international 2010 –

2017

Invited talk
Y.Ono
Charge pump in silicon-Physics and application of charge transfer-
The16th International conference on Global Rsearch and Education (Inter-Academia2017, September 25-28,Alexandru Ioan Cuza University, Iasi, Romania)
Abstract pp.5

M.Hori, T.Watanabe, Y.Ono
Real-rime Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis
The 15th  International Confernce on QiR (QiR2017, July 24-27, The Westin Resort Nusa Dua, Bali, Indonesia)
Abstract No.E3A-1

H.Firdaus, M.Hori, Y.Takahashi, A.Fujiwara, Y.Ono
Sensitive Detaection of Holes Generated by Impact Ionization in Silicon
2017 Silicon Nanoelectronics Workshop (SNW-2017, June 4-5, Rihga Royal Hotel Kyoto, Kyoto)
Abstract pp.29-30.

Invited talk
T.Tsuchiya
Single Defect Characterization at Si/SiO2 Interface

The 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
(May 21-25,2017,Seminarhotel Schloss Hernstein, Hernstein, Austria)
Abstract ECS Trans. vol. 79, no. 1, pp. 79-89, 2017.

Invited talk
Y.Ono
, H.Firdaus, M.Hori
Observation of Impact Ionization in Silicon at Low Temperature
Innovative Solutions For Single Atom Applications In Photonics And Nanoelectronics
(ⅣBilateral Italy-Japan Seminar, May 2-4, Lecco, Italy) Abstract pp.7.

Invited talk
M.Hori
and Y.Ono
Charge pumping EDMR towards ultimate charge/spin control at room temperature in silicon
Innovative Solutions For Single Atom Applications In Photonics And Nanoelectronics
(ⅣBilateral Italy-Japan Seminar, May 2-4, Lecco, Italy) Abstract pp.11

2016
Invited talk
M. Hori and Y.Ono
Charge pumping EDMR for MOS interface analysis
(The 18th Takayanagi Kenjiro Memorial Symposium, November 15-16, Shizuoka University, Hamamatsu)
Proceedings pp.15-17

Y.Ono, M.Hori and A.Fujiwara

Silicon Single Boron Transistor
The 3rd International Conference on Nano Electronics Research and Education
The 8th International Conference on Electrical, Electronics, Communications, Controls and Informatics System
(ICNERE /EECCIS- 2016), October 31-November 2, Malang, Indonesia) Abstract pp.64.

Y.Ono, M. Hori, G.P.Lansbergen and A. Fujiwara
Manipulation of Single Charges Using Dopant Atoms in Silicon-Interplay with Intervalley Phonon Emission
15th International Conference on Global Research and Education
(Inter-Academia 2016, September 26-28, Warsaw University of Technology, Warsaw,Poland)
Proceedings pp.137-141.

M.Hori and Y.Ono
EDMR on Recombination Process in Silicon MOSFETs at Room Temperature
15th International Conference on Global Research and Education
(Inter-Academia 2016, September 26-28, Warsaw University of Technology, Warsaw,Poland)
Proceedings pp.89-93.

T.Watanabe, M.Hori and Y.Ono
Time domain charge pumping on silicon-on-insulator MOS transistors
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
(AWAD-2016, July 4-6, Hakodate Kokusai Hotel, Hakodate) Workshop Digest pp.377-379.

M.Hori, R.Narimatsu and Y.Ono
Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature
2016 IEEE Silicon Nanoelectronics Workshop
(SNW-2016, June12-13,Hilton Hawaiian Village,Honolulu, USA), Abstract pp.142-143.

Invited talk
M.Hori and Y.Ono
Novel application of the charge pumping process for charge and spin control
EMN Meeting on Quantum
(EMN-2016,April8-11, Phuket,Thailand), Abstract pp31-32.

2015
M.Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa,
and Y. Takahashi:
Fabrication of triple-dot single-electron transistor and its turnstile operation
28th International Microprocesses and Nanotechnology Conference
(MNC-2015, November 10-13, Toyama, Japan), Abstract 12P-7-31.

T.Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono:
Cryogenic Charge Pumping using Silicon on Insulators
28th International Microprocesses and Nanotechnology Conference
(MNC-2015, November 10-13, Toyama, Japan), Abstract 13B-10-4.

Y.Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono:
Electrically detected magnetic resonance study on silicon PN junction
2015 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
(AWAD-2015, July 1-3, Jeju, Korea), Workshop Digest, pp.352 – 353.

Invited talk
Y.Ono M. Hori:
Charge pumping by point defects – Towards ultimate control of recombination in silicon –
Silicon nanoelectronics for advanced applications (June. 16, 2015, Kyoto, Japan)

M.Hori, M. Uematsu, A. Fujiwara, Y. Ono:
ESR measurements of As donor electrons in silicon
The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
(EM-NANO 2015, 16-19, June, 2015, Niigata, Japan), Abstract P2-75.

