国際学会
[1] Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano, “Evaluation of radiation detection characteristics for GaN diode”, Tu-B53, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), November 8-13, 2015, Act City Hamamatsu, Hamamatsu, Japan
[2] Kenta Kuze, Noriyuki Osumi, Yoku Inoue, and Takayuki Nakano, “The evaluation of growth phenomenon about each polarity in GaN double polarity selective area growth”, Tu-A2, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), November 8-13, 2015, Act City Hamamatsu, Hamamatsu, Japan
[3] Kohei Ueyama, Hidenori Mimura, Yoku Inoue, Toru Aoki, and Takayuki Nakano, “Characterization of fabricated BGaN films at each growth conditions”, We-A42, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), November 8-13, 2015, Act City Hamamatsu, Hamamatsu, Japan
[4] Noriyuki Osumi, Kenta Kuze, Yoku Inoue and Takayuki Nakano, “Introduction of Ga-polar initial layer for GaN double polarity selective area growth using MOVPE”, Tu-A1, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), November 8-13, 2015, Act City Hamamatsu, Hamamatsu, Japan
[5] T. Kinoshita, T. Nakano, Y. Inoue, “Growth of spinnable ultra-long vertically aligned MWCNT array for large-scale CNT applications”, PY1-25, The 14th International Conference on Global Research and Education, 28-30 September, Shizuoka University, Hamamatsu, Japan
[6] T. Nakamura, K. Ueyama, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano, “Development of high B composition BGaN by Mg surfactant”, PY2-17, The 14th International Conference on Global Research and Education, 28-30 September, Shizuoka University, Hamamatsu, Japan
[7] T. Arikawa, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano, “Efficiency of Al source supply to B composition in BAlGaN epitaxial growth”, PY2-18, The 14th International Conference on Global Research and Education, 28-30 September, Shizuoka University, Hamamatsu, Japan
[8] Y. Inoue, K. Sako, T. Inoue, V. Premalal, T. Nakano, K. Suzuki, Y. Okumiya, K. Yataka, S. Sakakibara, H. Mimura, “A fast-response aligned-carbon nanotube/polymer large-strain sensor”, O9B.3, International Conference on Diamond and Carbon Materials, 6-10 September 2015, Bad Homburg, Germany
[9] Toshiya Kinoshita, Vikum Premalal, Takayuki Nakano, Tauto Nakanishi, Kentaro Ishikawa, Yoku Inoue, “Development of growth technique of spinnable ultra-long dense MWCNT using a mist CVD method”, P1.39, International Conference on Diamond and Carbon Materials, 6-10 September 2015, Bad Homburg, Germany
[10] N. Chikyu, V. Premalal, T. Nakano, H. Mimura, Y. Inoue, “Electromagnetic interference shielding properties of dry-spun carbon nanotube web/polymer composites”, P2.41, International Conference on Diamond and Carbon Materials, 6-10 September 2015, Bad Homburg, Germany
[11] Toshiya Kinoshita, Vikum Premalal, Takayuki Nakano, Tauto Nakanishi, Kentaro Ishikawa, Yoku Inoue. “Mist CVD method for millimeter-long dense MWCNT array”, The Sixteenth International Conference on the Science and Application of Nanotuobes (NT15), P283, 29 June – 3 July 2015, Nagoya University, Nagoya, Japan
[12] Yoshiki Shibata, Vikum Premalal, Takayuki Nakano, Yoshinobu Shimamura, Ken Goto, Toshio Ogasawara “Mechanical and electrical characteristics of highly aligned CNT/polymer composite materials”, The Sixteenth International Conference on the Science and Application of Nanotuobes (NT15), P463, 29 June – 3 July 2015, Nagoya University, Nagoya, Japan
