1] 渥美勝浩、三宅亜紀、三村秀典、井上翼、青木徹、中野貴之、”中性子半導体検出器の実現に向けたBGaN薄膜の作製と評価”、信学技報(IEICE Technical Report), Vol. 113 No. 39 (2013) pp19-22