T.Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono:
Low Temperature Charge Pumping in SOI Gated PIN Diode
2015 Silicon Nanoelectronics Workshop (SNW-2015, June 14-15, Kyoto, Japan).
Workshop Abstract, pp. 29-30.

2014
K.Nishiguchi, Y. Ono, A. Fujiwara:
Counting statistics of single-electron thermal noise
2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS November 30-December 5, 2014
Hapuna Beach Prince Hotel, Kohala Coast, Hawaii, USA), Book of abstract, p.13.

T.Tsuchiya, Y. Ono:
Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers
and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method
2014 International Conference on Solid State Devices and Materials (SSDM-2014, September 9-11, 2014,Tsukuba),
Extended Abstracts, pp. 842-843 (J-2-5L).

M.Hori, T. Watanabe, T. Tsuchiya, Y. Ono:
Time-domain measurements of charge pimping current
2014 Silicon Nanoelectronics Workshop (SNW-2014, June 8-9, Honolulu, Hawaii, USA).Workshop Abstract, pp. 31- 32.

T.Watanabe, M. Hori, T. Tsuchiya, Y. Ono:
Evaluation of accuracy of time-domain charge pumping
2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2014, July 1-3, Kanazawa, Japan),
Workshop Digest, pp. 96-99.

Invited talk
Y.Ono, G. P. Lansbergen, M. Hori, A. Fujiwara:
Electron pump by a single atom-Towards ultimate control of electronic charges-
2014 International Workshop on Advanced Nanovision Science (Jan. 21-22, 2014,Hamamatsu, Japan)

2013
Invited talk
Y.Ono
:
Single dopant physics and electronics
Silicon nanoelectronics for advanced applications (April 29-30, 2013, Verona, Italy).

M.Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio:
ESR study on pure single crystalline sapphire
Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-Silicide July 27 – 29, 2013, Tsukuba), Abstract 28P-24.

M.Hori, H. Tanaka, A. Fujiwara, Y. Ono:
ESR study of arsenic in silicon in low ion-implantation-dose regime
The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013, 17-20, June, 2013,
Kanazawa, Japan), Abstract P1-47.

N.Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, and N. Mio:
Electron spin resonance measurement of sapphire for KAGRA mirrors”,
12th Asia Pacific Physics Conference (APPC12), Chiba, Japan, July 2013.

2011
T.Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati:
Quantum transport in deterministically implanted single-donors in Si FETs
2011 International Electron Devices Meeting (IEDM-2011, December 6-8, San Fransisco, USA), Technical Digest, pp. 698-700.

G.P. Lansbergen, Y. Ono, A. Fujiwara:
Charge transfer by multiple donors in a Si nanowire
2011 International Conference on Solid State Devices and Materials (SSDM-2011, September 28-30, 2011, Nagoya), Extended Abstracts, pp. 1276-1277.

Y.Niida, K. Takashina, Y. Ono, A. Fujiwara, and Y. Hirayama:
Subband energy manipulation by gate voltage in Si (100) hole system
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-19) and the15th International Conference on Modulated Semiconductor structures (MSS-15) (EP2DS-19/MSS-15, July 25-29, 2011, Tallahassee, Florida).

Invited talk
T.Shinada, M. Hori, Y. Ono, A. Komatsubara, K. Taira, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari:
Control of Dopant Distribution by Single-Ion Implantation and its Impact on Transconductance of FETs
2011 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  (AWAD-2011, June 29-July 1, Daejeon, Korea), Workshop abstract, pp.71-74.

Invited talk
Y.Ono, M. A. H. Khalafalla, J. Noborisaka, G. P. Lansbergen, and A. Fujiwara: Keynote Lecture
Dopants in silicon transistors; Transport and Photoemission
CMOS Emerging Technologies Workshop (June 15 – 17, 2011, Whistler, BC, Canada)

M.Hori
, Y. Ono, K. Taira, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari, and T. Shinada:
Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs
11th International Workshop on Junction Technology (IWJT2011, June 9-10, Kyoto).

M.Sinohara, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi:
Observation of new current peaks of Si single-electron transistor with a single-hole trap
2011 Silicon Nanoelectronics Workshop (SNW-2011, June 12-13, Kyoto). Workshop Abstract, pp. 59 – 60.

G.P. Lansbergen, Y. Ono, and A. Fujiwara:
Capture and emission kinetics of traps in MOSFETs,
2011 Silicon Nanoelectronics Workshop (SNW-2011, June 12-13, Kyoto).Workshop Abstract, pp. 17 – 18.