[13] Yoku Inoue, Keisuke Sako, Takayuki Inoue, Vikum Premalal, Takayuki Nakano, Katsunori Suzuki, Yasuhiro Okumiya, Koji Yataka, Shingo Sakakibara, “Unidirectionally aligned-carbon nanotube/polymer composite strain sensor”, The Sixteenth International Conference on the Science and Application of Nanotuobes (NT15), P488, 29 June – 3 July 2015, Nagoya University, Nagoya, Japan
[14] Hiroki NAGAI, Takayuki NAKANO, Ichiro TAKANO, Tohru HONDA, Mitsunobu SATO; “Embedding of Copper into Trench of Si Substrate by Molecular Precursor Method”, The International Conference on Materials for Advanced Technologies 2015 (ICMAT2015),R11-1, 28 June – 3 July 2015, SUNTEC Singapore
[15] Takayuki Nakano, Kenta Kuze, Yoku Inoue, “The development of double polarity GaN growth for fabrication of the GaN QPM crystal”, SPIE Microtechnologies 2015, 9519-29, 4 – 6 May 2015, Hotel Alimara, Barcelona, Spain
[16] M. Sugiura, M. Kushimoto, T. Mitsunari, K Yamashita, Y. Honda, H. Amano, Y. Inoue, H. Mimura, T. Aoki, and T. Nakano, “Characterization of Radiation Detection for GaN”, The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA’15), LEDp2-46, 22 – 24 April 2015, Pacifico Yokohama, Kanagawa, Japan
[17] N. Osumi, K. Kuze, Y. Inoue, and T. Nakano, “Examination of the Initial Layer for GaN Double Polarity Selective Area Growth by Using MOVPE”, The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA’15), LEDp2-2, 22 – 24 April 2015, Pacifico Yokohama, Kanagawa, Japan
国内学会
[1] 中野貴之、上山浩平、中村匠、井上翼、青木徹、小島一信、秩父重英、“BGaN半導体材料における結晶成長技術の開発と諸特性の評価”、第15回多元物質科学研究所研究発表会、P2-06、2015年12月22日
[2] 上山 浩平、中村 匠、三村 秀典、井上 翼、青木 徹、中野 貴之、“MOVPE法にて作製したBGaN結晶の諸特性の評価”、 第76回応用物理学会秋季学術講演会、14p-PB12-12、名古屋国際会議場、2015年9月13-16日
[3] 大隅 紀之、久瀬 健太、井上 翼、中野 貴之、” GaN-MOVPE両極性同時成長法における界面垂直性制御“、第76回応用物理学会秋季学術講演会、13p-1D-22、名古屋国際会議場、2015年9月13-16日
[4] 杉浦 睦仁、久志本 真希、光成 正、山下 康平、本田 善央、天野 浩、三村 秀典、井上 翼、青木 徹、中野 貴之、“GaNにおける放射線検出特性の実験的評価(2)”、 第76回応用物理学会秋季学術講演会、13p-PA7-46、名古屋国際会議場、2015年9月13-16日
[5] 木下 聖也、中野 貴之、井上 翼、中西 太宇人、石川 健太郎、” ミストCVD法を用いた長尺紡績性MWCNTアレイ成長”、 第76回応用物理学会秋季学術講演会、14a-2U-6、名古屋国際会議場、2015年9月13-16日
[6] K. Ueyama, H. Mimura, Y. Inoue, T. Aoki and T. Nakano, “Dependencies of growth temperature and carrier gases in BGaN growth”, 34th Electronic Materials Symposium (EMS34), We1-1, Laforret Biwako, Shiga, July 15-17, 2015
[7] K. Kuze, N. Osumi, Y. Inoue and T. Nakano, “The examination of dependence on V/III ratio in GaN double polarity selective area growth”, 34th Electronic Materials Symposium (EMS34), We1-10, Laforret Biwako, Shiga, July 15-17, 2015
[8] M. Sugiura, M. Kushimoto, T. Mitsunari, K. Yamashita, Y. Honda, H. Amano, Y. Inoue, H. Mimura, T. Aoki and T. Nakano, “Characterization of radiation detection for GaN semiconductor material”, 34th Electronic Materials Symposium (EMS34), Fr1-18, Laforret Biwako, Shiga, July 15-17, 2015
[9] N. Osumi, K. Kuze, Y. Inoue and T. Nakano, “Examination of the initial layer for GaN double polarity selective area growth by using MOVPE”, 34th Electronic Materials Symposium (EMS34), We1-9, Laforret Biwako, Shiga, July 15-17, 2015
[10] 杉浦睦仁，久志本真希，光成正，山下康平，本田善央，天野 浩，三村秀典，井上翼，青木徹，中野貴之、” GaN 半導体材料における放射線検出特性評価“、第7回 窒化物半導体結晶成長講演会（プレISGN-6）、Fr-13、東北大学片平キャンパス片平さくらホール、2015年5月7-8日
[11] 久瀬健太，大隅紀之，井上 翼，中野貴之、” MOVPE 法を用いたGaN 両極性同時成長におけるV/III 比依存性の検討“、第7回 窒化物半導体結晶成長講演会（プレISGN-6）、Fr-03、東北大学片平キャンパス片平さくらホール、2015年5月7-8日
[12] 杉浦睦仁、久志本真希、光成 正、山下康平、本田善央、天野浩、三村秀典、井上翼、青木徹、中野貴之、” GaNダイオードの放射線検出特性評価“、第62回応用物理学会春季学術講演会、12a-B1-3、東海大学湘南キャンパス、2015年3月11-14日
[13] 久瀬健太、井上翼、中野貴之、“GaN両極性同時成長におけるV/III比依存性の検討”、第62回応用物理学会春季学術講演会、12p-P16-3、東海大学湘南キャンパス、2015年3月11-14日
