2009
M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Fabrication of triple-dot single-electron transistor and its single-electron-transfer operation
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN-2009, November 29-December 4, 2009, Kaanapali, Maui, Hawaii, USA), P1-13, pp. 60-61.K.
Y. Ono, M. Khalafalla, S. Horiguchi, K. Nishiguchi, and A. Fujiwara:
Identification of single dopants in nanowire MOSFETs
2009 International Conference on Solid State Devices and Materials (SSDM-2009, October 7-9, 2009, Sendai),
Extended Abstracts, pp. 1134-1135.
K. Nishiguchi, Y. Ono, and A. Fujiwara:
Single-electron counting statistics of shot noise in nanowire Si MOSFETs
2009 International Conference on Solid State Devices and Materials (SSDM-2009, October 7-9, 2009, Sendai),
Extended Abstracts, pp. 1140-1141.
J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A. Fujiwara:
Tunnel spectroscopy of electron subbands in thin SOI MOSFET
2009 International Conference on Solid State Devices and Materials (SSDM-2009, October 7-9, 2009, Sendai), Extended Abstracts, pp. 262-263.
A. Fujiwara, K. Nishiguchi, and Y. Ono:
Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices
International Conference on Nanoscience & Technology, China 2009 (ChinaNANO-2009, September 1-3, 2009, Beijing, China). Abstract book pp. 50 – 51.
K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki:
Electron-hole transport in a 40 nm thick silicon slab
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18) and the 14th International Conference on Modulated Semiconductor structures (MSS-14) (EP2DS-18/MSS-14, July 19-24, Kobe, Japan), Program E4e.
S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Ito, and A. Fujiwara:
Single-electron activation over an oscillating barrier in silicon nanowire MOSFETs
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18) and the 14th International Conference on Modulated Semiconductor structures (MSS-14) (EP2DS-18/MSS-14, July 19-24, Kobe, Japan), Program Tu-eP91.
A. Fujiwara, K. Nishiguchi, and Y. Ono:
Single-electron devices based on silicon nanowire MOSFETs
“Trends in NanoTechnology” International Conference (TNT-2009, September 7-11, 2009, Barcelona, Spain) Workshop Abstract p. 39.
M. Jo, Y. Kato, M. Arita, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Logic switching characteristics of multiple-gate nanodot array device,
2008 1st International Workshop on Si based nano-electronics and -photonics (SiNEP-09, September 20-23, 2009,Vigo, Spain)
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Double-dot single-electron transistor fabricated in silicon nanowire on SOI substrate,
International Workshop on Photons and Spins in Nanostructures (IWPSN, July 27-28, 2009, Hokkaido Univ., Sapporo)
Y. Takahashi, T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa, and J.-B. Choi:
Novel-functional single-electron devices using silicon nanodot array
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2009, June 24-26, Pusan, Korea), IEICE Technical report, pp. 145-148.
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Fabrication of coupled-dot single-electron transistor in silicon nanowire
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2009, June 24-26, Pusan, Korea), IEICE Technical report, pp. 189-192.
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Fabrication of Coupled-dot single-electron transistor in silicon nanowire
2009 Silicon Nanoelectronics Workshop (SNW-2009, June 13-14, Kyoto). Workshop Abstract, pp. 155- 156.
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara:
Detection and position analysis of single and coupled acceptors in silicon nano field-effect transistors
2009 Silicon Nanoelectronics Workshop (SNW-2009, June 13-14, Kyoto). Workshop Abstract, pp. 137- 138.
M. Kawachi, Y. Ono, A. Fujiwara, and S. Horiguchi:
Effect of δ-function-like boron charge sheet on p-channel ultra-thin SOI MOSFETs
2009 Silicon Nanoelectronics Workshop (SNW-2009, June 13-14, Kyoto). Workshop Abstract, pp. 89- 90.
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Double-dot single-electron transistor fabricated in silicon nanowire
6th International Conference on Silicon Epitaxy and Heterostructures, (ICSI-6, May 18-22, 2009, Los Angels, USA), Workshop Abstract, p54-55.
2008
Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, and H. Inokawa:
New functional single-electron devices using nanodot array and multiple input gates
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008, December 9– 13, Nagoya).
Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama, and K. Muraki:
Asymmetric mobility of electrons and holes with respect to quantum-well potential in a double gate SIMOX MOSFET, International Symposium on Nanoscale Transport and Technology, (ISNTT-2008, Jan. 20-23, Atsugi), Program and Abstract, p. 127.