J.Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara:
Electroluminescence study of phosphorus ionization in silicon-on-insulator metal-oxide-semiconductor  field-effect transistors
International Symposium on Nanoscale Transport and Technology, (ISNTT-2011, Jan. 11-14, Atsugi),Program and Abstract, p. 134.

G.P. Lansbergen, Y. Ono, and A. Fujiwara:
Charge switching in wire MOSFETs studied by separation of capture and emission
International Symposium on Nanoscale Transport and Technology, (ISNTT-2011, Jan. 11-14, Atsugi), Program and Abstract, p. 135.

2010
T.Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari:
Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance
2010 International Electron Devices Meeting (IEDM-2010,December 6-8, San Fransisco, USA). Technical Digest, pp. 297-300.

M.Anwar, D. Moraru, M. Ligowski, T. Mizuno, R. Jablonski, Y. Ono, and M. Tabe:
KFM Observation of Single-Electron Filling in Dopant Arrays
2010 International Conference on Solid State Devices and Materials (SSDM-2010, September 22-24, 2010, Tokyo), Extended Abstracts, pp. 97-98.

J.Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara:
Strong Stark effect of electroluminescence in thin SOI MOSFETs
2010 International Conference on Solid State Devices and Materials (SSDM-2010, September 22-24, 2010, Tokyo), Extended Abstracts, pp. 796-797.

T.Goto, H. Inokawa, Y. Ono, A. Fujiwara, and K. Torimitsu:
Effect of Device Structure on Electrical Conduction of Terphenyl-based Molecule
2010 International Conference on Solid State Devices and Materials (SSDM-2010, September 22-24, 2010, Tokyo), Extended Abstracts, pp. 507-508.

Invited talk
T.Shinada , M. Hori, K. Taira, T. Tanii, Y. Ono, T. Endoh and I. Ohdomari:
Performance evaluation of transistors with discrete dopants by single-ion doping method
21th International conference on the application of accelerators in research and industry (CAARI2010, August 8-13, 2010, Fort Worth, TX, USA)

Y.Niida, K. Takashina, Y. Ono, A. Fujiwara, and Y. Hirayama:
Electron-mobility suppression under valley-polarized region in Si quantum well
30th International Conference on the Pysics of Semiconductors (ICPS 2010, July 25 – 30, 2010, Seoul, Korea), Program P1-097.

Y.Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ota:
Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon
Asia-Pacific Conference on Semiconducting Silicides and Related materials Science and Technology Towards    Sustainable Optoelectronics (APAC-Silicide July 24 – 26, 2010, Tsukuba).

M.Hori, T. Shinada, K. Taira, T. Tanii, Y. Ono, T. Endoh and I. Ohdomari:
Enhancement of electron transport property in FET with asymmetric ordered dopant distribution
18th International Conference on Ion Implantation Technology (June 6 – 11, 2010, Kyoto).

Invited talk
A.Fujiwara, K. Nishiguchi, and Y. Ono:
Single electron transfer technology using Si nanowire MOSFETs
2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & ‘Beyond CMOS’ Era (March 1 – 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 – 20.

T.Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari:
Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method
SPIE Advanced Lithography – Alternative Lithographic Technologies II (February 21 – 25, 2010, San Jose, USA), Proc. SPIE Vol. 7637, 763711 (Apr. 2, 2010).

Invited talk
Y.Ono, M. Khalafalla, K. Nishiguchi, and A. Fujiwara: Keynote Lecture
Single dopant effects in silicon nano transistors
Single Dopant Control (March 29 – April 1, 2010, Leiden, Netherlands).

Invited talk
Y.Ono, M. Khalafalla, K. Nishiguchi, and A. Fujiwara:
Single dopant effects in silicon nano transistors
2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & ‘Beyond CMOS’ Era (March 1 – 2, 2010, Southampton, UK), Program and Abstracts, pp. 25 – 26.

K.Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisarwa, and K. Muraki:
In plane transport in a double layer crystalline silicon stracture with an SiO2 barrier
2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-Moore’ & Beyond CMOS’ Era (March 1 – 2, 2010, Southampton, UK), Program and Abstracts, p. 4.

Invited talk
M.Tabe, D. Moraru, M. Anwar, Y. Kawai, S. Miki, Y. Ono:
Si single-dopant FETs and observation of single-dopant potential by LT-KFM
5th International WorkShop on New Group IV Semiconductor Nanoelectronics (January 29 – 30, 2010, Sendai, Japan), Program & Abstracts, pp. 17 – 18.

Invited talk
Y.Takahashi, M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and J.-B. Choi:
Fabrication method for triple-coupled dots based on pattern-dependent oxidation
5th International WorkShop on New Group IV Semiconductor Nanoelectronics (January 29 – 30, 2010, Sendai, Japan), Abstract pp. 75-76, I-16.