Wafer Processing Device
◆Name：Electron Beam Lithography System
◆Model number：ELS-7700K
◆Manufacturer：ELIONIX (Introduction page of similar product)
◆Use：Drawing ultrafine pattern by electron beam.
It is mainly used for creating photomasks.
◆Spec：
(1)Electronic engineering body
Electron gun…Thermal field emission type electron gun (ZrO / W)
Minimum electron beam through…20 nm φ
Minimum drawing line width…≦ 7 nm
Maximum acceleration voltage…80 kV
(2)Sample chamber
Movement range…X, Y direction=155 mm、Z direction=5 mm
Maximum sample size…φ150 mm or 150 mm square
Minimum sample size…≦ 5 mm square
Drawing positioning resolution…0.31 nm
Field coupling accuracy…40 nm
Overlay drawing accuracy…40 nm
◆Operation guide：Click here (old ver.)
◆Name：Mask Aligner
◆Model number：MJB4
◆Manufacturer：SUSS MicroTec (Introduction page of product)
◆Use：Exposing ultraviolet light to the contact sample and photomask.
A pattern can be transferred to an arbitrary position on the sample.
◆Spec：
Resolution pattern…0.8 μm L/S
Maximum exposure area…100 mm φ
Illuminance distribution…≦ 5 % (100 mm φ)
Substrate size…5×5~25×25 mm square
Substrate thickness…Up to 4 mm
Mask size…2.5 inch square / 3 inch square
Alignment Stage…
XY axis movable range…±5 mm
θ axis movable range…±5°
XY axis mechanical resolution…0.1 μm
θ axis mechanical resolution…4×10^-5°
Shift amount of XY axis when Z axis rises…≦ 0.1 μm
◆Operation guide：Click here (old ver.)
◆Name：Spincoater
◆Model number：ACT-220DⅡ
◆Manufacturer：Active(Introduction page of product)
◆Use：Apply resist uniformly to sample using centrifugal force of high speed rotation.
◆Spec：
Substrate size…φ10 ~ φ100 (Max.φ4 inch, □70 mm)
Rotation range / Rotation speed accuracy…300 ~ 8000 rpm / ≦ ±3 rpm
◆Operation guide：
◆Name：Spincoater
◆Model number：ACT-300AⅡ
◆Manufacturer：Active(Introduction page of product)
◆Use：Apply resist uniformly to sample using centrifugal force of high speed rotation.
◆Spec：
Substrate size…φ10 ~ φ150 (Max.φ6 inch, □110 mm)
Rotation range / Rotation speed accuracy…10 ~ 6000 rpm / ≦ ±1 rpm
◆Operation guide：
◆Name：Parallel Plate RIE System
◆Model number：RIE-10NR
◆Manufacturer：samco (Introduction page of product)
◆Use：High precision etching of various silicon thin films such as Si, Poly-Si, SiO 2, SiN.
◆Spec：
◆Operation guide：Click here (old ver.)
◆Reference of etching rate：Click here (old ver.)
◆Name：ICP Etching System
◆Model number：RIE-200iP
◆Manufacturer：samco (Introduction page of product)
◆Use：High precision etching of silicon, various metal thin films, and compound semiconductors.
◆Spec：
◆Operation guide：
◆Name：Precision Diffusion Furnace
◆Model number：ARF3-13A-700W
◆Manufacturer：ASH (Introduction page of similar product)
◆Use：Wet oxidation, dry oxidation, boron diffusion, phosphorus diffusion, annealing.
◆Spec：
Temperature controller…Program temperature controller 【16 patterns 16 steps】
Temperature control system…PID control
Setting temperature range…0 ~ 1200 ℃
Temperature setting accuracy…0.1 ℃ increments
Additional function…Overheat prevention mechanism
Control element…Thyristor
Temperature sensor…R Thermocouple
◆Operation guide：Click here (new ver.)
◆Name：Precision Desktop Lamp Annealing
◆Model number：MILA-5050
◆Manufacturer：ADVANCE RIKO (Introduction page of similar product)
◆Use：Wet boron diffusion, phosphorus diffusion, oxidation.
◆Spec：
Setting temperature range…0 ~ 1200 ℃
Temperature setting accuracy…1~20℃/sec increments
sample size…50mm□ or less
Heating Atmosphere…Oxygen or Nitrogen(High purity gas purifier used)
◆Operation guide：Click here
◆Name：Solid Source ECR Plasma Deposition System
◆Model number：AFTEX EC-2300
◆Manufacturer：MES Afty (Current JSW Afty) (Introduction page of similar product)
◆Use：Thin film formation of Si oxide, nitride
◆Spec：
◆Operation guide：Click here (new ver.)
◆Name：Sample Producing Device for Electron Microscope
◆Model number：SC-701MkⅡADVANCE
◆Manufacturer：Sanyu Electron (Introduction page of product)
◆Use：Sputtering a metal target to form a thin film on the sample surface.
◆Spec：
Electrode…Parallel plate
Sputtering method…Magnetron
Sputtering direction…Sputtering down
Target size…φ49 mm, t0.5 mm
Applicable target…Au, Pt, Au-Pd, Pt-Pd, Ag, Pd, W, Ni, Mo, Cr, Ti, Al, Cu, Fe
Sample holder…Maximum φ50 mm
Arrival pressure…≦ 1 Pa
Process gas…argon (≦ 0.1 MPa)
Timer setting…0 ~ 15 min
Target / sample distance…20 mm, 30 mm, 40 mm
◆Operation guide：Click here (old ver.)
◆Name：Vacuum Vapor Deposition System (Al only)
◆Model number：VWR-400M/ERH
◆Manufacturer：ULVAC (Introduction page of product)
◆Use：Film creation by evaporating material from resistance heating evaporation source in vacuum. (Aluminum only)
◆Spec：
Arrival pressure…3.0×10^-4 Pa
Substrate Recommended Size / Maximum Size…□50 mm / □140 mm
Main pump…Oil diffusion pump (Water cooling) (400 L/sec)
Auxiliary pump…Oil rotary vacuum pump (200 L/sec)
◆Operation guide：Click here (old ver.)
◆Name：Vacuum Vapor Deposition System (general purpose)
◆Model number：VPC-260F
◆Manufacturer：ULVAC (Introduction page of product)
◆Use：Film creation by evaporating material from resistance heating evaporation source in vacuum. (General purpose)
◆Spec：
Arrival pressure…6.6×10^-4 Pa
Substrate Recommended Size / Maximum Size…□50 mm / □140 mm
Main pump…Oil diffusion pump (Water cooling) (200 L/sec)
Auxiliary pump…Oil rotary vacuum pump (100 L/sec)
◆Operation guide：Click here (new ver.)