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, and K. Muraki:
In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier
International Symposium on Nanoscale Transport and Technology, (ISNTT-2008, Jan. 20-23, Atsugi), Program and Abstract, p. 128.
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara:
Detection and position analysis of single and coupled acceptors in silicon nano field-effect transistors
International Symposium on Nanoscale Transport and Technology, (ISNTT-2008, Jan. 20-23, Atsugi), Program and Abstract, pp. 51 – 52.
A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi:
Single-electron devices and their circuit applications,
Tera-level nanodevices (TND) Technical Forum (TND 2008, October 6– 7, Korea).
Y. Ono, M. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, and H. Inokawa:
Single-dopant effect in Si MOSFETs
IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008, Oct. 20-22, Kyoto, Japan), Final program and Abstract, p. 247.
S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Ito, and A. Fujiwara:
Escape dynamics of electron in a single-electron ratchet using silicon nanowire MOSFETs
IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008, Oct. 20-22, Kyoto), Final program and Abstract, p. 98.
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, and T. Fujisawa:
In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier
IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008, Oct. 20-22, Kyoto), Final program and Abstract, p. 16.
Y. Ono:
Single boron detection in nano-scale SOI MOSFETs
The 2008 International Meeting for Future of Electron Devices, Kansai (IEEE IMFEDK-2008, May. 22-23, Osaka, Japan), Abstract pp. 35-36.
2007
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara:
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V, 2007, Nov. 12-14, Tokyo, Japan), Extended abstracts & program, pp. 9 – 10.
Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, and H. Inokawa:
New functional single-electron devices using nanodot array and multiple input gates
3rd International Workshop on New Group IV Semiconductor Nanoelectronics (November 8 – 9, 2007, Sendai, Japan)
H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh:
A simple test structure for extracting capacitances in nanometer-scale MOSFETs
The 6-th annual International Conference on Global Research and Education (Inter-Academia-2007, September 25 – 28, 2007, Hamamatsu).
A. Fujiwara, K. Nishiguchi, and Y. Ono:
Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), Extended Abstracts, pp. 1144 – 1145.
M. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara:
Identification of single and coupled acceptors in silicon nano field-effect transistors
2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), Extended Abstracts, pp. 210 – 211.
H. Inokawa, A. Fujiwara, K. Nishiguchi and Y. Ono:
Capacitive parameter extraction for nanometer-size field-effect transistors
2007 International Conference on Solid State Devices and Materials (SSDM-2007, September 18-21, Tsukuba), Extended Abstracts, pp. 874 – 875.
A. Fujiwara, K. Nishiguchi, and Y. Ono:
Single-electron ratchet using silicon nanowie MOSFET
International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17 + 13 MSS, 5-20 July, 2007, Genova Magazzini del Cotone, Italy), MSS13 Abstract Book, pp. 215 – 217
S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta:
Theoretical study on magnetic properties of manganese nanosilicide in silicon
17th International Vacuum Congress (IVC-17, joint with ICSS-13 and ICN+T2007, July 2 – 6, 2007, Stockholm, Sweden)
D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe:
Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays
2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto) Workshop Abstract, pp. 161- 162.
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, and Y. Takahashi:
Dopant-mediated charge transport in boron-doped nano MOSFETs
2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto) Workshop Abstract, pp. 159- 160.
S. Yabuuchi, Y. Ono, M. Nagase, H. Kageshima, A. Fujiwara, E. Ohta:
Magnetic properties of manganese nanosilicide in silicon
2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto) Workshop Abstract, pp. 177- 178.
T. Kaizawa, M. Arita, A. Fujiwara1, K. Yamazaki1, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi:
Single-electron device using Si nanodot array and multi-input gates
2007 Silicon Nanoelectronics Workshop (SNW-2007, June 10-11, Kyoto) Workshop Abstract, pp. 171- 172.
H. W. Liu, T. Fujisawa, Y. Ono, A. Fujiwara, H. Inokawa, K. Takashina, and Y. Hirayama:
Electron transport through single and double quantum dots in silicon MOS structures
2007 Frontiers in Nanoscale Science and Technology Workshop (FNST2007, March 29 – 31, 2007, University of Tokyo, Tokyo)
H. Inokawa , K. Nishiguchi, Y. Ono, A. Fujiwara, and Y. Takahashi:
Recent progress in integration of silicon single-electron devices.
