Wafer Processing Device


◆Name:Electron Beam Lithography System
◆Model number:ELS-7700K
◆Manufacturer:ELIONIX (Introduction page of similar product)
◆Use:Drawing ultrafine pattern by electron beam.
It is mainly used for creating photomasks.
◆Spec:
(1)Electronic engineering body
 Electron gun…Thermal field emission type electron gun (ZrO / W)
 Minimum electron beam through…20 nm φ
 Minimum drawing line width…≦ 7 nm
 Maximum acceleration voltage…80 kV
(2)Sample chamber
 Movement range…X, Y direction=155 mm、Z direction=5 mm
 Maximum sample size…φ150 mm or 150 mm square
 Minimum sample size…≦ 5 mm square
 Drawing positioning resolution…0.31 nm
 Field coupling accuracy…40 nm
 Overlay drawing accuracy…40 nm
◆Operation guide:Click here (old ver.)



◆Name:Mask Aligner
◆Model number:MJB4
◆Manufacturer:SUSS MicroTec (Introduction page of product)
◆Use:Exposing ultraviolet light to the contact sample and photomask.
A pattern can be transferred to an arbitrary position on the sample.
◆Spec:
Resolution pattern…0.8 μm L/S
Maximum exposure area…100 mm φ
Illuminance distribution…≦ 5 % (100 mm φ)
Substrate size…5×5~25×25 mm square
Substrate thickness…Up to 4 mm
Mask size…2.5 inch square / 3 inch square
Alignment Stage…
 XY axis movable range…±5 mm
 θ axis movable range…±5°
 XY axis mechanical resolution…0.1 μm
 θ axis mechanical resolution…4×10^-5°
 Shift amount of XY axis when Z axis rises…≦ 0.1 μm
◆Operation guide:Click here (old ver.)



◆Name:Spincoater
◆Model number:ACT-220DⅡ
◆Manufacturer:Active(Introduction page of product)
◆Use:Apply resist uniformly to sample using centrifugal force of high speed rotation.
◆Spec:
Substrate size…φ10 ~ φ100 (Max.φ4 inch, □70 mm)
Rotation range / Rotation speed accuracy…300 ~ 8000 rpm / ≦ ±3 rpm
◆Operation guide:



◆Name:Spincoater
◆Model number:ACT-300AⅡ
◆Manufacturer:Active(Introduction page of product)
◆Use:Apply resist uniformly to sample using centrifugal force of high speed rotation.
◆Spec:
Substrate size…φ10 ~ φ150 (Max.φ6 inch, □110 mm)
Rotation range / Rotation speed accuracy…10 ~ 6000 rpm / ≦ ±1 rpm
◆Operation guide:



◆Name:Parallel Plate RIE System
◆Model number:RIE-10NR
◆Manufacturer:samco (Introduction page of product)
◆Use:High precision etching of various silicon thin films such as Si, Poly-Si, SiO 2, SiN.
◆Spec:
◆Operation guide:Click here (old ver.)
◆Reference of etching rate:Click here (old ver.)



◆Name:ICP Etching System
◆Model number:RIE-200iP
◆Manufacturer:samco (Introduction page of product)
◆Use:High precision etching of silicon, various metal thin films, and compound semiconductors.
◆Spec:
◆Operation guide:



◆Name:Precision Diffusion Furnace
◆Model number:ARF3-13A-700W
◆Manufacturer:ASH (Introduction page of similar product)
◆Use:Wet oxidation, dry oxidation, boron diffusion, phosphorus diffusion, annealing.
◆Spec:
Temperature controller…Program temperature controller 【16 patterns 16 steps】
Temperature control system…PID control
Setting temperature range…0 ~ 1200 ℃
Temperature setting accuracy…0.1 ℃ increments
Additional function…Overheat prevention mechanism
Control element…Thyristor
Temperature sensor…R Thermocouple
◆Operation guide:Click here (new ver.)



◆Name:Precision Desktop Lamp Annealing
◆Model number:MILA-5050
◆Manufacturer:ADVANCE RIKO (Introduction page of similar product)
◆Use:Wet boron diffusion, phosphorus diffusion, oxidation.
◆Spec:

Setting temperature range…0 ~ 1200 ℃
Temperature setting accuracy…1~20℃/sec increments
sample size…50mm□ or less
Heating Atmosphere…Oxygen or Nitrogen(High purity gas purifier used)

◆Operation guide:Click here



◆Name:Solid Source ECR Plasma Deposition System
◆Model number:AFTEX EC-2300
◆Manufacturer:MES Afty (Current JSW Afty) (Introduction page of similar product)
◆Use:Thin film formation of Si oxide, nitride
◆Spec:
◆Operation guide:Click here (new ver.)



◆Name:Sample Producing Device for Electron Microscope
◆Model number:SC-701MkⅡADVANCE
◆Manufacturer:Sanyu Electron (Introduction page of product)
◆Use:Sputtering a metal target to form a thin film on the sample surface.
◆Spec:
Electrode…Parallel plate
Sputtering method…Magnetron
Sputtering direction…Sputtering down
Target size…φ49 mm, t0.5 mm
Applicable target…Au, Pt, Au-Pd, Pt-Pd, Ag, Pd, W, Ni, Mo, Cr, Ti, Al, Cu, Fe
Sample holder…Maximum φ50 mm
Arrival pressure…≦ 1 Pa
Process gas…argon (≦ 0.1 MPa)
Timer setting…0 ~ 15 min
Target / sample distance…20 mm, 30 mm, 40 mm
◆Operation guide:Click here (old ver.)



◆Name:Vacuum Vapor Deposition System (Al only)
◆Model number:VWR-400M/ERH
◆Manufacturer:ULVAC (Introduction page of product)
◆Use:Film creation by evaporating material from resistance heating evaporation source in vacuum. (Aluminum only)
◆Spec:
Arrival pressure…3.0×10^-4 Pa
Substrate Recommended Size / Maximum Size…□50 mm / □140 mm
Main pump…Oil diffusion pump (Water cooling) (400 L/sec)
Auxiliary pump…Oil rotary vacuum pump (200 L/sec)
◆Operation guide:Click here (old ver.)



◆Name:Vacuum Vapor Deposition System (general purpose)
◆Model number:VPC-260F
◆Manufacturer:ULVAC (Introduction page of product)
◆Use:Film creation by evaporating material from resistance heating evaporation source in vacuum. (General purpose)
◆Spec:
Arrival pressure…6.6×10^-4 Pa
Substrate Recommended Size / Maximum Size…□50 mm / □140 mm
Main pump…Oil diffusion pump (Water cooling) (200 L/sec)
Auxiliary pump…Oil rotary vacuum pump (100 L/sec)
◆Operation guide:Click here (old ver.)