国際学会
[1] Takahiro Kikuchi, Hidenori Mimura, Yoku Inoue, Kentaro Ishikawa, Tauto Nakanishi, Takeshi Shimogushi, Takayuki Nakano, “The suggestion of Hydride Vapor Phase Nucleation as novel CNT growth method”, 4th international Symposium for Promotion of Interdisciplinary Domain Research, Po-24, 1-2 December 2014, GRANSHIP, Shizuoka, Japan [2] Kohei Hayashi, Tauto Nakanishi, Kentarao Ishikawa, Takeshi Shimoguchi, Yoshinobu Shimamura, Hidenori Mimura, Takayuki Nakano, Yoku Inoue “Control of electrical and Mechanical property of MWCNT yarn”, 4th international Symposium for Promotion of Interdisciplinary Domain Research, P-23, 1-2 December 2014, GRANSHIP, Shizuoka, Japan [3] M. Sugiura, K. Atsumi, Y. Inoue, H. Mimura, T. Aoki, T. Nakano, “Evaluation of Radiation Detection Characteristic for GaN Semiconductor Material”, IEEE Nuclear Science symposium &Medical Imaging Conference; 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, R05-3, 8-15 November 2014, Washington State Convention Center, Seattle, WA USA[4] Takayuki Nakano, Yoku Inoue, Hidenori Mimura, Toru Aoki, “Fabrication and Development of BGaN Device for the Novel Neutron Semiconductor Detector”, IEEE Nuclear Science symposium &Medical Imaging Conference; 21st Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, J01-5, 8-15 November 2014, Washington State Convention Center, Seattle, WA USA, (Invited talk)
[5] Takayuki Nakano, Yoku Inoue, Hidenori Mimura, Toru Aoki, “Fabrication of BGaN semiconductor device for neutron detection”, The 21st International of The Society of Pure and Applied Coordination Chemistry (SPACC) Symposium, October 31 – November 3, 2014, Shinjuku, Tokyo, Japan, (Invited talk)
[6] K. Kuze, Y. Fujita, H. Mimura, Y. Inoue and T. Nakano; “The investigation of optical characteristic of GaN double polarity selective area growth by using MOVPE”, The 8th International Workshop on Nitride Semiconductors (IWN2014), TuGP25, August 24-29, 2014, Wroclaw, Poland [7] K. Ueyama, K. Atsumi, H. Mimura, Y. Inoue, T. Aoki and T. Nakano, “Improved BGaN epitaxial growth for the neutron detection device”, The 8th International Workshop on Nitride Semiconductors (IWN2014), WeGP11, August 24-29, 2014, Wroclaw, Poland [8] Hiroki Nagai, Takayuki Nakano, Shohei Mita, Tomohiro Yamaguchi, Ichiro Takano, Tohru Honda, Mitsunobu Sato; “Fabrication of copper thin films using the solution based method”, The Third International Conference on Materials, Science and Environments (ICMEE’14), OR-87 (invited), July 01-03, 2014, Honolulu, Hawaii, USA, (Invited talk) [9] Takayuki Nakano, Hidenori Mimura, Yoku Inoue, Toru Aoki; “Investigation of novel neutron detector by using BGaN semiconductor material”, The Third International Conference on Materials, Science and Environments (ICMEE’14), IN-4 (invited), July 01-03, 2014, Honolulu, Hawaii, USA, (Invited talk) [10] K. Kuze, Y. Fujita, H. Mimura, Y. Inoue, and T. Nakano; “The Evaluation of Optical Characteristic of GaN Double Polarity Selective Area Growth by Using MOVPE”, the Second Conference on LED and Its Industrial Application (LEDIA ’14), LEDp6-11, Pacifico Yokohama, Yokohama, Japan, April 22 – 24, 2014 [11] K.Ueyama, K. Atsumi, H. Mimura, Y. Inoue, T. Aoki, and T. Nakano; “Examination of on the Influence of Boron Flow Rate and Substrate in BGaN Epitaxial Growth”, the Second Conference on LED and Its Industrial Application (LEDIA ’14), LEDp6-1, Pacifico Yokohama, Yokohama, Japan, April 22 – 24, 2014 [12] Takayuki Nakano, “Novel neutron detection system by using group-III nitride semiconductor”, 2014 International Workshop on Advanced Nanovision Science, January 20-21 2014, Shizuoka University, Japan, (Invited talk)