The 4th International Workshop on Ubiquitous Knowledge Network Environment (March 5 – 7, 2007, Sapporo, Japan) Abstract, p. 15.
Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S. Horiguchi, H. Inokawa, and Y. Takahashi:
Hopping conduction in buried-channel SOI MOSFETs with shallow impurities
International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2007, February 20 – 23, 2007, Atsugi, Kanagawa). Program & Abstract p. 161.
2006
T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki1, Y. Ono, H. Inokawa, and Y. Takahashi:
Single-electron device using Si nanodot array and multi-input gates
8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006, Oct. 23-26, 2006, Shanghai, China), Technical program, D3-7.
H. Inokawa, K. Nishiguchi, A. Fujiwara, Y. Ono,Y. Takahashi, and H. Yamaguchi:
Metal-Oxide-Semiconductor-Based Single-Electronics
The 5-th annual International Conference on Global Research and Education (inter-Academia2006, September 25 – 28, 2006, Iasi, Romania), Abstract pp. 175 – 184.
D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, and M. Tabe:
Towards single-electron pump operation using one ac gate bias in doped Si nanowires
The 5-th annual International Conference on Global Research and Education (inter-Academia2006, September 5 – 28, 2006, Iasi, Romania), Abstract pp. 373 – 380
D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda and M. Tabe:
Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires 2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama) Extended Abstracts, pp. 820-821.
K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi:
Infrared detection with silicon nano transistors.
2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 10-11.
T. Goto, H. Inokawa, K. Sumitmo, M. Nagase, Y. Ono, and K. Torimitsu:
Effect of UV/ozone treatment on nanogap electrodes for molecular devices
2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 912-913.
K. Takashina, B. Gaillard, Y. Ono, and Y. Hirayama:
Low temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar Devices
2006 International Conference on Solid State Devices and Materials (SSDM-2006, September 13-15, Yokohama), Extended Abstracts, pp. 830-831.
S. Suzuki, K. Kanzaki, Y. Ono, H. Inokawa, A. Vijayaraghavan, and Y. Kobayashi:
Mechanism of metal-semiconductor transition in the electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation
2006 nanotube (Nanotube06, Nagano, July 24 -28 2006). Workshop abstract, G.007, p.405.
K. Takashina, Marc-Aur` ele Brun, T. Ota, D. Maude, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Hirayama:
Resistance Ridges Along Filling Factor = 4i in SiO2/Si/SiO2 Quantum Wells.
2006 International Conference on Physics of Semiconductors (ICPS-2006. Vienna, Austria, July 24 -28 2006). TuA1c.7, Workshop abstract, pp. 50-51.
W. C .Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu:
Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors
Asia-Pacific 2006 Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2006, July 3-5, Sendai). Workshop abstract, pp. 249-253.
Y. Ono, K. Nishiguchi, K. Takashina, H. Inokawa, S. Horiguchi, and Y. Takahashi:
Impurity conduction and its control in phosphorus-doped SOI MOSFET.
2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA).Workshop abstract, pp. 111-112.
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
Long-retention gain-cell DRAM using undoped SOI MOSFET.
2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA). Workshop abstract, pp. 101-102.
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect-transistor technology.
2006 Silicon Nanoelectronics Workshop (SNW-2006, June 11-12, Hawaii, USA). Workshop abstract, pp. 23-24.
H.W. Liu, T. Fujisawa, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Hirayama:
Resonant tunneling transport through silicon double quantum dot
International Conference Nanoscience and Technology (ICNT 2006, July 30-August 4, Basel, Switzerland), Abstract pp.5
Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
Single-electron transfer in silicon; Towards single-dopant electronics.
The 3rd International Workshop on Ubiquitous Knowledge Network Environment (February 27 – March 1, 2006, Sapporo, Japan) Abstract, p. 15
K.Takashina, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi and Y. Hirayama:
Control of valley-splitting in silicon-on-insulator MOSFET’s.
2006 Frontiers in Nanoscale Science and Technology (FNST, January 26-28, San Francisco, USA)
2005
Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
Single-electron transfer in silicon.
2005 International Workshop on the Physics semiconductor devices (IWPSD, December 13-17, 2005, New Delhi, India)
H. Inokawa, Y. Ono, A. Fujiwara, K. Nishiguchi, and Y. Takahashi:
Single-Electron Devices and Circuits fabricated by MOS Processes,
2005 Tera-level nanodevices (TND) Technical Forum (TND 2005 October 6– 7, Korea).
Y. Ono:
Single-electron manipulation in silicon; Towards single-dopant electronics.
7th International Conference on New Phenomena in Mesoscopic Structures and 5th International Conference on Surfaces and Interfaces of Mesoscopic Devices (NPMS-7/SIMD-5, November 27 – December 2, 2005, Maui, USA) Abstract, p. 29.
Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
Single-electron manipulation; Interplay with crystalline imperfection.
2nd International Symposium on Point Defect and Nonstoichiometry (ISPN-2, October 4-6, 2005, Kaoshiung, Taiwan) Session Th-A2-1
Final program and Abstract book, p. 20.
N. Clement, H. Inokawa, and Y. Ono:
Studies on MOSFET low-frequency noise for electrometer applications,
2005 International Conference on Solid State Devices and Materials (SSDM-2005, September 12-15, Kobe), Extended abstract, pp. 176-177.
K. Kanzaki, S. Suzuki, Y. Kobayashi, Y. Ono, and H.Inokawa:
Control of electrical properties of single-walled carbon nanotubes by low-energy electron irradiation
2005 International Conference on Solid State Devices and Materials (SSDM-2005, September 12-15, Kobe), Extended abstract, pp. 772-773.
K.Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
Control of valley and spatial subbands in double-gate MOSFETs –Electronic states in a silicon quantum well–
2005 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD-2005, June 28-30, Seoul, Korea), Workshop abstract, pp. 39-42.
K. Kanzaki, A. Vijayaraghavan, S. Suzuki, Y. Kobayashi, H. Inokawa, and Y. Ono:
Conductivity control of single-walled carbon nanotubes by electron beam exposure,
Sixth International Conference on the Science and Application of Nanotubes (NT05, June 26 – July 1, 2005, Gothenburg, Sweden) Session, Poster XIX.6, abstract p. 389.
K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, and Y. Hirayama:
Intersubband scattering in double-gate SOI MOSFETs
2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto). Workshop abstract, pp. 4-5.
K. Nishiguchi, O. Clauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi:
Back-gate effect on Coulomb blockade in SOI trench wires,
2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto). Workshop abstract, pp. 84-85.
M. Nagase, Y. Ishikawa, Y. Ono, and M. Tabe:
Imaging of nano-scale embedded dislocation network in Si bicrystal,
2005 Silicon Nanoelectronics Workshop (SNW-2005, June 12-13, Kyoto). Workshop abstract, pp. 108-109.
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa:
Silicon-based single-electron devices
Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4, May 23-26, 2005, Awaji Island, Hyogo)
Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa:
Silicon single-electron pump and turnstile; Interplay with crystalline imperfection.
2005 Material Research Society Spring Meeting (2005 MRS Spring meeting, March 28 – April 1, 2005, San Francisco, CA, USA) Session E6.7.
Y. Ishikawa, K. Yamauchi, R. Nuryadi, H. Ikeda, M. Tabe, Y. Ono and M. Nagase:
Conductivity enhancement in thin silicon-on-insulator layer embedding artificial dislocation network.
2005 Material Research Society Spring Meeting (2005 MRS Spring meeting, March 28 – April 1, 2005, San Francisco, CA, USA) Session E6.5.
N. M. Zimmerman, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi, and E. Hourdakis:
The physics of Coulomb blockade in tunable barrier Si wires.
International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005, January 30 – February 2, 2005, Atsugi, Kanagawa). Program&Abstract p. 21.
Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
Room- and low-temperature characteristics of phosphorus-doped SOI MOSFET
International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction (NNCI2005, January 30 – February 2, 2005, Atsugi, Kanagawa). Program&Abstract p. 19.Session MO-10, Program & Abstract p. 19.
2004
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi:
Room- temperature single-electron transfer and detection with silicon nanodevices.
IEEE International Electron Devices Meeting (IEDM-04, December 13 – 15, 2004, San Francisco, USA). Technical digest, pp. 199 – 202.
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa:
Single-electron device applications using their special functionarity
The sixth international conference on nano-molecular electronics (ICMNE-2004, December 15-17, 2004, Kobe, Japan).
Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa:
Silicon single-electron devices and their applications,
2004 The 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2004, October 18-21, 2004, Beijing, China).
Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokawa:
Application of silicon single-electron devices,
First annual meeting on the fusion of biotechnology, nanotechnology, and semiconductor technology (FBNS2004, October 7-8, 2004, Kyoto, Japan)
Y. Ono: Keynote Lecture
Single-electron transistor and its logic applications,
ITRS Emerging research logic devices workshop (ERD2004, September 24, 2004, Leuven, Belgium).
Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi:
Charge-state control of phosphorus donors in SOI MOSFET,
2004 International Conference on Solid State Devices and Materials (SSDM-2004, September 15-17, Tokyo). Extended abstract, pp. 132-133.
Y. Ishikawa, K. Yamauchi, H. Ikeda, Y. Ono, M. Nagase, M. Tabe:
Formation of nanometer-scale dislocation network sandwiched by silicon-on-insulator layers
2004 International Conference on Solid State Devices and Materials (SSDM-2004, September 15-17, Tokyo) Extended Abstracts, pp. 336-337.
N .M. Zimmerman, A. Fujiwara, S. Martin, Y. Ono, and Y. Takahashi:
Silicon-based tunable-barrier single-charge sources,
Conference on Precision Electromagnetic Measurements (CPEM 2004, June 27- July 2, London, UK). Proceedings pp. 448-449 (IEEE Catalog Number: 03EX741).
2003
A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi:
Single-electron turnstile using Si-wire charge-coupled devices,
2003 International Semiconductor Device Research Symposium (ISDRS 2003, December 10-12, Washington, USA) Symposium Proceedings pp. 485-486 (IEEE Catalog Number: 03EX741).
S-J. Kim, Y. Ono, Y. Takahashi and J.-B. Choi:
Fabrication of combined structure of silicon single-electron pump with an extra island and MOSFET charge detector,
2003 International Microprocesses and Nanotechnology Conference (MNC 2003, October 29-31, Tokyo). Abstract, pp. 26-27.
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi:
Automatic control of the oscillation phase of a single-electron transistor by a memory node with a small MOSFET, 61th Annual Device Research Conference (DRC 2003, June 23-25, Salt-lake City, USA). Abstract, pp. 135-136.
Y. Ono, K. Yamazaki, and Y. Takahashi:
Silicon single-electron turnstile,
61th Annual Device Research Conference (DRC 2003, June 23-25, Salt-lake City, USA).Abstract, pp. 137-138.
Y. Ono, N. M. Zimmermann, and Y. Takahashi:
Single-electron pump using Si dual-gate single-electron transistor,
2003 Silicon Nanoelectronics Workshop (SNW-2003, June 8-9, Kyoto). Workshop abstract, pp. 78-79.
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
Influence of oxidation temperature on Si single-electron transistor characteristics
47-th International Conference on Electron, Ion, and Photon Beam Technology and Noanofabrication (EIPBN-2003, June).
2002
H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, Y. Ono, A. Fujiwara, and S. Horiguchi:
Fabrication of size-controlled Si single-electron transistors by E-beam nanolithography,
46-th International Conference on Electron, Ion, and Photon Beam Technology and Noanofabrication (EIPBN-2002, June).
2001
Y. Ono and Y. Takahashi:
Observation of negative differential conductance and its impact on single-electron-transistor characteristics,
2001 International Conference on Solid State Devices and Materials (SSDM-2001, September 26-28, Tokyo).Extended abstract, pp. 550-551.
Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, and Y. Takahashi:
Single-electron and quantum SOI devices,
12th biannual Conference on Insulating Films on Semiconductors Conference (INFOS-2001, June 20-23, Udine, Italy).
Abstract, pp. 149-150.
Y. Ono and Y. Takahashi:
Single-electron pass-transistor logic and its application to a binary adder,
2001 Symposium on VLSI Circuits (VLSI-2001, June 14-16, Kyoto). Digest of Technical Papers, pp. 63-66.
Y. Ono, K. Yamazaki, and Y. Takahashi:
Arithmetic operations by single-electron transistors,
2001 Silicon Nanoelectronics Workshop (SNW-2001, June 10-11, Kyoto).Workshop Abstracts, pp. 34-35.
2000
Y. Ono, and Y. Takahashi:
Single-electron pass-transistor logic: Operation of its elemental circuit,
2000 International Electron Devices Meeting (IEDM-00, December 10-13, San Fransisco, USA). Technical Digest, pp. 297-300.
Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase:
Fabrication method for IC-oriented Si single-electron transistors,
2000 International Seminar on Physics and Technology of Compound Semiconductor Advanced Devices (RCIQE –2000, February 7-8, Sapporo).Collected abstract pp. 51-56.